In the half pitch (hp) 16nm generation, the shot count on a mask is expected to become bipolar. The multi-patterning
technology in lithography seems to maintain the shot count around 300G shots instead of increase in the number of
masks needed for one layer. However, as a result of mask multiplication, the better positional accuracy would be
required especially in Mask-to-Mask overlay. On the other hand, in complex OPC, the shot count on a mask is expected
to exceed 1T shots.
In addition, regardless of the shot count forecast, the resist sensitivity needs to be lower to reduce the shot noise effect so
as to get better LER. In other words, slow resist would appear on main stream, in near future. Hence, such trend would
result in longer write time than that of the previous generations. At the same time, most mask makers request masks to
be written within 24 hours. Thus, a faster mask writer with better writing accuracy than those of previous generations is
needed.
With this background, a new electron beam mask writing system, EBM- 9000, has been developed to satisfy such
requirements of the hp 16nm generation. The development of EBM-9000 has focused on improving throughput for
larger shot counts and improving the writing accuracy.
EBM-9000 equipped with new features such as new electron optics, high current density (800A/cm2) and high speed deflection control has been developed for the 11nm technology node(tn) (half pitch (hp) 16nm). Also in parallel of aggressive introduction of new technologies, EBM-9000 inherits the 50kV variable shaped electron beam / vector scan architecture, continuous stage motion and VSB-12 data format handling from the preceding EBM series to maintain high reliability accepted by many customers. This paper will report our technical challenges and results obtained through the development.
Among the most important UV lasers are the excimer and the nitrogen. A nitrogen gas laser is widely used in various
fields. We considered some ideas for a nitrogen laser built in more easily by using of triboluminescence. In this study,
we discussed development and discussion of convenient nitrogen laser. We considered utilization of triboluminescence
for control of discharge and the system of electric generator using triboluminescence in the longitudinally excited
nitrogen laser.
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