KEYWORDS: Nanostructures, Electron microscopy, Scattering, Diffraction limit, Diffraction, Optical microscopy, Near field optics, Near field, Multilayers, Modeling
Dimensional optical microscopy allows for the rapid inspection of devices at the cost of limited accuracy. Introducing a model-based approach that includes diffraction effects allows for increased accuracies. The model needs to be efficient and accurate to evaluate the measurements in an acceptable time frame.
We present an overview of the illumination model and different incidence-pupil sampling techniques. Furthermore, we will demonstrate strategies for efficiently calculating the near-field scattering response from structures using the finite element method.
Using these aspects, we demonstrate a significant increase in the accuracy of dimensional estimates for a range of structures.
In this contribution, we present a technique for the determination of optical aberrations, which is based on measurements of the point spread function and a Bayesian optimization of rigorous simulations. The measuring system is a UV-microscope in a reflected light configuration with a 200x magnification, unpolarized light, and an illumination and imaging NA of 0.44 and 0.55, respectively. The PSF is measured by imaging a small quadratic chrome dot (side length ≈ 180 nm) on a glass substrate. We investigate the impact of different adjustment states, different dot locations and different optical microscopes.
In many industrial sectors, dimensional microscopy enables non-destructive and rapid inspection of manufacturing processes. However, wave-optical effects and imaging errors of the optical system limit the accuracy. With modelbased approaches it is possible to measure the physical position of edges and corners with submicron uncertainty. This requires an accurate model for phase aberrations of the optical system. We present a method to model and quantify those phase aberrations by an efficient inverse measurement.
A model-based edge detection is always required when quantitatively evaluating the bidirectional measurements of micro- and nanostructures in optical microscopy. For example, the accurate determination of the width of a structure requires the knowledge of the location of the real physical edges in the measured profile. The interpretation of the measured edge profile cannot be performed intuitively due to distortion which is caused by diffraction and refraction. We advise a model-based edge detection algorithm which is based on rigorous simulations of the microscope’s imaging. The intensity level which corresponds to the position of the real physical edge is called the threshold and it is determined in the simulations. For these optical simulations we employ the JCMsuite, which is a software application of the finite-element-method (FEM). Since numerical and semi-analytical methods for the calculation of electromagnetics in optical systems rely to some degree on approximations, their results may vary even when the input parameters are identical. We apply a test suite of input parameters for the purpose of comparing numerical simulation tools regarding the resulting thresholds for measurements on line-shaped nanostructures in a periodic grating. The test suite maintains the illumination and imaging parameters of a transmitted light UV-microscope while the object parameters of a binary line grating are varied. There are 25 grating configurations with different line-to-space ratios, where the line width ranges from the resolution limit up to almost 10 µm. The illumination pupil is discretized in a cartesian grid with 113 grid points in total. We introduce different pupil samplings, after calculating the threshold values of the original test suite. We obtain a high agreement of the thresholds results and the related linewidth values when comparing with already performed results of two additional rigorous applications. Furthermore, we showcase the threshold variation for different samplings of the illumination pupil.
In light microscopy, optical aberrations always affect the performance of the employed microscope. They can emerge from imperfect optical components of the microscope, like lenses, or from misalignments of such optical components, which may even change over time. In our contribution, we retrieve the optical aberrations in form of Zernike polynomials from measurements of small point structures by applying the extended Nijboer-Zernike approach. Subsequently, we include the expression for these optical aberrations in rigorous simulations of the microscope’s imaging process. Finally, we will compare the simulations with measurements to demonstrate optical bidirectional measurements on aberrant imaging systems.
Optical microscopy is widely used for the characterization of micro- and nanostructures in the field of unidirectional and bidirectional dimensional metrology. Despite the general high recognition in the metrological community, the inherent difficulties which are bound to optical bidirectional measurements using commercial vision-based metrology tools are not sufficiently investigated, yet, and require additional insight, which we intend to provide here. We demonstrate the need for sophisticated analysis methods to find a threshold value which locates the correct physical edge position within the microscopical image. The common assumption for the threshold to be at 50% of the intensity level of the edge signal is in essentially any imaging configuration wrong and leads to large systematic measurements errors. For example, the correct threshold values for transmission light microscopy using high NA objectives on chrome on quartz photomasks, are within 15% and 35% of the intensity level in the simulated images. For other measurement configurations the threshold variation can be even much larger. Since the correct threshold values depend on the illumination and imaging parameters of the imaging system as well as on the geometrical and optical parameters of the measurement object, we showcase a selection of them and their respective influence on the determination of the threshold values. Rigorous simulations are the key feature for this analysis since they require all the relevant parameters to be included in the simulation of a microscopical image which enables the correct threshold determination and to extract the correct bidirectional quantities out of the optical images.
The paper describes recent improvements of Physikalisch-Technische Bundesanstalt's (PTB) reference measuring instrument for length graduations, the so-called nanometer comparator, intended to achieve a measurement uncertainty in the domain of 1 nm for a length up to 300 mm. The improvements are based on the design and realization of a new sample carriage, integrated into the existing structure and the optimization of coupling this new device to the vacuum interferometer, by which the length measuring range of approximately 540 mm with sub-nm resolution is given. First, measuring results of the enhanced nanometer comparator are presented and discussed, which show the improvements of the measuring capabilities and verify the step toward the sub-nm accuracy level.
Optical vision systems require both unidirectional and bidirectional measurements for the calibrations and the
verification of the tool performance to enable accurate measurements traceable to the SI unit Metre. However, for
bidirectional measurements up to now the national metrology institutes are unable to provide internationally recognized calibrations of suitable standards. Furthermore often users are not aware of the specific difficulties of these measurements. In this paper the current status and limitations of bidirectional optical measurements at the industrial level are summarised and compared to state-of-the-art optical linewidth measurements performed at PTB on measurement objects of semiconductor industry. It turns out, that for optical widths measurements at an uncertainty level below 1 μm
edge localisation schemes are required, which are based on tool and sample dependent threshold values, which usually
need to be determined by a rigorous simulation of the microscopic image. Furthermore the calibration samples and
structures must have a sufficient quality, e. g. high edge angle and low edge roughness and the structure materials and their material parameters have to be known. The experience obtained within the accreditation process of industrial labs for width calibrations shows that, in order to be able to achieve a desired measurement uncertainties of about 100 nm, the imaging system needs to have a monochromatic Koehler illumination, numerical aperture larger than 0.5, a magnification greater than 50x and the ability to control the deviation of the focus position to better than 100 nm.
The Nanometer Comparator is the PTB reference length measuring machine for high precision calibrations of line scales
and encoder systems. Up to now the Nanometer Comparator allows to measure the position of line structures in one
dimension only. For high precision characterisations of masks, scales and incremental encoders, the measurement of the
straightness of graduations is a requirement from emerging lithography techniques. Therefore the Nanometer
Comparator will be equipped with an additional short range measurement system in the Y-direction, realized as a single
path plane mirror interferometer and supposed to achieve sub-nm uncertainties.
To compensate the topography of the Y-mirror, the Traceable Multi Sensor (TMS) method will be implemented to
achieve a reference-free straightness measurement. Virtual experiments are used to estimate the lower accuracy limit and
to determine the sensitive parameters. The virtual experiments contain the influence of the positioning devices,
interferometer errors as well as non-perfect adjustment and fabrication of the machine geometry. The whole dynamic
measurement process of the Nanometer Comparator including its influence on the TMS analysis, e.g. non-equally spaced
measurement points, is simulated.
We will present the results of these virtual experiments as well as the most relevant error sources for straightness
measurement, incorporating the low uncertainties of the existing and planned measurement systems.
To minimize the measurement uncertainty of one dimensional length measurements on line scales, linear encoders and
interferometers the PTB in cooperation with the Dr. Johannes Heidenhain GmbH had built up a new length comparator.
The Nanometer Comparator [1,2] has already proven its performance during the measurements of incremental encoders
and line scales with an expanded measurement uncertainty of below 5 nm [3,4,5]. Due to the introduction of double and
multiple exposure in advanced lithography techniques the overlay and registration metrology requirements will
drastically increase so that reference metrology tools need to be developed further to be able to follow the resulting
decrease of the specifications. Therefore, the PTB further develops the new 1D vacuum comparator to add a
measurement possibility for straightness and to reach a measurement accuracy in the sub nanometer range [6]. One key
development will be the interferometric measurement of all six degrees of freedom of the measurement slide of the
comparator. A new multi axis heterodyne interferometer electronics and optical interferometer designs minimizing
nonlinearities by spatially separated beams are under development.
The so-called Nanometer Comparator is the PTB vacuum length comparator which has been developed for high precision
length metrology on measurement objects with micro- and nanostructured graduations, like e.g. line scales, incremental
encoders or photomasks. The Nanometer Comparator allows to achieve smallest measurement uncertainties in the
nm-range by use of vacuum laser interferometry for the displacement measurement. We will report on the achieved
measurement performance of this high precision vacuum length comparator and the already started developments to substantially
enhance its measurement capabilities by additional straightness measurement capabilities. The enhanced
Nanometer Comparator will provide traceability for photomask pattern placement measurements in industry, also facing
the challenges due to the increased requirements on registration metrology as set by the introduction of new lithography
techniques like double patterning methods.
Due to the discussed introduction of double patterning techniques the overlay and registration metrology requirements
in advanced lithography will drastically increase so that reference metrology tools need to be developed further to be
able to follow the resulting tightening of the specifications. Therefore, the PTB further develops the Nanometer
Comparator, a 1D vacuum comparator, which already has proven its performance during the measurements of
incremental encoders. The implementation of the angular control loops decreases the angle deviations of the
measurement carriages down to 0.15 μrad, which led to a reduction of the contribution of the Abbe errors to the
measurement uncertainty to insignificant levels. Changes in the illumination and alignment of its optical microscope
resulted in an improved defocus behaviour, which consecutively reduced the reproducibility (1 σ) of measurements of
high quality scales in the order of 1 nm. Therefore an expanded measurement uncertainty of below 5 nm has been
achieved.
Until today one dimensional length comparators or line scale interferometers are used to realize and disseminate the unit of length. The performance of the vacuum length comparator of the PTB, the Nanometer Comparator, was characterized by measuring photoelectric incremental encoders. In some respects the measurements were used to optimize the performance of the instrument, e.g. with respect to its noise characteristics. The non-linearity of its vacuum interferometer could be determined to show an amplitude of 0.2 nm. The reproducibility of the measurement of an incremental encoder system with 280 mm measuring range was 0.3 nm. Currently, the relative expanded measurement uncertainty for the calibration of incremental encoder systems is in the range of 2x10-8. These results show that incremental encoders are well suited to characterize one dimensional length measuring machines.
The PTB in cooperation with the Dr. Johannes Heidenhain GmbH built up a new length comparator with a measurement range of 610 mm for 1D length measurements on line scales, linear encoders and interferometers. The PTB nanometer comparator was retrofitted and now allows a stable operation of the interferometer. To investigate the actual measurement performance a few line scales and a linear encoder were measured and compared with results from other comparators. The results are discussed and recent developments at the nanometer comparator are described.
This contribution will report on the results of the international line scale comparison Nano3, which was carried out between 2000 and 2003. The comparison was initiated by the BIPM working group on nanometrology as one of five comparisons in the field of nanometrology. Two high quality line scales of Zerodur and quartz with 280 mm graduations were chosen as transfer standards. They were measured by 13 national metrology institutes from 4 different metrology regions. The measurement uncertainties which were evaluated by the participants over the 280 mm length showed a variation from about 300 nm down to 30 nm.
Due to increasing demands on the photolithography of integrated circuits and the progress of interferometric linear encoders, length measurement systems with a reproducibility under 3 nm are used in industry today, whereas the connection to the unit of length exhibits an uncertainty of about 25 nm. To resolve this problem a new one dimensional length comparator, the nanometer comparator, was developed in a cooperation between the Physikalisch-Technische Bundesanstalt (PTB), the Dr. Johannes Heidenhain GmbH and Werth Me#technik GmbH. The nanometer comparator will be able to perform one dimensional calibrations of photo masks, line-graduation scales, incremental linear encoders and laser interferometers in one axis up to a maximum length of 610 mm. To ensure the highest level of measurement performance, the interferometer is completely located in vacuum using metal bellows, whilst the calibration objects can be mounted under atmospheric conditions. The interferometer set-up compensates the dilatation and the bending of the granite base and minimizes the measurement circle of the comparator. This will minimize the influence of thermal and mechanical distortions. The interferometer design can be used with a heterodyne or a homodyne signal detection electronics. Due to their high power dissipation, the laser is arranged far apart from the comparator and light is fed to the interferometers by means of glass fibers. The light source is a frequency-doubled Nd:YAG laser frequency stabilized by an iodine absorption line. Different measuring systems for the structure localization can be attached to an universal sensor carrier on a solid bridge above the measuring carriage. Incremental reading heads and two photoelectric microscopes are now available for this purpose.
Atomic force microscopes (AFMs) generate three dimensional images with nanometer level resolution and, consequently, are used in the semiconductor industry as tools for sub-micrometer dimensional metrology. Measurements commonly performed with AFMs are feature spacing (pitch), feature height (or depth), feature width (critical dimension), and surface roughness. To perform accurate measurements, the scales of an AFM must be calibrated. We have designed and developed the calibrated AFM (C-AFM) to calibrate physical standards for other AFMs. The C- AFM has displacement metrology for all three axes traceable to the 633 nm wavelength of the Iodine-stabilized He-Ne laser. This is accomplished through the integration of a flexure x-y translation stage, heterodyne laser interferometers, and a z- axis piezoelectric actuator with an integrated capacitance sensor. This capacitance sensor is calibrated with a third interferometer. We have performed both pitch and height measurements for external customers. Recently, we performed pitch measurements on holographic gratings as part of an ongoing international comparison driven by BIPM (Bureau International des Poids et Measures). We have also completed a preliminary design of a prototype pitch/height standard and are evaluating preliminary test samples. Additionally, we are working toward the development of linewidth standards through the comparison of C-AFM width measurements with values obtained from other methods. Our step height and linewidth measurements are in good agreement with those obtained by other methods, and we are working to improve the lateral resolution and hence the uncertainty of our probe-based linewidth measurements by studying the use of nanotubes and other types of sharp tips as linewidth probes.
The measurement of bump heights and pit depth on compact discs (CD) with atomic force microscopes (AFMs) is quite different from the measurement of step heights on step height calibration standards. Both the bumps and the pits show much larger transition regimes and more structural irregularities. The irregularities disqualify the effective use of profile based algorithms, which minimize the influence of any remaining motion deviations of the scan apparatus, to determine the height. Therefore a histogram height algorithm has to be used. The results of the bump height and pit depth measurements varied about 20 nm over the different sample regions. The remaining approximately 30 nm difference between the average of the bump height and pit depth is believed to result from the sample preparation procedure. By itself, the large sample variation observed will result in rather large measurement uncertainties for the measurement of the average height and depth of these features, if the averaging does not include a large amount of data taken at many different sample positions.
AFMs are increasingly used in the semiconductor industry as tools for sub-micrometer dimensional metrology. The scale of an AFM must be calibrated in order to perform accurate measurements. We have designed and developed the calibrated AFM (C-AFM) at the NIST to calibrate standards. Specifically, our primary calibrations are expected to be of combined pitch/height, or 3D magnification standards for AFM. THe C-AFM has metrology traceable to the International System of Units meter for all three axes. This is accomplished through the integration of a flexure x-y translation stage, heterodyne laser interferometers, and a z-axis piezoelectric actuator with an integrated capacitance sensor. Our first pitch measurements for an outside customer were recently compete, in which we were able to report relative expanded uncertainties as low as 1 percent on sub- micrometer pitches. The uncertainty budget for these measurements includes the effect of sample non-uniformity, which is the dominant contribution for some of the reported uncertainties. Four samples were measured - two with grid patterns and two with grid recently made considerable improvements in our uncertainty budget for step height measurements. For example, we recently achieved 0.2 nm expanded uncertainty on a 20 nm step, and achieved 0.008 nm expanded uncertainty in the measurement of the approximately 0.3 nm single atom step on Si. We also participated in the recently competed first round of the NIST linewidth correlation project, in which linewidht measurements obtained from different methods are compared. In this paper, we will report on the current status of the C-AFM, and on our plans for further development.
Because atomic force microscopes (AFMs) are capable of generating three dimensional images with nanometer level resolution, these instruments are being increasingly used in many industries as tools for dimensional metrology at sub- micrometer length scales. To achieve high accuracy, the scales of an AFM must be calibrated. Presently available standards for this purpose are commonly calibrated using stylus instruments and optical techniques. We have developed the calibrated AFM (C-AFM) in order to calibrate pitch and height standards using an AFM. Our instrument has metrology traceable to the wavelength of light for all three axes. This is accomplished through the integration of a flexure x-y translation stage, heterodyne laser interferometers, and a digital-signal-processor based closed-loop feedback system to control the x-y scan motion. The z-axis translation is accomplished using a piezoelectric actuator with an integrated capacitance sensor, which is calibrated using a heterodyne laser interferometer. When fully developed, this instrument will be a calibration tool for pitch and height standards for scanning probe microscopes. We have recently completed a reevaluation of the titling motions of the C-AFM scanner. This has allowed a refinement in our estimate of the Abbe error contribution to our measurement uncertainty. Our most recent pitch measurements are consistent with this new estimate and thus support our refined uncertainty budget. We have recently completed measurements of pitch on several samples, including both grid type and linear scale patterns, for an industrial user. We are also working toward the development of linewidth standards through the comparison of C-AFM width measurements with values obtained from other methods, including an electrical resistance techniques. In this paper, we will describe the current status of the C-AFM, discuss the use of the instrument for measurements of pitch and width, and describe our plans for future measurements.
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