We will discuss the magneto-optical effects in indium tin oxide (ITO) thin films possessing the epsilon-near-zero (ENZ) wavelength in the telecommunication band. The Faraday rotation angle and the polar Kerr rotation angle of the ITO films are increased at around the corresponding ENZ and EN-one wavelengths, respectively, demonstrating enhanced MO effects in continuous ENZ materials. We also discuss some potential applications of ENZ-MO materials.
We fabricate directly modulated membrane distributed-reflector lasers on a Si platform using a micro-transfer printing method. Single-mode lasing with a low threshold current of 1.2 mA and 50-Gbaud-class direct modulation are demonstrated.
Valley photonic crystal (VPhC) is one of the photonic nanostructures that can host topologically protected edge states. The edge states enable efficient light guiding even under sharp corners. At a bearded interface consisting of two topologically distinct VPhCs, the edge state can be an in-gap slow light mode while keeping its robustness against sharp corners. The loss at sharp waveguide bends is largely suppressed for the topological slow light mode, compared to the non-topological slow light mode. Here, we discuss the design and the experimental demonstration of topological slow light waveguides in semiconductor VPhCs.
Raman optical activity (ROA) is a powerful tool for identifying the absolute conformational information and behavior of chiral molecules in aqueous solutions, but suffers from low sensitivity. Here we report our development of a silicon nanodisk array that tailors a chiral field to significantly increase the interaction between the excitation light and chiral molecules via exploiting a dark mode. Specifically, we used the array with pairs of chemical and biological enantiomers to show >100x enhanced chiral light-molecule interaction with negligible artifacts for ROA measurements. Our silicon nanodisk array opens a cost-effective way for conformational analysis of trace chiral molecules.
We discuss recent advances in light-matter coupling in quantum dots with a point-defect nanocavity in a woodpile three-dimensional
(3D) photonic crystal with the highest quality (Q) factor among those for 3D photonic crystal cavities. The
Q factor over 10,000 was so far achieved by optimizing the size of the defect cavity, in which the defect was not so large
that power loss into the in-plane direction limited the Q factor.
We demonstrate quantum dot (QD) based continuous-wave photonic crystal (PhC) nanocavity laser operates at room temperature with a very low effective threshold power of ~ 375 nW. The continuous-wave lasing was achieved at 1.3 μm with InAs/GaAs self-assembled QDs and high quality PhC nanocavity with a quality factor of 87,000. The light-in versus light-out curve shows no sharp threshold unlike conventional lasers with pronounced kinks around the thresholds.
This near-thresholdless behavior with smooth transition from thermal to coherent light region indicates that this nanocavity laser has a very high spontaneous emission coupling efficiency. The temporal coherence of such a high-β laser was studied by interference measurements. We also discuss the characteristics of background noise of QD based PhC nanocavity lasers compared with quantum well based PhC nanocavity lasers.
We fabricated and characterized photonic crystal (PhC) microcavities containing InAs quantum dots (QDs) grown on (100) GaAs substrates. QD emission coupled with a PhC cavity mode at a wavelength of 1.55 μm was observed at room temperature. The cavity quality factor Q and its ratio to the mode volume V, Q/V, reach up to 2700 and 3400 x (n/λ)3, respectively. To our knowledge, these are the highest values for microcavities containing QDs emitting at wavelengths around 1.5 μm. The large enhancement of emission intensity at the cavity resonances was clearly observed. The enhancement factor is ~10-100, which depends on cavity modes and pump power density.
The microdisk laser is a microcavity laser, which strongly confines the whispering gallery mode and realizes the ultralow threshold lasing and large scale integration. This paper presents two recent topics related with this laser. The first topic is the microdisk with InAs quantum-dot active layer. It is not only promising for ultimate low threshold operation but also has the potential of a high-speed single photon emitter because of the atom-like electron transition in quantum-dots and the large Purcell effect in the microcavity. In this study, we obtained the room temperature operation in this device, for the first time, by photopumping with a low effective threshold of less than 1 milliwatt. The second topic is the photonic molecule consisting of evanescent-coupled multiple microdisks based on GaInAsP materials. As well as the unique behavior of coupled modes in this structure, we also observed the bistable lasing by the nonuniform photopumping, which was considered to be arising from the saturable absorption. Due to its low threshold of 70 microwatts, this device is expected to be an optical memory and flip-flop device by photonic integration.
The tuning of the light propagation and localization properties in photonic crystal (PhC) slabs by using microactuators was demonstrated numerically and experimentally. A micromechanical actuator controls the position of the exterior structural element, which is located close to the PhC slab, and modulates the PhC properties through the change of the evanescent interaction of light confined in the PhC slab with the exterior element. When the exterior structural element approaches to a line-defect PhC waveguide, intensity and phase modulations occur. In the preliminary experiment using a line-defect PhC waveguide, we demonstrated the optical switching operation with an extinction ratio of ~10 dB at a wavelength of 1.55 μm. The localized state of light in a point-defect cavity can also be controlled. The tuning of the resonant wavelength over the spectral range of ~60nm at around the wavelength of 1.55 μm was numerically demonstrated by combining two PhC slabs. The approach discussed here can be widely employed for realizing functional and tunable PhC slab devices.
Some characteristics of photorefractive semiconductor multiple quantum well devices are discussed from the point of view of a material for the vibration measurement system using two-wave mixing. Device structure and device fabrication is explained, and some results of the measurements on the characteristics of the device are presented and discussed. Finally, the system of vibration measurements is described and some results are discussed. The smallest detectable amplitude of the vibration is 0.4 nm and the signal is linear up to 25 nm. Cut off frequency is 34 kHz at the incident intensity of 90mW/cm2.
Access to the requested content is limited to institutions that have purchased or subscribe to SPIE eBooks.
You are receiving this notice because your organization may not have SPIE eBooks access.*
*Shibboleth/Open Athens users─please
sign in
to access your institution's subscriptions.
To obtain this item, you may purchase the complete book in print or electronic format on
SPIE.org.
INSTITUTIONAL Select your institution to access the SPIE Digital Library.
PERSONAL Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.