Prof. Shigefusa F. Chichibu Profile

Prof. Shigefusa F. Chichibu

Professor at Tohoku Univ

SPIE Involvement:

Author

Proceedings Article | 13 March 2024 Presentation

Operation-induced short-term degradation mechanisms of 275-nm-band AlGaN-based deep-ultraviolet light-emitting diodes on a sapphire substrate

Shigefusa Chichibu, Koji Okuno, Masaki Oya, Yoshiki Saito, Hisanori Ishiguro, Tetsuya Takeuchi, Kohei Shima

Proceedings Volume PC12906, PC129060C (2024) https://doi.org/10.1117/12.3000963

KEYWORDS: Sapphire, Light emitting diodes, Deep ultraviolet, Polonium, Internal quantum efficiency, Quantum wells, Quantum operations, Quantum efficiency, Photoluminescence, Nitrogen

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Proceedings Article | 9 March 2024 Presentation

Low-pressure acidic ammonothermal (LPAAT) growth of large diameter nearly bowing-free GaN crystals

Shigefusa Chichibu, Kouhei Kurimoto, Quanxi Bao, Yutaka Mikawa, Makoto Saito, Daisuke Tomida, Tohru Ishiguro, Kohei Shima

Proceedings Volume PC12886, PC1288601 (2024) https://doi.org/10.1117/12.3001028

KEYWORDS: Gallium nitride, Crystals, Semiconducting wafers, Physical coherence, Manufacturing, Gallium, Electronic components, Chip manufacturing

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Proceedings Article | 21 March 2023 Presentation

Impacts of vacancy clusters on the recombination dynamics in Mg-implanted GaN on GaN structures

Shigefusa Chichibu, Kohei Shima, Hiroko Iguchi, Tetsuo Narita, Keita Kataoka, Hideki Sakurai, Michal Bockowski, Jun Suda, Tetsu Kachi, Shinya Takashima, Ryo Tanaka, Katsunori Ueno, Masaharu Edo, Shoji Ishibashi, Akira Uedono

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2646375

KEYWORDS: Gallium nitride, Luminescence, Ultraviolet radiation, Magnesium, Gallium, Doping, Annealing

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Proceedings Article | 21 March 2023 Presentation

High-speed solar-blind optical wireless communications based on AlGaN deep-ultraviolet light-emitting diodes grown on AlN/sapphire templates with dense macro-steps

Kazunobu Kojima, Yuki Yoshida, Masaki Shiraiwa, Yoshinari Awaji, Atsushi Kanno, Naokatsu Yamamoto, Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Shigefusa Chichibu

Proceedings Volume PC12421, (2023) https://doi.org/10.1117/12.2649664

KEYWORDS: Deep ultraviolet, Light emitting diodes, Wireless communications, Signal to noise ratio, Sun, Signal attenuation, Lighting standards, Light sources and illumination, Interference (communication), Epitaxy

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Proceedings Article | 15 March 2023 Presentation + Paper

Annealing properties of vacancy-type defects in ion implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

Akira Uedono, Hideki Sakurai, Jun Uzuhashi, Tetsuo Narita, Kacper Sierakowski, Shoji Ishibashi, Shigefusa Chichibu, Michal Bockowski, Jun Suda, Tadakatsu Ohokubo, Nobuyuki Ikarashi, Kazuhiro Hono, Tetsu Kachi

Proceedings Volume 12421, 124210C (2023) https://doi.org/10.1117/12.2646233

KEYWORDS: Annealing, Gallium nitride, Magnesium, Gallium, Ions, Ion implantation, Silicon, Doppler effect, Solids, Chemical species

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Proceedings Article | 9 March 2022 Presentation

High-speed solar-blind optical wireless communication enabled by DUV LED

Yuki Yoshida, Kazunobu Kojima, Masaki Shiraiwa, Atsushi Kanno, Akira Hirano, Yosuke Nagasawa, Masamichi Ippommatsu, Naokatsu Yamamoto, Shigefusa Chichibu, Yoshinari Awaji

Proceedings Volume PC12022, PC120220K (2022) https://doi.org/10.1117/12.2608459

KEYWORDS: Light emitting diodes, Deep ultraviolet, Wireless communications, Visible radiation, Telecommunications, Infrared radiation

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Proceedings Article | 5 March 2021 Presentation

Behaviors of vacancy-type defects in Mg-implanted GaN during ultra-high-pressure annealing studied by using a monoenergetic positron beam

A. Uedono, H. Sakurai, T. Narita, K. Sierakowski, M. Bockowski, J. Suda, S. Ishibashi, S. Chichibu, T. Kachi

Proceedings Volume 11686, 116861P (2021) https://doi.org/10.1117/12.2575972

KEYWORDS: Gallium nitride, Annealing, Magnesium, Ion implantation, Doping, Spectroscopy, Ions, Nitrogen, Temperature metrology, Aluminum nitride

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Proceedings Article | 16 February 2020 Paper

Control of vacancy-type defects in Mg implanted GaN studied by positron annihilation spectroscopy

Akira Uedono, Marcel Dickmann, Werner Egger, Christoph Hugenschmidt, Shoji Ishibashi, Shigefusa Chichibu

Proceedings Volume 11280, 112800C (2020) https://doi.org/10.1117/12.2541518

KEYWORDS: Magnesium, Gallium nitride, Annealing, Ion implantation, Doppler effect, Ions, Spectroscopy, Semiconductors

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Proceedings Article | 16 February 2020 Paper

Origin and dynamic properties of major intrinsic nonradiative recombination centers in wide bandgap nitride semiconductors

Shigefusa Chichibu, Kohei Shima, Kazunobu Kojima, Shoji Ishibashi, Akira Uedono

Proceedings Volume 11280, 112800B (2020) https://doi.org/10.1117/12.2545409

KEYWORDS: Gallium nitride, Semiconductors, Aluminum nitride, Magnesium, Doppler effect, Luminescence, Light emitting diodes

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Proceedings Article | 14 March 2018 Presentation

Determination of absolute quantum efficiency of radiation in nitride semiconductors using an integrating sphere (Conference Presentation)

Kazunobu Kojima, Hirotaka Ikeda, Kenji Fujito, Shigefusa Chichibu

Proceedings Volume 10532, 105321R (2018) https://doi.org/10.1117/12.2285374

KEYWORDS: Gallium nitride, Crystals, Quantum efficiency, Internal quantum efficiency, Gallium, Semiconductors, Integrating spheres, Switching, Luminescence, Time resolved spectroscopy

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Proceedings Article | 4 March 2011 Paper

Point defects in GaN and related group-III nitrides studied by means of positron annihilation

Akira Uedono, Shoji Ishibashi, Shigefusa Chichibu, Katsuhiro Akimoto

Proceedings Volume 7939, 79390I (2011) https://doi.org/10.1117/12.871611

KEYWORDS: Gallium nitride, Annealing, Erbium, Doppler effect, Ions, Ion implantation, Doping, Semiconductors, Solids, Defect detection

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Proceedings Article | 15 February 2008 Paper

MgxZn1-xO epitaxial films grown on ZnO substrates by molecular beam epitaxy

H. Yuji, K. Nakahara, K. Tamura, S. Akasaka, A. Sasaki, T. Tanabe, H. Takasu, T. Onuma, S. Chichibu, A. Tsukazaki, A. Ohtomo, M. Kawasaki

Proceedings Volume 6895, 68950D (2008) https://doi.org/10.1117/12.774974

KEYWORDS: Zinc oxide, Zinc, Molecular beam epitaxy, Magnesium, Atomic force microscopy, Oxygen, Plasma, Excitons, Semiconductors, Ultraviolet radiation

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Proceedings Article | 14 February 2008 Paper

Four-wave mixing spectroscopy of ultraviolet excitons in strained GaN

T. Ishiguro, Y. Toda, S. Adachi, S. F. Chichibu

Proceedings Volume 6892, 689219 (2008) https://doi.org/10.1117/12.762839

KEYWORDS: Excitons, Picosecond phenomena, Silicon carbide, Gallium nitride, Four wave mixing, UV-Vis spectroscopy, Spectroscopy, Ultraviolet radiation, Polarization, Ultrafast phenomena

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Proceedings Article | 30 May 2003 Paper

Optical nonlinearities of excitons in ZnO single crystal

Kouji Hazu, Takayuki Sota, Katsuo Suzuki, Satoru Adachi, Shigefusa Chichibu

Proceedings Volume 4992, (2003) https://doi.org/10.1117/12.475710

KEYWORDS: Polaritons, Excitons, Polarization, Zinc oxide, Picosecond phenomena, Crystals, Nonlinear optics, Crystallography, Four wave mixing, Semiconductors

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Proceedings Article | 30 May 2003 Paper

Scattering processes and dynamics of exciton-biexciton system in GaN

Satoru Adachi, Kouji Hazu, Takayuki Sota, Shigefusa Chichibu, Takashi Mukai, Shunichi Muto, Katsuo Suzuki

Proceedings Volume 4992, (2003) https://doi.org/10.1117/12.475699

KEYWORDS: Polarization, Excitons, Gallium nitride, Picosecond phenomena, Signal processing, Point spread functions, Scattering, Signal generators, Brain-machine interfaces, Zinc oxide

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Proceedings Article | 12 November 1999 Paper

Comparison of optical properties in GaN and InGaN quantum well structures

Shigefusa Chichibu, Amane Shikanai, Takahiro Deguchi, Akiko Setoguchi, Rikuro Nakai, Kazumi Wada, Steven DenBaars, Takayuki Sota, Takashi Mukai, Shuji Nakamura

Proceedings Volume 3896, (1999) https://doi.org/10.1117/12.370352

KEYWORDS: Quantum wells, Indium gallium nitride, Excitons, Gallium nitride, Absorption, Electroluminescence, Light emitting diodes, Electronics, Luminescence, Absorbance

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