Dr. Richard M. Silver Profile

Dr. Richard M. Silver

Physicist / Div Leader at National Institute of Standards and Technology

SPIE Involvement:

Author | Editor

Publications (77)

Proceedings Article | 22 February 2021 Presentation

Atomic precision fabrication of quantum devices down to the single atom regime

Richard Silver, Xiqiao Wang, Fan Fei, Jon Wyrick, Ranjit Kashid, Pradeep Namboodiri

Proceedings Volume 11610, 1161018 (2021) https://doi.org/10.1117/12.2586982

KEYWORDS: Chemical species, Quantum dots, Transistors, Physics, Metrology, Systems modeling, Solid state physics, Silicon, Scanning probe lithography, Scanning electron microscopy

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Proceedings Article | 21 June 2019 Presentation + Paper

Supplementing rigorous electromagnetic modeling with atomistic simulations for optics-based metrology

Bryan Barnes, Hui Zhou, Richard Silver, Mark-Alexander Henn

Proceedings Volume 11057, 110570K (2019) https://doi.org/10.1117/12.2525115

KEYWORDS: Silicon, Dielectrics, Metrology, Reflectometry, Anisotropy, Reflectivity, Electrons, Electromagnetism, Data modeling

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The successful combination of electromagnetic scattering simulations and optical measurements allows for the quantification of deep-subwavelength features, including thicknesses via ellipsometry and parameterized geometries via scatterometry. Although feature size reduction has slowed in recent years, nanoelectronics still yields ever-smaller structures, thus optical measurement capabilities are ever-challenged. The critical problem is that the optical properties of materials often become thickness dependent at sub-5 nm, greatly complicating accurate fitting. These optical properties can be characterized empirically using ellipsometry and used with other prior information to reduce uncertainties via hybrid metrology, but atomistic modeling offers a unique perspective on the macroscopic optical response from features with dimensions only a few atoms in width. To illustrate the potential of such modeling, we have performed a series of density-functional theory (DFT) calculations for an ultrathin film, Si with hydrogen-terminated Si(111) surfaces. Kohn-Sham wavefunctions determined in DFT are instrumental in solving for the dielectric tensor of these configurations, as the in-plane and out-of-plane components can differ greatly with respect to incident wavelength and Si thickness. Techniques for DFT and dielectric tensor determination are reviewed, highlighting both their limitations and potential for improving optics-based metrology. The thickness- and wavelength-dependence of the resulting tensor components are parameterized using Tauc-Lorentz and Lorentz oscillators. Using an illustration from goniometric reflectometry, the quantitative effects upon dimensional metrology of employing the full thickness-dependent dielectric tensor are compared against simpler approximations of these optical properties. Reductions in parametric uncertainty in the thickness and optical constants are evaluated with a prior knowledge of the ultrathin film’s thickness with uncertainties.

Proceedings Article | 26 March 2019 Open Access

Silicon-based quantum computing: manufacturing and metrology challenges (Conference Presentation)

Richard Silver

Proceedings Volume 10959, 1095903 (2019) https://doi.org/10.1117/12.2517365

KEYWORDS: Quantum computing, Silicon, Manufacturing, Metrology, Quantum communications, Chemical species, Semiconductors, Quantum information, Transmission electron microscopy, Physics

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Over the last 20 years there has been a steady increase in fundamental physics research and the hardware development needed to realize a quantum computer. However, in the last 5 years we have seen a dramatic increase in the interest from industry, including a variety of major semiconductor and technology leaders such as IBM, Google and Intel. This is the result of both a better understanding of the variety of problems that can be addressed and the impact that will come with quantum computing along with the emergence of a couple of potentially scalable hardware solutions. In a recent interview with a leading manufacturer, an aggressive strategy was laid out to achieve an operational 1000-qubit quantum computer within 5 years that can solve a variety of problems not addressable by conventional computing and the 10-year prospect to achieve a 1 million qubit machine that would “profoundly change society”. The major technology leaders view quantum information (QI) as a technology that they must begin to develop and understand today. Augmenting existing technology with QI is desirable, but , there are a variety of technical challenges to making silicon-based QI systems with the needed quantum properties and coherence times. New challenges in atomic precision and individual atom or electron effects that fundamentally affect device performance bring on a variety of new manufacturing and metrology challenges. Measuring electron spin coherence, exchange energies, and qubit fidelity are entirely new measurements for the semiconductor industry. Even the resolution of TEM may be inadequate, as TEM of a nominally 80 nm thick slice of silicon which averages many atoms together in a measurement where only one or two atoms can deeply change device performance, coherence times, or introduce charge offsets. After developing some of the first cold atom and ion trap quantum information demonstrations at NIST, we are now investing significantly in developing the supporting metrology and modeling methods needed to help industry develop and commercialize this new technology. In this presentation we will provide an overview of hardware solutions for quantum computing, future metrology needs and challenges to enable manufacturable quantum computers. Although industry leaders are now investing in superconducting qubits and silicon-based qubits, the two leading technologies, this talk will primarily focus on the principles of solid state silicon QI operation, manufacturing metrology solutions, and measurements needed to develop and evaluate viable technological solutions.

Proceedings Article | 26 March 2019 Presentation + Paper

Applications of machine learning at the limits of form-dependent scattering for defect metrology

Mark-Alexander Henn, Hui Zhou, Richard Silver, Bryan Barnes

Proceedings Volume 10959, 109590Z (2019) https://doi.org/10.1117/12.2517285

KEYWORDS: Metrology, Defect detection, Machine learning, Data modeling, Scattering, Performance modeling, Convolutional neural networks, Inspection, Semiconducting wafers, Defect inspection

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Proceedings Article | 19 March 2018 Presentation

Extensibility of optics-based metrology for sub-5nm technology (Conference Presentation)

Bryan Barnes, Richard Silver, Scott Schmucker, Hui Zhou, Mark-Alexander Henn, Martin Sohn

Proceedings Volume 10585, 1058504 (2018) https://doi.org/10.1117/12.2301076

KEYWORDS: Metrology, Dielectrics, Chemical species, Optical testing, Measurement devices, Scatterometry, Thin films, Semiconductors, Electromagnetism, Scatter measurement

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The downscaling of features in the semiconductor industry has continuously placed pressure on optics-based measurement methods to yield new solutions for measuring ever-smaller devices. Such measurements are desirable as optics is unique in its combination of high throughput, sensitivity, and non-destructivity. Rigorous electromagnetic modeling has already extended the utility of optical methods such as scatterometry to the measurements of dimensions well-below the conventional diffraction limit. As tolerances decrease with feature size, greater emphasis has been placed upon reducing parametric uncertainties, which can be negatively affected by parametric correlations in the theory-to-experiment fitting process. Parametric uncertainty reductions can be realized though hybrid metrology, the proper statistical treatment of additional quantitative information. As device feature sizes are now pushing towards the sub-5 nm domain, optics-based metrology faces a daunting new challenge. Consider that a 1 nm3 volume of crystalline silicon has just 50 atoms. Although the precise number of atoms across a 5 nm-wide line depends upon the lattice orientation, at these length scales dimensions can be expressed as few as ten atoms in width. At these near-atomic scales, quantized or atomistic effects must be considered especially with respect to the existing framework of electromagnetic scattering simulations and modeling that undergirds quantitative optical measurements. This challenge affects both conventional CMOS devices and also the variety of prospective new structures, such as “gate all around” transistors, nanowire based devices, and tunnel field effect transistors. Accurate determination of the real and imaginary dielectric constants e_1 and e_2 prove to be key to the extensibility of Maxwell’s Equations to these low dimensional structures. Several potential solutions to aspects of this measurement challenge are found in the literature, ranging from empirical determinations assuming an effective media [1] to density functional theory calculations of the electronic properties and the bulk dielectric tensors [2]. We will build upon such solutions from the literature and discuss additional alternatives such as the hybridization of multiple measurements or techniques, shorter measurement wavelengths, and enhanced hardware platforms. Figure 1 (see attachment) shows preliminary work underway in this effort. A Tauc-Lorentz fitting of scatterometry parameters (Delta) and (Psi) yields the thickness-dependent e_1 and e_2 for our initial sample set. This work will address not just the implications for thin films (i.e. two-dimensional structures) but also outline the challenges for one-dimensional and zero-dimensional structures as well. Figure 1. (a) Schematic of an initial sample set for experimentally demonstrating changes in the dielectric constant as a function of layer thickness. Samples were prepared using atomic layer deposition. (b) Dielectric constants e_1, e_2 for the sample set as function of photon energy. Permittivity decreases as a function of decreasing HfO2 thickness. [1] P. Ebersbach, et al., “Monitoring of ion implantation in microelectronics production environment using multi-channel reflectometry,” Proc. SPIE 9778, 977812 (2016). [2] P. Pusching and C. Anbrosch-Draxl, “Atomistic Modeling of Optical Properties of Thin Films,” Adv. Eng. Mat. 8, 1151-1155 (2006).

Proceedings Article | 19 March 2018 Presentation

Optimizing defect detectability across multiple ultraviolet wavelengths (Conference Presentation)

Mark-Alexander Henn, Bryan Barnes, Hui Zhou, Richard Silver

Proceedings Volume 10585, 105850A (2018) https://doi.org/10.1117/12.2301188

KEYWORDS: Signal to noise ratio, Defect detection, Ultraviolet radiation, Ultraviolet detectors, Inspection, Finite-difference time-domain method, Interference (communication), Defect inspection, Line edge roughness, Semiconducting wafers

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Proceedings Article | 8 November 2017 Paper

Dimensional measurement sensitivity analysis for a MoSi photomask using DUV reflection scatterfield imaging microscopy

Martin Sohn, Dong Ryoung Lee, Bryan Barnes, Ronald Dixson, Richard Silver, Sang-Soo Choi

Proceedings Volume 10451, 1045112 (2017) https://doi.org/10.1117/12.2280782

KEYWORDS: Photomasks, Microscopy, Illumination engineering, Beam shaping, Microscopes, Optical metrology, Metrology, Light scattering, Polarization, Objectives

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Proceedings Article | 26 June 2017 Paper

Optimizing image-based patterned defect inspection through FDTD simulations at multiple ultraviolet wavelengths

Bryan Barnes, Hui Zhou, Mark-Alexander Henn, Martin Sohn, Richard Silver

Proceedings Volume 10330, 103300W (2017) https://doi.org/10.1117/12.2271149

KEYWORDS: Finite-difference time-domain method, Signal to noise ratio, Defect detection, Optical lithography, Semiconductors, Deep ultraviolet, Light scattering, Scattering, Defect inspection, Semiconducting wafers, Polarization, Ultraviolet radiation, Metrology, Inspection

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Proceedings Article | 30 March 2017 Presentation + Paper

Assessing the wavelength extensibility of optical patterned defect inspection

Bryan Barnes, Hui Zhou, Mark-Alexander Henn, Martin Sohn, Richard Silver

Proceedings Volume 10145, 1014516 (2017) https://doi.org/10.1117/12.2262191

KEYWORDS: Polarization, Signal to noise ratio, Scattering, Defect inspection, Finite-difference time-domain method, Extreme ultraviolet, Defect detection, Optical spheres, Bridges, Silicon

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Proceedings Article | 25 March 2016 Paper

Enabling quantitative optical imaging for in-die-capable critical dimension targets

B. Barnes, M.-A. Henn, M. Sohn, H. Zhou, R. Silver

Proceedings Volume 9778, 97780Y (2016) https://doi.org/10.1117/12.2221920

KEYWORDS: Metrology, Polarization, Scatterometry, Scattering, Critical dimension metrology, Microscopy, 3D modeling, Data modeling, Model-based design, Semiconductors

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SPIE Journal Paper | 12 November 2015 Open Access

Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression

Mark-Alexander Henn, Richard Silver, John Villarrubia, Nien Fan Zhang, Hui Zhou, Bryan Barnes, Bin Ming, András Vladár

JM3, Vol. 14, Issue 04, 044001, (November 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.4.044001

KEYWORDS: Scanning electron microscopy, Metrology, Error analysis, Data modeling, Standards development, 3D metrology, Monte Carlo methods, Indium arsenide, Electron microscopes, Calibration

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Proceedings Article | 9 September 2015 Paper

Quantitative tool characterization of 193nm scatterfield microscope

Martin Sohn, Bryan Barnes, Hui Zhou, Richard Silver

Proceedings Volume 9556, 955611 (2015) https://doi.org/10.1117/12.2188224

KEYWORDS: Microscopes, Light scattering, Scattering, Surface plasmons, Calibration, Objectives, Image acquisition, Diffraction gratings, Excimer lasers, Charge-coupled devices

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Proceedings Article | 21 June 2015 Paper

The effect of systematic errors on the hybridization of optical critical dimension measurements

Mark-Alexander Henn, Bryan Barnes, Nien Fan Zhang, Hui Zhou, Richard Silver

Proceedings Volume 9526, 95260V (2015) https://doi.org/10.1117/12.2189928

KEYWORDS: Polarization, Line width roughness, Line edge roughness, Metrology, Extreme ultraviolet, Scatterometry, Deep ultraviolet, Data modeling, Scanning electron microscopy, Edge roughness

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Proceedings Article | 19 March 2015 Paper

Optimizing hybrid metrology: rigorous implementation of Bayesian and combined regression

Mark-Alexander Henn, Richard Silver, John Villarrubia, Nien Fan Zhang, Hui Zhou, Bryan Barnes, Bin Ming, András Vladár

Proceedings Volume 9424, 94241J (2015) https://doi.org/10.1117/12.2175653

KEYWORDS: Scanning electron microscopy, Error analysis, Metrology, Data modeling, Standards development, 3D metrology, Indium arsenide, Calibration, Inverse problems, Monte Carlo methods

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SPIE Journal Paper | 11 February 2015 Open Access

Effects of wafer noise on the detection of 20-nm defects using optical volumetric inspection

Bryan Barnes, Francois Goasmat, Martin Sohn, Hui Zhou, András Vladár, Richard Silver

JM3, Vol. 14, Issue 01, 014001, (February 2015) https://doi.org/10.1117/12.10.1117/1.JMM.14.1.014001

KEYWORDS: Signal to noise ratio, Semiconducting wafers, Line edge roughness, Wafer-level optics, Defect detection, Scattering, Scanning electron microscopy, Line width roughness, Inspection

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Proceedings Article | 17 December 2014 Paper

193 nm scatterfield microscope illumination optics

Martin Sohn, Richard Silver

Proceedings Volume 9293, 92931D (2014) https://doi.org/10.1117/12.2074211

KEYWORDS: Microscopes, Objectives, Illumination engineering, Relays, Metrology, Combined lens-mirror systems, Lens design, Image resolution, Beam shaping, Optical design

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Proceedings Article | 14 April 2014 Paper

Optimizing hybrid metrology through a consistent multi-tool parameter set and uncertainty model

R. Silver, B. Barnes, N. Zhang, H. Zhou, A. Vladár, J. Villarrubia, J. Kline, D. Sunday, A. Vaid

Proceedings Volume 9050, 905004 (2014) https://doi.org/10.1117/12.2048225

KEYWORDS: Metrology, Scanning electron microscopy, 3D modeling, Error analysis, Atomic force microscopy, Data modeling, 3D metrology, Model-based design, Critical dimension metrology, Uncertainty analysis

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Proceedings Article | 2 April 2014 Paper

Optical volumetric inspection of sub-20nm patterned defects with wafer noise

Bryan Barnes, Francois Goasmat, Martin Sohn, Hui Zhou, András Vladár, Richard Silver, Abraham Arceo

Proceedings Volume 9050, 905016 (2014) https://doi.org/10.1117/12.2048231

KEYWORDS: Signal to noise ratio, Line edge roughness, Semiconducting wafers, Scanning electron microscopy, Line width roughness, Bridges, Wafer-level optics, Scattering, Polarization, Defect detection

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Proceedings Article | 23 September 2013 Paper

Quantitative microscope characterization for optical measurements with sub-nm parametric uncertainties

Bryan Barnes, Jing Qin, Hui Zhou, Richard Silver

Proceedings Volume 8819, 88190E (2013) https://doi.org/10.1117/12.2027259

KEYWORDS: Microscopes, Polarization, Photodiodes, Scattering, Reflectivity, Microscopy, Objectives, Spatial frequencies, Charge-coupled devices, Sensors

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SPIE Journal Paper | 4 June 2013

Distributed force probe bending model of critical dimension atomic force microscopy bias

Vladimir Ukraintsev, Ndubuisi Orji, Theodore Vorburger, Ronald Dixson, Joseph Fu, Richard Silver

JM3, Vol. 12, Issue 02, 023009, (June 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.023009

KEYWORDS: Atomic force microscopy, Data modeling, 3D modeling, Numerical analysis, Error analysis, Metrology, Statistical modeling, Carbon nanotubes, Solids, Standards development

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Proceedings Article | 10 April 2013 Paper

Enhancing 9 nm node dense patterned defect optical inspection using polarization, angle, and focus

Bryan Barnes, Francois Goasmat, Martin Sohn, Hui Zhou, Richard Silver, Abraham Arceo

Proceedings Volume 8681, 86810E (2013) https://doi.org/10.1117/12.2012250

KEYWORDS: Defect detection, Polarization, Bridges, 3D image processing, Dysprosium, Scanning electron microscopy, Semiconducting wafers, Microscopes, Scattering, Optical filters

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Proceedings Article | 11 October 2012 Paper

Multiple-order imaging for optical critical dimension metrology using microscope characterization

Jing Qin, Hui Zhou, Bryan Barnes, Francois Goasmat, Ronald Dixson, Richard Silver

Proceedings Volume 8466, 84660G (2012) https://doi.org/10.1117/12.946120

KEYWORDS: Polarization, Critical dimension metrology, Microscopes, Optical imaging, Illumination engineering, Light scattering, Optical metrology, Microscopy, 3D acquisition, Scattering

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Proceedings Article | 5 April 2012 Paper

Scatterfield microscopy of 22-nm node patterned defects using visible and DUV light

Bryan Barnes, Yeung-Joon Sohn, Francois Goasmat, Hui Zhou, Richard Silver, Abraham Arceo

Proceedings Volume 8324, 83240F (2012) https://doi.org/10.1117/12.917286

KEYWORDS: Bridges, Polarization, Defect detection, Semiconducting wafers, Scanning electron microscopy, Microscopy, Microscopes, Illumination engineering, Optical lithography, Image filtering

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Proceedings Article | 5 April 2012 Paper

Phase sensitive parametric optical metrology: exploring the limits of three-dimensional optical metrology

Richard Silver, Jing Qin, Bryan Barnes, Hui Zhou, Ronald Dixson, Francois Goasmat

Proceedings Volume 8324, 83240N (2012) https://doi.org/10.1117/12.916988

KEYWORDS: 3D metrology, Optical metrology, Polarization, Light scattering, Statistical analysis, 3D image processing, Data acquisition, Metrology, Atomic force microscopy, Silicon

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Proceedings Article | 3 April 2012 Paper

On CD-AFM bias related to probe bending

V. Ukraintsev, N. Orji, T. Vorburger, R. Dixson, J. Fu, R. Silver

Proceedings Volume 8324, 83240V (2012) https://doi.org/10.1117/12.916737

KEYWORDS: Data modeling, 3D modeling, Numerical analysis, Metrology, Atomic force microscopy, Statistical analysis, Standards development, Semiconductors, 3D metrology, Statistical modeling

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Proceedings Article | 23 May 2011 Paper

A Bayesian statistical model for hybrid metrology to improve measurement accuracy

R. Silver, N. Zhang, B. Barnes, J. Qin, H. Zhou, R. Dixson

Proceedings Volume 8083, 808307 (2011) https://doi.org/10.1117/12.889876

KEYWORDS: Atomic force microscopy, Metrology, Statistical analysis, Data modeling, Reflectivity, Optical testing, Model-based design, 3D modeling, Oxides, Scanning electron microscopy

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Proceedings Article | 20 April 2011 Paper

Optical illumination optimization for patterned defect inspection

Bryan Barnes, Richard Quinthanilha, Yeung-Joon Sohn, Hui Zhou, Richard Silver

Proceedings Volume 7971, 79710D (2011) https://doi.org/10.1117/12.882313

KEYWORDS: Polarization, Defect detection, Microscopy, Metrology, Microscopes, Illumination engineering, Indium arsenide, Finite element methods, Defect inspection, Critical dimension metrology

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Proceedings Article | 20 April 2011 Paper

Nested uncertainties and hybrid metrology to improve measurement accuracy

R. Silver, N. F. Zhang, B. Barnes, H. Zhou, J. Qin, R. Dixson

Proceedings Volume 7971, 797116 (2011) https://doi.org/10.1117/12.882411

KEYWORDS: Atomic force microscopy, Metrology, Reflectivity, Data modeling, 3D modeling, Optical testing, Model-based design, Statistical analysis, Oxides, Scatter measurement

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Proceedings Article | 10 June 2010 Paper

Topography measurements for correlations of standard cartridge cases

T. Vorburger, J. Song, W. Chu, T. Renegar, A. Zheng, J. Yen, R. Thompson, R. Silver, B. Bachrach, M. Ols

Proceedings Volume 7729, 77291D (2010) https://doi.org/10.1117/12.859918

KEYWORDS: Standards development, Objectives, Confocal microscopy, Firearms, Microscopes, Optical imaging, Image acquisition, Optical microscopes, Databases, Imaging systems

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Proceedings Article | 3 June 2010 Paper

Optimal compression and binarization of signature profiles for automated bullet identification systems

Wei Chu, John Song, Theodore Vorburger, Robert Thompson, Thomas Renegar, Richard Silver

Proceedings Volume 7729, 77291C (2010) https://doi.org/10.1117/12.859858

KEYWORDS: Edge detection, Image processing, System identification, Firearms, Binary data, Microscopes, Manufacturing, Forensic science, Image compression, Sensors

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Proceedings Article | 2 April 2010 Paper

Sub-50-nm measurements using a 193-nm angle-resolved scatterfield microscope

R. Quintanilha, Y. Sohn, B. Barnes, R. Silver

Proceedings Volume 7638, 76381E (2010) https://doi.org/10.1117/12.846383

KEYWORDS: Microscopes, Objectives, Metrology, Calibration, Microscopy, Combined lens-mirror systems, Charge-coupled devices, Optical testing, Scatter measurement, Beam splitters

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Proceedings Article | 2 April 2010 Paper

The limits and extensibility of optical patterned defect inspection

Richard Silver, Bryan Barnes, Yeungjoon Sohn, Richard Quintanilha, Hui Zhou, Chris Deeb, Mark Johnson, Milton Goodwin, Dilip Patel

Proceedings Volume 7638, 76380J (2010) https://doi.org/10.1117/12.850935

KEYWORDS: Polarization, Defect detection, Defect inspection, Finite-difference time-domain method, Neodymium, Metrology, Semiconducting wafers, Illumination engineering, 3D modeling, Wafer-level optics

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Proceedings Article | 30 September 2009 Paper

Photomask metrology using a 193nm scatterfield microscope

R. Quintanilha, B. Barnes, Y. Sohn, L. Howard, R. Silver, J. Potzick, M. Stocker

Proceedings Volume 7488, 74881L (2009) https://doi.org/10.1117/12.829693

KEYWORDS: Microscopes, Photomasks, Calibration, Metrology, Ultraviolet radiation, Charge-coupled devices, Standards development, Quartz, Wafer-level optics, Polarization

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Proceedings Article | 24 August 2009 Paper

193 nm angle-resolved scatterfield microscope for semiconductor metrology

Yeung Joon Sohn, Richard Quintanilha, Bryan Barnes, Richard Silver

Proceedings Volume 7405, 74050R (2009) https://doi.org/10.1117/12.830683

KEYWORDS: Microscopes, Metrology, Overlay metrology, Microscopy, Semiconductors, Diffraction gratings, Objectives, Geometrical optics, Excimer lasers, Critical dimension metrology

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Proceedings Article | 29 June 2009 Paper

Critical dimension measurements using a 193 nm scatterfield microscope

R. Quintanilha, Y. Sohn, B. Barnes, L. Howard, R. Silver

Proceedings Volume 7390, 73900S (2009) https://doi.org/10.1117/12.827679

KEYWORDS: Microscopes, Silicon, Oxides, Diffraction, Critical dimension metrology, Microscopy, Illumination engineering, Finite element methods, Charge-coupled devices, Polarization

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Proceedings Article | 17 June 2009 Paper

Angle-resolved optical metrology using multi-technique nested uncertainties

R. Silver, B. Barnes, H. Zhou, N. Zhang, R. Dixson

Proceedings Volume 7390, 73900P (2009) https://doi.org/10.1117/12.827676

KEYWORDS: Metrology, Atomic force microscopy, Optical testing, Microscopy, Uncertainty analysis, Reflectivity, Scanning electron microscopy, Optical metrology, Overlay metrology, Scatterometry

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Proceedings Article | 24 March 2009 Paper

Analysis of Kohler illumination for 193 nm scatterfield microscope

Yeung Joon Sohn, Richard Quintanilha, Lowell Howard, Richard Silver

Proceedings Volume 7272, 72723T (2009) https://doi.org/10.1117/12.816624

KEYWORDS: Diffusers, Microscopes, Metrology, Holography, Objectives, Charge-coupled devices, Beam splitters, Laser development, Optical metrology, Relays

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Proceedings Article | 23 March 2009 Paper

Through-focus scanning and scatterfield optical methods for advanced overlay target analysis

Ravikiran Attota, Michael Stocker, Richard Silver, Alan Heckert, Hui Zhou, Richard Kasica, Lei Chen, Ronald Dixson, George Orji, Bryan Barnes, Peter Lipscomb

Proceedings Volume 7272, 727214 (2009) https://doi.org/10.1117/12.817062

KEYWORDS: Overlay metrology, Silicon, Optical microscopes, Calibration, Scatterometry, Reflectivity, Microscopy, Polarization, Optical aberrations, Optical testing

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Proceedings Article | 23 March 2009 Paper

Developing an uncertainty analysis for optical scatterometry

Thomas Germer, Heather Patrick, Richard Silver, Benjamin Bunday

Proceedings Volume 7272, 72720T (2009) https://doi.org/10.1117/12.814835

KEYWORDS: Scatterometry, Scatter measurement, Optical properties, Photoresist materials, Uncertainty analysis, Spectroscopy, Silicon, Oxides, Error analysis, Data modeling

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Proceedings Article | 19 March 2009 Open Access

Improving optical measurement accuracy using multi-technique nested uncertainties

R. Silver, N. F. Zhang, B. Barnes, H. Zhou, A. Heckert, R. Dixson, T. Germer, B. Bunday

Proceedings Volume 7272, 727202 (2009) https://doi.org/10.1117/12.816569

KEYWORDS: Metrology, Critical dimension metrology, Atomic force microscopy, Scatterometry, Optical testing, Scanning electron microscopy, Uncertainty analysis, Reflectivity, Microscopy, Line edge roughness

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Proceedings Article | 16 April 2008 Paper

Optical through-focus technique that differentiates small changes in line width, line height, and sidewall angle for CD, overlay, and defect metrology applications

Ravikiran Attota, Richard Silver, Bryan Barnes

Proceedings Volume 6922, 69220E (2008) https://doi.org/10.1117/12.777205

KEYWORDS: Silicon, Metrology, Polarization, Scanning electron microscopy, Overlay metrology, Optics manufacturing, Optical microscopes, Microscopes, Image analysis, Photomasks

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Proceedings Article | 24 March 2008 Paper

Angle resolved optical metrology

R. Silver, B. Barnes, A. Heckert, R. Attota, R. Dixson, J. Jun

Proceedings Volume 6922, 69221M (2008) https://doi.org/10.1117/12.777131

KEYWORDS: Silicon, Atomic force microscopy, Polarization, Critical dimension metrology, Reflectivity, Data modeling, Scatterometry, Error analysis, Dielectric mirrors, Overlay metrology

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SPIE Journal Paper | 1 January 2008

Optical critical dimension measurement of silicon grating targets using back focal plane scatterfield microscopy

Heather Patrick, Ravikiran Attota, Bryan Barnes, Thomas Germer, Ronald Dixson, Michael Stocker, Richard Silver, Michael Bishop

JM3, Vol. 7, Issue 01, 013012, (January 2008) https://doi.org/10.1117/12.10.1117/1.2885275

KEYWORDS: Reflectivity, Diffraction, Silicon, Microscopy, Scanning electron microscopy, Optical testing, Objectives, Atomic force microscopy, Diffraction gratings, Microscopes

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Proceedings Article | 18 June 2007 Paper

Model-based analysis of the limits of optical metrology with experimental comparisons

R. Silver, R. Attota, E. Marx

Proceedings Volume 6617, 66170W (2007) https://doi.org/10.1117/12.726201

KEYWORDS: Silicon, Finite-difference time-domain method, Reflectivity, Data modeling, Polarization, Illumination engineering, Diffraction, Microscopy, Geometrical optics, Scatterometry

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Proceedings Article | 13 April 2007 Paper

Köhler illumination analysis for high-resolution optical metrology using 193 nm light

Yeungjoon Sohn, Richard Silver

Proceedings Volume 6518, 65184V (2007) https://doi.org/10.1117/12.714890

KEYWORDS: Charge-coupled devices, Wavefronts, Monochromatic aberrations, Optical metrology, Optical design, Objectives, Surface plasmons, Excimer lasers, Laser beam propagation, Metrology

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Proceedings Article | 5 April 2007 Paper

Zero-order imaging of device-sized overlay targets using scatterfield microscopy

Bryan Barnes, Lowell Howard, Jay Jun, Pete Lipscomb, Richard Silver

Proceedings Volume 6518, 65180F (2007) https://doi.org/10.1117/12.716457

KEYWORDS: Overlay metrology, Reflectivity, Silicon, Microscopes, Objectives, Microscopy, Polarization, Fiber optic illuminators, Dielectric polarization, Cameras

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Proceedings Article | 5 April 2007 Paper

Fundamental limits of optical critical dimension metrology: a simulation study

Richard Silver, Thomas Germer, Ravikiran Attota, Bryan Barnes, Benjamin Bunday, John Allgair, Egon Marx, Jay Jun

Proceedings Volume 6518, 65180U (2007) https://doi.org/10.1117/12.716604

KEYWORDS: Scatterometry, Reflectivity, Polarization, Finite-difference time-domain method, Data modeling, Diffraction, Oxides, Silicon, Critical dimension metrology, Amorphous silicon

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Proceedings Article | 5 September 2006 Paper

Optical illumination and critical dimension analysis using the through-focus focus metric method

Ravikiran Attota, Richard Silver, James Potzick

Proceedings Volume 6289, 62890Q (2006) https://doi.org/10.1117/12.681231

KEYWORDS: Critical dimension metrology, Silicon, Optical microscopes, Microscopes, Optical simulations, Overlay metrology, Metrology, Scanning electron microscopy, Cadmium, Image analysis

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Proceedings Article | 5 September 2006 Paper

Illumination optimization for optical semiconductor metrology

Bryan Barnes, Lowell Howard, Richard Silver

Proceedings Volume 6289, 62890P (2006) https://doi.org/10.1117/12.681064

KEYWORDS: Microscopes, Objectives, Overlay metrology, Fiber optic illuminators, Optical alignment, Metrology, Semiconductors, Optical components, Diffraction, Mirrors

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