Dr. Serdar Manakli Profile

Dr. Serdar Manakli

CEO at ASELTA Nanographics

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Author

Publications (24)

Proceedings Article | 21 March 2012 Paper

Combined dose and geometry correction (DMG) for low energy multi electron beam lithography (5kV): application to the 16nm node

Luc Martin, Serdar Manakli, Sebastien Bayle, Jérôme Belledent, Sebastien Soulan, Pablo Wiedemann, Abdi Farah, Patrick Schiavone

Proceedings Volume 8323, 83231W (2012) https://doi.org/10.1117/12.916064

KEYWORDS: Metals, Electron beam lithography, Logic, Electroluminescence, Lithography, Optical lithography, Semiconducting wafers, Maskless lithography, Data modeling, Modulation

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Lithography faces today many challenges to meet the ITRS road-map. 193nm is still today the only existing industrial option to address high volume production for the 22nm node. Nevertheless to achieve such a resolution, double exposure is mandatory for critical level patterning. EUV lithography is still challenged by the availability of high power source and mask defectivity and suffers from a high cost of ownership perspective. Its introduction is now not foreseen before 2015. Parallel to these mask-based technologies, maskless lithography regularly makes significant progress in terms of potential and maturity. The massively parallel e-beam solution appears as a real candidate for high volume manufacturing. Several industrial projects are under development, one in the US, with the KLA REBL project and two in Europe driven by IMS Nanofabrication (Austria) and MAPPER (The Netherlands). Among the developments to be performed to secure the takeoff of the multi-beam technology, the availability of a rapid and robust data treatment solution will be one of the major challenges. Within this data preparation flow, advanced proximity effect corrections must be implemented to address the 16nm node and below. This paper will detail this process and compare correction strategies in terms of robustness and accuracy. It will be based on results obtained using a MAPPER tool within the IMAGINE program driven by CEA-LETI, in Grenoble, France. All proximity effects corrections and the dithering step were performed using the software platform Inscale® from Aselta Nanographics. One important advantage of Inscale® is the ability to combine both model based dose and geometry adjustment to accurately pattern critical features. The paper will focus on the advantage of combining those two corrections at the 16nm node instead of using only geometry corrections. Thanks to the simulation capability of Inscale®, pattern fidelity and correction robustness will be evaluated and compared between the correction strategies. This work will be lead on the most critical layers of the 16nm integrate circuits layouts which are contact and metal 1. Finally the aim of this paper is to demonstrate that a complete data preparation flow including advanced proximity effects corrections, simulation and verification capabilities is available for the maskless lithography at the 16nm node and below, through the direct write version of Inscale®. This data preparation platform is already in use in several laboratories for direct write processes.

Proceedings Article | 14 October 2011 Paper

Efficient large volume data preparation for electron beam lithography for sub-45nm node

Kang-Hoon Choi, Manuela Gutsch, Martin Freitag, Christoph Hohle, Luc Martin, Sebastien Bayle, Serdar Manakli, Patrick Schiavone

Proceedings Volume 8166, 816621 (2011) https://doi.org/10.1117/12.897586

KEYWORDS: Modulation, Electron beam lithography, Cadmium sulfide, Algorithm development, Point spread functions, Metals, Data corrections, Photomasks, Critical dimension metrology, Optics manufacturing

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Proceedings Article | 4 April 2011 Paper

Data preparation solution for e-beam multiple pass exposure: reaching sub-22nm nodes with a tool dedicated to 45 nm

Luc Martin, Serdar Manakli, Sébastien Bayle, Kang-Hoon Choi, Manuela Gutsch, Jonathan Pradelles, Jessy Bustos

Proceedings Volume 7970, 797019 (2011) https://doi.org/10.1117/12.879059

KEYWORDS: Electroluminescence, Electron beam lithography, Line edge roughness, Electron beam direct write lithography, Lithography, Modulation, Standards development, Semiconducting wafers, Optical lithography, Logic

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Electron Beam Direct Write (EBDW) lithography is used in the IC manufacturing industry to sustain optical lithography for prototyping applications and low volume manufacturing. It is also used in R&D to develop advanced technologies, ahead of mass production. As microelectronics is now moving towards the 32nm node and beyond, the specifications in terms of dimension control and roughness becomes tighter. In addition, the shrink of the size and pitch of features significantly reduces the process window of lithographic tools. In EBDW, the standard proximity effects corrections only based on dose modulation show difficulties to provide the required Energy Latitude for patterning structures designed below 45nm. A new approach is thus needed to improve the process window of EBDW lithography and push its resolution capabilities. In previous papers, a new writing strategy based on multiple pass exposure has been introduced and optimized to pattern critical dense lines. This new technique consists in adding small electron Resolution Improvement Features (eRIFs) on top of the nominal structures. Then this new design is exposed in two successive passes with optimized doses. Previous studies were led to evaluate this new writing technique and establish rules to optimize the design of the eRIF. Significant improvements have already been demonstrated on SRAM and Logic structures down to the 16nm node. These results were obtained with a tool dedicated to the 45nm node. The next step of this work is thus to automatically implement the eRIF to correct large-scale layouts. In this paper, a new data preparation flow is set up for EBDW lithography. It uses the eRIF solution as a full advanced correction method for critical structures. The specific correction rules established in our previous studies are implemented to improve the CD control and the patterning of corners and line ends. Moreover, the dose and shape of the eRIFs are automatically tuned to best fit the nominal design. This work is done with "INSCALE^®", the new data preparation software from ASELTA Nanographics. This data preparation flow is then applied on layouts down to the 22nm node. Comparisons with the standard dose modulation flow demonstrate that adding eRIFs significantly improves the process window and thus the resolution of e-beam tools. It also shows that the multiple pass exposure technique can be used as a specific correction method on large scale layouts.

Proceedings Article | 1 April 2010 Paper

Multiple pass exposure in e-beam lithography: application to the sub-22nm nodes

L. Martin, S. Manakli, B. Icard, J. Pradelles, R. Orobtchouk, A. Poncet, L. Pain

Proceedings Volume 7637, 76370E (2010) https://doi.org/10.1117/12.846907

KEYWORDS: Electroluminescence, Modulation, Line edge roughness, Electron beam lithography, Semiconducting wafers, Logic, Metals, Etching, Electron beam direct write lithography, Electron beams

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Proceedings Article | 23 September 2009 Paper

Development of multiple pass exposure in electron beam direct write lithography for sub-32nm nodes

L. Martin, S. Manakli, B. Icard, J. Pradelles, R. Orobtchouk, A. Poncet, L. Pain

Proceedings Volume 7488, 74881C (2009) https://doi.org/10.1117/12.829893

KEYWORDS: Electroluminescence, Electron beam direct write lithography, Standards development, Electron beam lithography, Optical lithography, Semiconducting wafers, Electron beams, Lithography, Line edge roughness, Optics manufacturing

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Proceedings Article | 23 September 2009 Paper

Predictive modeling for EBPC in EBDW

Rainer Zimmermann, Martin Schulz, Wolfgang Hoppe, Hans-Jürgen Stock, Wolfgang Demmerle, Alex Zepka, Artak Isoyan, Lars Bomholt, Serdar Manakli, Laurent Pain

Proceedings Volume 7488, 74883J (2009) https://doi.org/10.1117/12.833482

KEYWORDS: Data modeling, 3D modeling, Electron beam direct write lithography, Point spread functions, Critical dimension metrology, Model-based design, Geometrical optics, Cadmium, Error analysis, Virtual reality

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Proceedings Article | 27 May 2009 Paper

New writing strategy in electron beam direct write lithography to improve critical dense lines patterning for sub-45nm nodes

L. Martin, S. Manakli, B. Icard, J. Pradelles, R. Orobtchouk, A. Poncet, L. Pain

Proceedings Volume 7470, 74700R (2009) https://doi.org/10.1117/12.835189

KEYWORDS: Electroluminescence, Line edge roughness, Electron beam lithography, Electron beam direct write lithography, Modulation, Scattering, Optical lithography, Point spread functions, Standards development, Lithography

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Proceedings Article | 27 May 2009 Paper

High resolution cell projection

U. Weidenmueller, P. Hahmann, M. Lemke, B. Schnabel, L. Pain, S. Manakli

Proceedings Volume 7470, 74700P (2009) https://doi.org/10.1117/12.835187

KEYWORDS: Vestigial sideband modulation, Electron beam direct write lithography, Electron beam lithography, Beam shaping, Scanning electron microscopy, Standards development, Lithography, Prototyping, Semiconducting wafers, Electron beams

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The ever more demanding requirements in the semiconductor manufacturing sector together with the increasing mask making costs and cycle times call for new lithographic solutions. Electron beam lithography has shown its superior performance and flexibility in advanced patterning applications. It enables already today process and technology developments ahead of the ITRS roadmap, which addresses currently the 32nm and 22nm node or even below. Thus electron beam direct write (EBDW) can avoid the high costs and delay times related to the advanced masks required for critical layers. On the other side EBDW faces the concerns regarding its throughput, which bases upon the inherited sequential exposure method. A solution to improve the throughput performance offers the implementation of the cell projection method as already materialized in the Vistec SB3055 tool. In addition to the variable shape beam technology, which can project regular structures (rectangles, slants and triangles) only, cell projection is able to image complex structures. Thus, structures that would have required a multiple of regular shots are now projected in one single shot. Thanks to this approach not only the shot count is noticeably reduced, but also the overall throughput is increased. First experimental and simulation results show an improvement of a factor of about 3X. Nevertheless, the final throughput gain strongly depends on the pattern and data structure itself. Combining high resolution variable shape beam technology with the cell projection feature allows advanced R&D and small volume and prototyping applications to be performed with one system. The Vistec SB3055 features the high resolution capability of variable shape beam lithography and incorporates the advantages of the cell projection technology. Owing to this new option we are able to improve the throughput for standard design features while maintaining the required high accuracy of our exposure system. Beside this, the combination of cell projection and standard shape beam technology still offers a high degree of flexibility as the key advantage of EBDW. On the Vistec SB3055 system we have performed different resolution tests serving as comparison between cell projection and standard shape beam. In this paper we will present the resolution capability obtained with cell projection on test structures as well as the general accuracy achieved for real patterns.

Proceedings Article | 20 March 2009 Paper

Cell projection use in maskless lithography for 45nm and 32nm logic nodes

S. Manakli, H. Komami, M. Takizawa, T. Mitsuhashi, L. Pain

Proceedings Volume 7271, 72710K (2009) https://doi.org/10.1117/12.814730

KEYWORDS: Vestigial sideband modulation, Electron beam lithography, Beam shaping, Lithography, Electron beams, Logic, Semiconducting wafers, Optical lithography, Software development, Projection lithography

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Proceedings Article | 2 May 2008 Paper

New alignment marks for improved measurement maturity

U. Weidenmueller, H. Alves, B. Schnabel, B. Icard, L. Pain, J.-C. Le Denmat, S. Manakli, J. Pradelles

Proceedings Volume 6792, 679211 (2008) https://doi.org/10.1117/12.798788

KEYWORDS: Optical alignment, Semiconducting wafers, Optical lithography, Electron beams, Electron beam direct write lithography, Lithography, Signal to noise ratio, Overlay metrology, Signal detection, Wafer testing

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Proceedings Article | 28 March 2008 Paper

MAGIC: a European program to push the insertion of maskless lithography

L. Pain, B. Icard, S. Tedesco, B. Kampherbeek, G. Gross, C. Klein, H. Loeschner, E. Platzgummer, R. Morgan, S. Manakli, J. Kretz, C. Holhe, K.-H. Choi, F. Thrum, E. Kassel, W. Pilz, K. Keil, J. Butschke, M. Irmscher, F. Letzkus, P. Hudek, A. Paraskevopoulos, P. Ramm, J. Weber

Proceedings Volume 6921, 69211S (2008) https://doi.org/10.1117/12.772472

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Manufacturing, Electron beams, Electron beam lithography, Nanofabrication, Computed tomography, Prototyping, Maskless lithography

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Proceedings Article | 28 March 2008 Paper

High throughput maskless lithography: low voltage versus high voltage

S. W. H. Steenbrink, B. Kampherbeek, M. Wieland, J. Chen, S. Chang, M. Pas, J. Kretz, C. Hohle, D. van Steenwinckel, S. Manakli, J. Le-Denmat, L. Pain

Proceedings Volume 6921, 69211T (2008) https://doi.org/10.1117/12.771971

KEYWORDS: Semiconducting wafers, Scattering, Silicon, Critical dimension metrology, Electron beam lithography, Laser scattering, Lenses, Lithography, Modulation transfer functions, Maskless lithography

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SPIE Journal Paper | 1 July 2007

Complementary dose and geometrical solutions for electron beam direct write lithography proximity effects correction: application for sub-45-nm node product manufacturing

Serdar Manakli, C. Soonekindt, Laurent Pain, J. Le Denmat, Jerome Todeschini, B. Icard, B. Minghetti

JM3, Vol. 6, Issue 03, 033001, (July 2007) https://doi.org/10.1117/12.10.1117/1.2770472

KEYWORDS: Modulation, Critical dimension metrology, Electron beam direct write lithography, Point spread functions, Electron beam lithography, Cadmium sulfide, Electron beams, Optical lithography, Manufacturing, Backscatter

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Proceedings Article | 3 May 2007 Paper

Electron beam lithography simulation based on a single convolution approach: application for sub-45nm nodes

J. Le denmat, S. Manakli, B. Icard, C. Soonekindt, B. Minghetti, O. Le borgne, L. Pain

Proceedings Volume 6533, 653319 (2007) https://doi.org/10.1117/12.736519

KEYWORDS: Monte Carlo methods, Point spread functions, Electron beam direct write lithography, Optical simulations, Electron beam lithography, Electron beams, Convolution, Scattering, Photoresist processing, Laser scattering

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Proceedings Article | 12 May 2005 Paper

Understanding of the depth of focus evolution from an analysis of the iso-focal point

S. Manakli, Y. Trouiller, P. Schiavone

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.600970

KEYWORDS: Photomasks, Binary data, SRAF, Critical dimension metrology, Diffraction, Resolution enhancement technologies, Lithography, Semiconductors, Phase shifts, Integrated circuits

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Proceedings Article | 6 May 2005 Paper

Electron beam direct write lithography flexibility for ASIC manufacturing: an opportunity for cost reduction

L. Pain, M. Jurdit, J. Todeschini, S. Manakli, B. Icard, B. Minghetti, G. Bervin, A. Beverina, F. Leverd, M. Broekaart, P. Gouraud, V. De Jonghe, Ph. Brun, S. Denorme, F. Boeuf, V. Wang, D. Henry

Proceedings Volume 5751, (2005) https://doi.org/10.1117/12.601498

KEYWORDS: Photomasks, Electron beam direct write lithography, Manufacturing, Lithography, Optical proximity correction, Semiconducting wafers, Optics manufacturing, Optical lithography, Standards development, Photoresist processing

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Proceedings Article | 4 May 2005 Paper

Electron beam direct write process development for sub 45nm CMOS manufacturing

J. Todeschini, Laurent Pain, S. Manakli, B. Icard, V. DeJonghe, B. Minghetti, M. Jurdit, D. Henry, V. Wang

Proceedings Volume 5753, (2005) https://doi.org/10.1117/12.601616

KEYWORDS: Line width roughness, Electron beam direct write lithography, Semiconducting wafers, Electron beam lithography, Electron beams, Manufacturing, Etching, Photoresist processing, Coating, Semiconductors

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Proceedings Article | 20 May 2004 Paper

Manufacturing concerns for advanced CMOS circuit realization EBDW alternative solution for cost and cycle time reductions

Laurent Pain, M. Jurdit, Yves LaPlanche, J. Todeschini, Serdar Manakli, G. Bervin, Ramiro Palla, A. Beverina, R. Faure, X. Bossy, H. Leininger, S. Tourniol, M. Broekaart, F. Judong, K. Brosselin, P. Gouraud, Veronique De Jonghe, Daniel Henry, M. Woo, Peter Stolk, B. Tavel, F. Arnaud

Proceedings Volume 5374, (2004) https://doi.org/10.1117/12.537188

KEYWORDS: Electron beam direct write lithography, Manufacturing, Semiconducting wafers, Lithography, Optical alignment, Control systems, Electron beam lithography, Photomasks, Photoresist processing, Optics manufacturing

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SPIE Journal Paper | 1 April 2004

Complementary double-exposure technique (CODE): a way to print 80- and 65-nm gate levels using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre-Jerome Goirand

JM3, Vol. 3, Issue 02, (April 2004) https://doi.org/10.1117/12.10.1117/1.1683359

KEYWORDS: Photomasks, Binary data, Printing, Electroluminescence, Scanners, Resolution enhancement technologies, Visualization, Semiconducting wafers, Manufacturing, Optical proximity correction

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Proceedings Article | 10 July 2003 Paper

Using the CODE technique to print complex two-dimensional structures in a 90-nm ground rule process

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 5042, (2003) https://doi.org/10.1117/12.485529

KEYWORDS: Photomasks, Printing, Neodymium, Electroluminescence, Binary data, Scanners, Resolution enhancement technologies, Optical proximity correction, Visualization, Manufacturing

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Proceedings Article | 26 June 2003 Paper

Gate imaging for 0.09-μm logic technology: comparison of single exposure with assist bars and the CODE approach

Yorick Trouiller, Jerome Belledent, J. D. Chapon, V. Rousset, Yves Rody, Serdar Manakli, Pierre-Jerome Goirand

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485527

KEYWORDS: Printing, Photomasks, Lithographic illumination, Logic, Critical dimension metrology, Lithography, Optical proximity correction, Binary data, Electroluminescence, Scattering

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Proceedings Article | 27 December 2002 Paper

Complementary double-exposure technique (CODE) solutions to the two-dimensional structures of 90-nm node

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Yves Rody, Pierre Jerome Goirand

Proceedings Volume 4889, (2002) https://doi.org/10.1117/12.468203

KEYWORDS: Photomasks, Resolution enhancement technologies, Binary data, Optical proximity correction, Manufacturing, Scanners, Printing, Cadmium, Integrated circuits, Lithographic illumination

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Proceedings Article | 30 July 2002 Paper

Complementary double-exposure technique (CODE): a way to print 80-nm gate level using a double-exposure binary mask approach

Serdar Manakli, Yorick Trouiller, Olivier Toublan, Patrick Schiavone, Corinne Miramond, Yves Rody, Frank Sundermann, J. D. Chapon, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474597

KEYWORDS: Photomasks, Binary data, Electroluminescence, Resolution enhancement technologies, Neodymium, Visualization, Scanners, Critical dimension metrology, Manufacturing, Printing

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Proceedings Article | 30 July 2002 Paper

ArF imaging with off-axis illumination and subresolution assist bars: a compromise between mask constraints and lithographic process constraints

Yorick Trouiller, J. Serrand, Corinne Miramond, Yves Rody, Serdar Manakli, Pierre-Jerome Goirand

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474539

KEYWORDS: Scattering, Photomasks, Critical dimension metrology, Lithography, Electroluminescence, Lithographic illumination, Printing, Scanners, Photoresist processing, Lutetium

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Showing 5 of 24 publications

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