Ms. Qiuyue Qi Profile

Qiuyue Qi

at Soochow Univ

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Proceedings Article | 24 November 2021 Paper

In-situ laser nano-holed patterning of GaAs surface by the wetting of InAs layer

Qiuyue Qi, Linyun Yang, Wei Zhang, Siyi Zhuang, Biao Geng, Xinning Yang, Lili Miao, Zhenwu Shi, Changsi Peng

Proceedings Volume 12060, 120601T (2021) https://doi.org/10.1117/12.2607039

KEYWORDS: Indium arsenide, Gallium arsenide, Optical lithography, Laser applications, Atomic force microscopy, Quantum dots, Statistical analysis, Image processing, Pulsed laser operation, Semiconductors

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Recently, it has been reported, through using an in-situ laser exposure, nano holed structures can be created on the GaAs surface that is pre-capped by a thin InAs wetting layer and such nano holes were further proven to well serve as the preferential nucleation sites of InAs quantum dots (QDs). In this paper, we presented a study of how to further modify the morphology of the nano holes. First homo-deposition of 500nm GaAs buffer layer on GaAs (100) substrate and after capping of 0.5ML InAs, the as-prepared surface was in-situ exposed by a laser shot with energy of 20mJ. Then four different samples (A-D) were prepared, respectively corresponding to directly finishing the growth for sample A, for sample B repeating one cycle of “0.3ML InAs wetting layer capping + in situ laser exposure” before finishing the whole growth, two cycles for sample C and three cycles for sample D. It is found the density of nano holes on sample A is merely 5.5×10⁸/cm² with relatively small size possessing an average depth and width at 0.9nm and 36.6nm. After one cycle of “0.3ML InAs wetting layer capping + in situ laser exposure”, the density of nano holes on sample B increases by nearly one order of magnitude to 4.33×10⁹/cm²and the average depth and width become 1.0nm and 44.6nm. Further after two and three cycles, the resulting density would rise to 8.53 × 10⁹/cm²(sample C) and 1.12 × 10¹⁰/cm² (sample D), correspondingly, the average depth/width are magnified to 1.1nm/54.2nm and 1.3nm/59.7nm. Hence, we have demonstrated an effective approach to modify the in-situ laser nano-holed patterning of GaAs surface which is supposed to have promising applications in controlled growth of QDs.

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