Optical sensors based on a plasmonic multilayer stack, such as metal-insulator-metal (MIM), have attracted considerable attention over the past decades owing to their high resolution and high performance compared to conventional surface plasmon resonance (CSPR) sensors for bulk sensing (BS) applications. In this paper we show that CSPR is better than MIM sensors for thin film sensing, i.e. when a dielectric sensing layer (SL) is deposited on the outermost metal layer of the structure. We demonstrate that the deposition of a thin film SL on the top of the outermost-layer of an optimized multilayer structure, i.e. MIM, strongly decreases the evanescent electric field and the field enhancement at metal-SL interface and decreases the sensor’s sensitivity for MIM versus CSPR. By considering the theoretical and experimental results we demonstrated that CSPR is more suitable than MIM for thin films sensing applications.
The investigation of light-matter interaction has had growing interest in the field of photonics. In particular, metalinsulator-metal (MIM) sensors are of interest owing to their high sensitivity compared to conventional sensor made by a single metal layer. The high resolution and low concentrations detection is a result of the sharp resonance of the surface plasmon polariton waveguide hybrid mode at the Au/water interface supported by MIM structures. In this context, we have implemented experiments and theoretical simulations to estimate the enhancement of the sensitivity of metal-insulatormetal sensors. By changing the refractive index of an aqueous solution of glucose, we found that the use of a metalinsulator-metal stack improves the figure of merit of the sensor 7.5 times compared to that of a conventional surface plasmon resonance sensor.
We present experimental evidence of the generation of narrow Fano line shapes in planar multilayer
structures. The Fano line shape originates from coupling between a high loss surface plasmon
polariton mode with a low loss planar waveguide mode. The line shape is shown to depend strongly
on the structural parameters that govern the position of the waveguide mode and the coupling
strength, and to be in good agreement with results of electromagnetic calculations.
Pavel Kashkarov, Olga Shalygina, Denis Zhigunov, Dmitri Sapun, Sergei Teterukov, Victor Timoshenko, Johannes Heitmann, Michael Schmidt, Margit Zacharias, Kenji Imakita, Minoru Fujii, Shinji Hayashi
Photoluminescence properties of Er-doped nanocrystalline Si/ Si02 structures have been investigated under strong optical excitation. The energy of optical excitation of Si nanocrystals was shown to be almost completely transferred to Er3+ ions in surrounding Si02. It was found that at high pump intensity the energy transfer process competes successfully with nonradiative Auger-recombination in Si nanocrystals. At high excitation level the population inversion of Er3+ ions was achieved and a decrease of the decay time of the photoluminescence at 1.5 μm was observed. Possible mechanisms of the shortening of the Er3+ ion lifetime are discussed.
Incorporation of Si nanocrystal into Er-doped glasses strongly enhances the IR luminescence of Er3+. The enhancement is believed to be due to the energy transfer from nc-Si. However, the mechanism of the interaction between nc-Si and Er3+ has not been fully understood. In this work, we have studied the interaction between nc-Si and Er3+ by photoluminescence (PL) spectroscopy and PL decay dynamics. In order to tune the luminescence energy of nc-Si to the energy separations between the discrete electronic sates of Er3+, the size of nc-Si was changed in a wide range; the PL energy of nc-Si was changed from 1.2 to 1.5 eV. At low temperatures, periodic features were observed in the PL spectra of nc-Si. The observation of the features is the first spectroscopic evidence that indicates the strong coupling between nc-Si and Er3+. Furthermore, size dependence of the energy transfer rate was estimated from the delay time of the Er3+. The effects of quantum confinement of excitons in nc-Si on the high PL efficiency of Er3+ are discussed.
Conference Committee Involvement (5)
Molecular and Nano Machines V
21 August 2022 | San Diego, California, United States
Molecular and Nano Machines IV
3 August 2021 | San Diego, California, United States
Molecular and Nano Machines III
24 August 2020 | Online Only, California, United States
Molecular and Nano Machines II
13 August 2019 | San Diego, California, United States
Molecular Machines
21 August 2018 | San Diego, California, United States
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