Mr. Sebastian Weinhold Profile

Sebastian Weinhold

at Hochschule Mittweida

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Proceedings Article | 6 March 2014 Paper

Study of fast laser induced cutting of silicon materials

S. Weinhold, A. Gruner, R. Ebert, J. Schille, H. Exner

Proceedings Volume 8967, 89671J (2014) https://doi.org/10.1117/12.2039819

KEYWORDS: Laser cutting, Semiconducting wafers, Silicon, Semiconductor lasers, Crystals, Laser crystals, Scanning electron microscopy, Laser processing, Laser applications, Laser ablation

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We report on a fast machining process for cutting silicon wafers using laser radiation without melting or ablating and without additional pretreatment. For the laser induced cutting of silicon materials a defocused Gaussian laser beam has been guided over the wafer surface. In the course of this, the laser radiation caused a thermal induced area of tension without affecting the material in any other way. With the beginning of the tension cracking process in the laser induced area of tension emerged a crack, which could be guided by the laser radiation along any direction over the wafer surface. The achieved cutting speed was greater than 1 m/s. We present results for different material modifications and wafer thicknesses. The qualitative assessment is based on SEM images of the cutting edges. With this method it is possible to cut mono- and polycrystalline silicon wafers in a very fast and clean way, without having any waste products. Because the generated cracking edge is also very planar and has only a small roughness, with laser induced tension cracking high quality processing results are easily accessible.

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