Single-mode superluminescent diodes operating at 2 μm wavelength are reported. The structures are based on GaSb
material systems and were fabricated by molecular beam epitaxy. Several waveguide designs have been implemented. A
continuous-wave output power higher than 35 mW is demonstrated for a spectrum centered at around 1.92 μm. We
show that the maximum output power of the devices is strongly linked to spectrum width. Device having low output
power exhibit a wide spectrum with a full-width half-maximum (FWHM) as large as 209 nm, while devices with highest
output power exhibit a narrower spectrum with about 61 nm FWHM.
Here we present a device concept utilizing GaSb-based laterally-coupled DFB-lasers. Fabrication procedure to define the
ridge waveguide and the grating makes use of nanoimprint lithography. This technology addresses issues related to mass
fabrication and cost of the DFB-lasers. We demonstrate state-of-the-art devices on a range of wavelengths around 2 μm.
These lasers exhibit single-mode operation with a maximum side-mode suppression ratio of more than 55 dB and high
output power of ~25 mW.
We report the development of a nanoimprint lithography patterning method and inductively coupled plasma etching
recipe designed for GaSb-based semiconductor materials. The developed processes were used to fabricate edge-emitting
ridge-waveguide lasers and laterally-coupled distributed feedback lasers operating at 1945 nm. For ridge-waveguide
laser with 1 mm cavity length, a threshold current of 32 mA was measured. Side-mode suppression ratio in excess of 30
dB was measured for the distributed feedback lasers with 2 mW output power and the output wavelength was
temperature-tunable with a tuning coefficient of 0.16 nm /°C.
The conventional distributed feedback (DFB) edge-emitting lasers with buried gratings require two or more epitaxial
growth steps. To avoid the problematic overgrowth we have used laterally-corrugated ridge-waveguide surface gratings,
which also enable easy integration of the resulting laterally-coupled DFB (LC-DFB) lasers with other devices and are
applicable to different materials, including Al-containing ones. The paper presents the modeling and design
particularities of LC-DFB lasers, the fabrication process, involving a highly productive and cost-effective UVnanoimprint
lithography technique, and the characteristics obtained for the LC-DFB lasers fabricated from GaAs-, GaSband
InP-based epiwafers. The first batches of GaAs-based LC-DFB lasers, emitting at 894 nm, GaSb-based LC-DFB
lasers emitting at 1.946 μm and InP-based LC-DFB lasers, emitting at 1.55 μm had relatively low threshold currents, a
high side-mode-suppression-ratio and exhibited linewidths in the range of 1 MHz and below, showing that the LC-DFB
lasers are an effective low-cost alternative for the conventional buried-grating DFB lasers.
We present a gallium antimonide-based semiconductor saturable absorber mirror (SESAM) operating at 2 μm
wavelength region. GaSb-based material system is the preferred choice for fabricating surface-normal devices operating
beyond 2 μm because it enables the use of highly reflective semiconductor reflectors and quantum wells for wide
wavelength range. For the purpose of generating short laser pules, the SESAM was carefully designed to attain a large
modulation depth. The device was utilised successfully to passively Q-switch a 2 μm Tm3+-/Ho3+ -doped fiber laser,
demonstrating record-short Q-switch pulses of about 20 ns.
We review recent results concerning the development of GaSb-based heterostructures for semiconductor disk lasers. We
focus on fabrication and design details of gain and semiconductor saturable absorber mirrors used to demonstrate disk
lasers exhibiting high output power, broad tunability, and short pulse generation. We demonstrate a 2 μm gain structure
with 15 InGaSb quantum wells emitting more than 4 W of output power at 15°C. Almost 1W output power was
measured at an elevated temperature of 50°C. A tuning range of more than 150 nm was achieved by employing a gain
mirror comprising quantum wells with different widths to provide broadband gain. Ultra-short pulse generation based on
synchronous mode-locking and a preliminary demonstration of passively mode-locked semiconductor disk lasers based
on GaSb saturable absorber mirrors are also discussed.
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