Dr. Soichi Owa Profile

Dr. Soichi Owa

Nikon Fellow

SPIE Involvement:

Conference Program Committee | Author | Editor

Publications (40)

Proceedings Article | 10 April 2024 Presentation + Paper

Presentation + Paper

Imaging study of phase shift spatial light modulator for digital scanner

Yoji Watanabe, Yuho Kanaya, Yosuke Okudaira, Shunsuke Kibayashi, Toshiaki Sakamoto, Yasushi Mizuno, Kazuo Masaki, Soichi Owa, Thomas Koo, Bryant Lin, Michael Tan, David Tseng, Conrad Sorensen, Sujuan Li, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan

Proceedings Volume 12953, 129530R (2024) https://doi.org/10.1117/12.3010082

KEYWORDS: Spatial light modulators, Micromirrors, Optical lithography, Maskless lithography, Phase shifting

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Proceedings Article | 29 September 2023 Paper

Paper

Pixel-based data preparation for digital scanner

Yuho Kanaya, Yoji Watanabe, Toshiaki Sakamoto, Yasushi Mizuno, Ryota Matsui, Yosuke Okudaira, Shunsuke Kibayashi, Koshi Komuro, Hiroyuki Tsukamoto, Kazuo Masaki, Soichi Owa, Thomas Koo, David Tseng, Conrad Sorensen, Sujuan Li, Michael Tan, Bryant Lin, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan

Proceedings Volume 12915, 129150G (2023) https://doi.org/10.1117/12.2684546

KEYWORDS: Maskless lithography, Direct write lithography, Scanners, Printing, Optical proximity correction, Spatial light modulators, Semiconducting wafers, Photomasks, Raster graphics, Projection systems

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SPIE Journal Paper | 5 June 2023

Development of deep ultraviolet optical maskless exposure tool for advanced lithography

Yoji Watanabe, Yuho Kanaya, Yusuke Saito, Toshiaki Sakamoto, Kazuo Masaki, Soichi Owa, Thomas Koo, David Tseng, Conrad Sorensen, Bryant Lin, Michael Tan, Sujuan Li, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan

JM3, Vol. 22, Issue 04, 041403, (June 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041403

KEYWORDS: Semiconducting wafers, Spatial light modulators, Deep ultraviolet, Optical proximity correction, UV optics, Solid state lasers, Pulsed laser operation, Lithography, Chip manufacturing, Printing

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SPIE Journal Paper | 5 June 2023 Open Access

Open Access

Review of optical direct-write technology for semiconductor manufacturing

Soichi Owa

JM3, Vol. 22, Issue 04, 041402, (June 2023) https://doi.org/10.1117/12.10.1117/1.JMM.22.4.041402

KEYWORDS: Spatial light modulators, Semiconducting wafers, Micromirrors, Optics manufacturing, Semiconductor manufacturing, Silicon, Digital micromirror devices, Wafer-level optics, Pulsed laser operation, Projection systems

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Proceedings Article | 28 April 2023 Presentation + Paper

Presentation + Paper

Expected performance of digital scanner and the potential application for advanced semiconductor fabrication

Yoji Watanabe, Yuho Kanaya, Yusuke Saito, Toshiaki Sakamoto, Kazuo Masaki, Soichi Owa, Thomas Koo, Bryant Lin, Michael Tan, David Tseng, Conrad Sorensen, Sujuan Li, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan

Proceedings Volume 12494, 124940A (2023) https://doi.org/10.1117/12.2657730

KEYWORDS: Semiconducting wafers, Scanners, Optical proximity correction, Optical lithography, Laser scanners, Semiconductors, Printing, Solid state lasers, Fabrication, Chip manufacturing

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Proceedings Article | 1 December 2022 Poster + Paper

Poster + Paper

Data preparation for digital scanner

Yuho Kanaya, Yoji Watanabe, Yusuke Saito, Toshiaki Sakamoto, Ryota Matsui, Yosuke Okudaira, Shunsuke Kibayashi, Koshi Komuro, Hiroyuki Tsukamoto, Soichi Owa, Thomas Koo, David Tseng, Conrad Sorensen, Sujuan Li, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan

Proceedings Volume 12293, 122930U (2022) https://doi.org/10.1117/12.2641419

KEYWORDS: Scanners, Data conversion, Photomasks, Spatial light modulators, Optical proximity correction, Raster graphics, Semiconducting wafers, Phase shifts, Deep ultraviolet, Maskless lithography

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Proceedings Article | 26 May 2022 Presentation + Paper

Presentation + Paper

Technology development progress of digital scanner

Yoji Watanabe, Yuho Kanaya, Yusuke Saito, Toshiaki Sakamoto, Soichi Owa, Thomas Koo, Rocky Mai, David Tseng, Conrad Sorensen, Hwan Lee, Stephen Renwick, Noriyuki Hirayanagi, Bausan Yuan

Proceedings Volume 12051, 1205108 (2022) https://doi.org/10.1117/12.2613902

KEYWORDS: Semiconducting wafers, Photomasks, Scanners, Data conversion, Spatial light modulators, Printing, Deep ultraviolet, Semiconductors, Optical lithography, Solid state lasers

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Proceedings Article | 12 October 2021 Presentation + Paper

Presentation + Paper

Subpixel pattern edge placement controllability of digital scanner

Yuho Kanaya, Yoji Watanabe, Yusuke Saito, Toshiaki Sakamoto, Soichi Owa, Noriyuki Hirayanagi, Thomas Koo, Craig Poppe, David Tseng, Conrad Sorensen, Hwan Lee, Stephen Renwick, Bausan Yuan

Proceedings Volume 11855, 1185508 (2021) https://doi.org/10.1117/12.2600898

KEYWORDS: Spatial light modulators, Projection systems, Scanners, Semiconducting wafers, Digital imaging, Image resolution, Raster graphics, Photomasks, Micromirrors

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Proceedings Article | 22 February 2021 Presentation + Paper

Presentation + Paper

Digital scanner, optical maskless exposure tool with DUV solid state laser

Yoji Watanabe, Hirotaka Kono, Yuho Kanaya, Yusuke Saito, Toshiaki Sakamoto, Soichi Owa, Noriyuki Hirayanagi, Thomas Koo, Craig Poppe, David Tseng, Conrad Sorensen, Hwan Lee, Stephen Renwick, Bausan Yuan

Proceedings Volume 11613, 1161309 (2021) https://doi.org/10.1117/12.2583680

KEYWORDS: Deep ultraviolet, Solid state lasers, Laser scanners, 3D scanning, Spatial light modulators, Semiconducting wafers, Prototyping, Laser optics, Security printing, Printing

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Proceedings Article | 15 March 2016 Paper

Paper

Expected innovations of optical lithography in the next 10 years

Soichi Owa, Noriyuki Hirayanagi

Proceedings Volume 9780, 978004 (2016) https://doi.org/10.1117/12.2219918

KEYWORDS: Optical lithography, Lithography, Metamaterials, Optical metamaterials, Split ring resonators, Immersion lithography, High volume manufacturing, Maskless lithography, Semiconductor manufacturing, Scanners, Spatial light modulators, Photomasks, Semiconductors, Particles

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Proceedings Article | 31 March 2014 Paper

Paper

Immersion lithography extension to sub-10nm nodes with multiple patterning

Soichi Owa, Shinji Wakamoto, Masayuki Murayama, Hidetami Yaegashi, Kenichi Oyama

Proceedings Volume 9052, 90520O (2014) https://doi.org/10.1117/12.2046604

KEYWORDS: Optical lithography, Transistors, Immersion lithography, Metals, Reactive ion etching, Line edge roughness, Logic, Semiconductors, Etching, Photoresist processing

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Proceedings Article | 10 March 2010 Paper

Paper

Illumination optics for source-mask optimization

Yasushi Mizuno, Tomoyuki Matsuyama, Soichi Owa, Osamu Tanitsu, Naonori Kita, Masahiko Okumura

Proceedings Volume 7640, 76401I (2010) https://doi.org/10.1117/12.846476

KEYWORDS: Fiber optic illuminators, Source mask optimization, Resolution enhancement technologies, Modulation, Lithographic illumination, Photomasks, Optical lithography, Zernike polynomials, Immersion lithography, Double patterning technology

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Proceedings Article | 10 March 2010 Paper

Paper

Topcoat-less resist approach for high volume production and yield enhancement of immersion lithography

Katsushi Nakano, Rei Seki, Tadamasa Kawakubo, Yoshihiro Maruta, Toshiyuki Sekito, Kenichi Shiraishi, Toshihiko Sei, Tomoharu Fujiwara, Tsunehito Hayashi, Yasuhiro Iriuchijima, Soichi Owa

Proceedings Volume 7640, 76400X (2010) https://doi.org/10.1117/12.846520

KEYWORDS: Semiconducting wafers, Photoresist processing, Immersion lithography, Double patterning technology, Atrial fibrillation, Polymers, Particles, Inspection, Printing, Scanning electron microscopy

Read Abstract +

Double patterning (DP) is the first candidate for extension of ArF immersion lithography, and topcoat-less (TC-less) process is an attractive process candidate compared to a topcoat process because it can make DP process simpler and reduce the chip manufacturing cost. To make the DP process viable, TC-less process performance including defectivity, auto focus (AF) and overlay performance must be validated. Nikon's latest volume production immersion lithography tool (S620D), was used for TC-less process evaluation. While S620D shows good defectivity results with both topcoat and TC-less process at 700mm/s scan speed, TC-less process showed slight improvement in defectivity compared to topcoat process. One reason being that TC-less process can suppress topcoat originated defect such as topcoat blister. The second reason is that TC-less resist can attain higher hydrophobicity than topcoat. Higher hydrophobicity is advantageous for high speed scanning because of stable movement of water meniscus, resulting in better defectivity performance. Defectivity results showed clear correlation to dynamic receding contact angle (D-RCA). Blob defect reduction is one of the challenges with TC-less resist process, because hydrophobic surface repels rinse water applied during development rinse process hence generating blob defect. However, the recent material improvements of TC-less resist have overcome this challenge and showed excellent blob defect performance. The hydrophobicity control during development process is the key factor in defect reduction. Wafer edge process is also very important for immersion lithography. The preferable wafer edge treatment for both TCless and topcoat process is to maintain uniform hydrophobicity over the entire wafer including wafer edge. While topcoat can be removed perfectly by development, unexposed TC-less resist remains on the wafer edge. WEE (wafer edge exposure) process can remove the excess resist after exposure, it's effectiveness was confirmed through experimental results. AF and overlay repeatability was evaluated on both topcoat and TC-less process; similar and sufficient performance was obtained on both processes. Based on cost of ownership calculations it is believed a 30% material cost and 10% track hardware cost reduction is feasible. These evaluations provide convincing evidence that TC-less process is ready for 32nm generation and beyond.

Proceedings Article | 4 March 2010 Paper

Paper

Tolerancing analysis of customized illumination for practical applications of source and mask optimization

Tomoyuki Matsuyama, Naonori Kita, Toshiharu Nakashima, Osamu Tanitsu, Soichi Owa

Proceedings Volume 7640, 764007 (2010) https://doi.org/10.1117/12.846639

KEYWORDS: Modulation, Distortion, Source mask optimization, Tolerancing, Error analysis, Image processing, Optical lithography, Optical simulations, Fiber optic illuminators, Scanning electron microscopy

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Proceedings Article | 10 December 2009 Paper

Paper

Feasibility studies of source and mask optimization

Toshiharu Nakashima, Tomoyuki Matsuyama, Soichi Owa

Proceedings Volume 7520, 75200C (2009) https://doi.org/10.1117/12.837161

KEYWORDS: Source mask optimization, Lithography, Photomasks, Metals, Optical lithography, Optical proximity correction, Lithographic illumination, Image transmission, Double patterning technology, Image processing

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Proceedings Article | 6 May 2009 Paper

Paper

Evolution of wavelength shrinkage in lithography

Masaomi Kameyama, Martin McCallum, Soichi Owa

Proceedings Volume 7281, 728102 (2009) https://doi.org/10.1117/12.831424

KEYWORDS: Semiconducting wafers, Lithography, Photomasks, Lithographic illumination, Manufacturing, Optical lithography, Deep ultraviolet, Imaging systems, Photoresist materials, Resolution enhancement technologies

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Proceedings Article | 16 March 2009 Paper

Paper

Control and reduction of immersion defectivity for yield enhancement at high volume production

Katsushi Nakano, Rei Seki, Toshiyuki Sekito, Masato Yoshida, Tomoharu Fujiwara, Yasuhiro Iriuchijima, Soichi Owa

Proceedings Volume 7274, 72741P (2009) https://doi.org/10.1117/12.814238

KEYWORDS: Semiconducting wafers, Particles, Head-mounted displays, Inspection, Silicon, Contamination, Immersion lithography, Scanning electron microscopy, Photoresist processing, Manufacturing

Read Abstract +

Volume device manufacturing using immersion lithography is widely accepted as the solution for patterning IC features below 40 nm half pitch. In order to ensure high yield and steady productivity tight control of defectivity is essential. A major source of defects and tool contamination is the particles introduced by incoming wafers. Particles can be categorized in two groups: particles attached to wafer surface or residues on the wafer edge. Surface or edge peeling of topcoats can also be a source of particle. Adhesion force between topcoat or topcoat-less (TC-less) resist and wafer is one of the most important parameter for particle reduction. Peeling test results proved that TC-less resist has better adhesion performance than topcoat. One of the most commonly used adhesion promoting material is hexamethyldisilazane (HMDS). Application condition of this material is an important factor in preventing wafer edge and surface topcoat peeling. Studies have shown lower temperature and longer application of HMDS shows better adhesion result. Maintaining a clean wafer surface is also a very important factor for particle reduction. Pre-rinse, which can rinse off particles before exposure, was evaluated and the efficiency was confirmed. Edge particles are more effectively reduced by pre-rinse, because weakly attached topcoat and wafer edge residues were effectively removed by pre-rinse. For further particle reduction, edge residue reduction and cut line roughness improvement were evaluated and their effectiveness was confirmed. Lower cut position achieved improved particle counts on both topcoat and TC-less resist; more frequent contact between water and cut-line can weaken the adhesion and consequently peel off topcoat or TC-less resist. Finally the relationship between defectivity and hydrophobicity is analyzed, high Receding Contact Angle (RCA) showed better defectivity result. Topcoat and TC-less process is compared for each defectivity reduction methodology and for each category TC-less process always showed lower defectivity level and less sensitivity to process conditions, indicating that TC-less process is safer and more robust than topcoat process.

Proceedings Article | 4 December 2008 Paper

Paper

Immersion lithography: its history, current status and future prospects

Soichi Owa, Hiroyuki Nagasaka

Proceedings Volume 7140, 714015 (2008) https://doi.org/10.1117/12.804709

KEYWORDS: Immersion lithography, Semiconducting wafers, Lithography, Water, Liquids, Optical lithography, Double patterning technology, Extreme ultraviolet lithography, Semiconductors, Projection systems

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Proceedings Article | 17 March 2008 Paper

Paper

Immersion defectivity study with volume production immersion lithography tool for 45 nm node and below

Katsushi Nakano, Shiro Nagaoka, Masato Yoshida, Yasuhiro Iriuchijima, Tomoharu Fujiwara, Kenichi Shiraishi, Soichi Owa

Proceedings Volume 6924, 692418 (2008) https://doi.org/10.1117/12.772270

KEYWORDS: Particles, Semiconducting wafers, Photoresist processing, Inspection, Bridges, Coating, Printing, Photomasks, Immersion lithography, Materials processing

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Proceedings Article | 7 March 2008 Paper

Paper

Studies of high index immersion lithography

Yasuhiro Ohmura, Hiroyuki Nagasaka, Tomoyuki Matsuyama, Toshiharu Nakashima, Teruki Kobayashi, Motoi Ueda, Soichi Owa

Proceedings Volume 6924, 692413 (2008) https://doi.org/10.1117/12.771622

KEYWORDS: Lithography, Surface finishing, Transparency, Immersion lithography, Refractive index, Polarization, Birefringence, Control systems, Point spread functions, Lens design

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Proceedings Article | 3 May 2007 Paper

Paper

Current status of water immersion lithography and prospect of higher index method

Soichi Owa, Katsushi Nakano, Hiroyuki Nagasaka, Hirotaka Kohno, Yasuhiro Ohmura, Martin McCallum

Proceedings Volume 6533, 653304 (2007) https://doi.org/10.1117/12.731916

KEYWORDS: Semiconducting wafers, Imaging systems, Double patterning technology, Water, Immersion lithography, Manufacturing, Lithography, Refractive index, Photoresist developing, Thin film coatings

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Proceedings Article | 29 March 2007 Paper

Paper

Immersion defectivity control by optimizing immersion materials and processes

Katsushi Nakano, Hiroshi Kato, Soichi Owa

Proceedings Volume 6519, 65190D (2007) https://doi.org/10.1117/12.711466

KEYWORDS: Particles, Semiconducting wafers, Bridges, Photoresist processing, Immersion lithography, Scanning electron microscopy, Photomasks, Signal attenuation, Materials processing, Defect detection

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Proceedings Article | 26 March 2007 Paper

Paper

Current status of high-index immersion lithography development

Yasuhiro Ohmura, Toshiharu Nakashima, Hiroyuki Nagasaka, Ayako Sukegawa, Satoshi Ishiyama, Koichi Kamijo, Masahiko Shinkai, Soichi Owa

Proceedings Volume 6520, 652006 (2007) https://doi.org/10.1117/12.711252

KEYWORDS: Microfluidics, Immersion lithography, Lithography, Refractive index, Water, Lens design, Semiconducting wafers, Absorption, Birefringence, Polarization

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Proceedings Article | 26 March 2007 Paper

Paper

Immersion defectivity study with volume production immersion lithography tool

Katsushi Nakano, Hiroshi Kato, Tomoharu Fujiwara, K. Shiraishi, Yasuhiro Iriuchijima, Soichi Owa, Irfan Malik, Steve Woodman, Prasad Terala, Christine Pelissier, Haiping Zhang

Proceedings Volume 6520, 652016 (2007) https://doi.org/10.1117/12.711464

KEYWORDS: Semiconducting wafers, Particles, Immersion lithography, Inspection, Wafer inspection, Bridges, Photoresist processing, Optical lithography, Calibration, Defect inspection

Read Abstract +

ArF immersion lithography has become accepted as the critical layer patterning solution for lithography going forward. Volume production of 55 nm devices using immersion lithography has begun. One of the key issues for the success of volume production immersion lithography is the control of immersion defectivity. Because the defectivity is influenced by the exposure tool, track, materials, and the wafer environment, a broad range of analysis and optimization is needed to minimize defect levels. Defect tests were performed using a dedicated immersion cluster consisting of a volume production immersion exposure tool, Nikon NSR-S609B, having NA of 1.07, and a resist coater-developer, TEL LITHIUS i+. Miniaturization of feature size by immersion lithography requires higher sensitivity defect inspection. In this paper, first we demonstrate the high sensitivity defect measurement using a next generation wafer inspection system, KLA-Tencor 2800 and Surfscan SP2, on both patterned and non-patterned wafers. Long-term defect stability is very important from the viewpoint of device mass production. Secondly, we present long-term defectivity data using a topcoat-less process. For tool and process qualification, a simple monitor method is required. Simple, non-pattern immersion scanned wafer measurement has been proposed elsewhere, but the correlation between such a non-pattern defect and pattern defect must be confirmed. In this paper, using a topcoat process, the correlation between topcoat defects and pattern defects is analyzed using the defect source analysis (DSA) method. In case of accidental tool contamination, a cleaning process should be established. Liquid cleaning is suitable because it can be easily introduced through the immersion nozzle. An in-situ tool cleaning method is introduced. A broad range of optimization of tools, materials, and processes provide convincing evidence that immersion lithography is ready for volume production chip manufacturing.

Proceedings Article | 11 April 2006 Paper

Paper

Defect studies of resist process for 193nm immersion lithography

Tomoyuki Ando, Katsumi Ohmori, Satoshi Maemori, Toshikazu Takayama, Keita Ishizuka, Masaaki Yoshida, Tomoyuki Hirano, Jiro Yokoya, Katsushi Nakano, Tomoharu Fujiwara, Soichi Owa

Proceedings Volume 6153, 615309 (2006) https://doi.org/10.1117/12.656164

KEYWORDS: Semiconducting wafers, Photoresist processing, Immersion lithography, Resonance energy transfer, Lithography, Materials processing, Bridges, 193nm lithography, Molecular bridges, Lens design

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Proceedings Article | 11 April 2006 Paper

Paper

Immersion topcoat and resist material improvement study by using immersion scanner

Hiroki Nakagawa, Kenji Hoshiko, Motoyuki Shima, Shiro Kusumoto, Tsutomu Shimokawa, Katsushi Nakano, Tomoharu Fujiwara, Soichi Owa

Proceedings Volume 6153, 61530D (2006) https://doi.org/10.1117/12.655541

KEYWORDS: Semiconducting wafers, Scanners, Water, Lithography, Immersion lithography, Resonance energy transfer, Photoresist processing, Photoresist materials, Silicon, Chemical analysis

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Proceedings Article | 21 March 2006 Paper

Paper

Analysis and improvement of defectivity in immersion lithography

Katsushi Nakano, Soichi Owa, Irfan Malik, Tetsuya Yamamoto, Somnath Nag

Proceedings Volume 6154, 61544J (2006) https://doi.org/10.1117/12.656195

KEYWORDS: Semiconducting wafers, Coating, Scanning electron microscopy, Immersion lithography, Particles, Bridges, Inspection, Resonance energy transfer, Photoresist processing, Defect inspection

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Proceedings Article | 15 March 2006 Paper

Paper

Current status and future prospect of immersion lithography

Soichi Owa, Hiroyuki Nagasaka, Katsushi Nakano, Yasuhiro Ohmura

Proceedings Volume 6154, 615408 (2006) https://doi.org/10.1117/12.656887

KEYWORDS: Optics manufacturing, Semiconducting wafers, Water, Resonance energy transfer, Double patterning technology, Immersion lithography, Scanners, Combined lens-mirror systems, Particles, Projection systems

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Proceedings Article | 12 May 2005 Paper

Paper

Development of polarized-light illuminator and its impact

Hisashi Nishinaga, Noriaki Tokuda, Soichi Owa, Shigeru Hirukawa, Osamu Tanitsu, Takehito Kudo, Hirohisa Tanaka

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599356

KEYWORDS: Polarization, Fiber optic illuminators, Lithographic illumination, Resolution enhancement technologies, Wave plates, Lithography, Photomasks, Semiconducting wafers, Line width roughness, Image processing

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Proceedings Article | 12 May 2005 Paper

Paper

Full-field exposure tools for immersion lithography

Soichi Owa, Hiroyuki Nagasaka, Yuuki Ishii, Kenichi Shiraishi, Shigeru Hirukawa

Proceedings Volume 5754, (2005) https://doi.org/10.1117/12.599352

KEYWORDS: Resonance energy transfer, Semiconducting wafers, Thin film coatings, Combined lens-mirror systems, Contamination, Phase shifts, Polarization, Projection systems, Critical dimension metrology, Inspection

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Proceedings Article | 28 May 2004 Paper

Paper

Feasibility of immersion lithography

Soichi Owa, Hiroyuki Nagasaka, Yuuki Ishii, Osamu Hirakawa, Taro Yamamoto

Proceedings Volume 5377, (2004) https://doi.org/10.1117/12.536852

KEYWORDS: Polarization, Semiconducting wafers, Water, Immersion lithography, Reflectivity, Projection systems, Optical sensing, Photomasks, Particles, Optical design

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SPIE Journal Paper | 1 January 2004

Advantage and feasibility of immersion lithography

Soichi Owa, Hiroyuki Nagasaka

JM3, Vol. 3, Issue 01, (January 2004) https://doi.org/10.1117/12.10.1117/1.1637593

KEYWORDS: Immersion lithography, Semiconducting wafers, Water, Liquids, Photomasks, Lithography, Polarization, Projection systems, Binary data, Temperature metrology

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Proceedings Article | 26 June 2003 Paper

Paper

Nikon F2 exposure tool development

Soichi Owa, Yukako Matsumoto, Yasuhiro Ohmura, Shigeru Sakuma, Takashi Aoki, Jin Nishikawa, Hiroyuki Nagasaka, Takeyuki Mizutani, Naomasa Shiraishi, Kazuhiro Kido, Issei Tanaka, Jun Nagatsuka

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.485451

KEYWORDS: Pellicles, Projection systems, Photomasks, Lithography, Coating, Birefringence, Crystals, Binary data, Refractive index, Optical design

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Proceedings Article | 26 June 2003 Paper

Paper

Immersion lithography: its potential performance and issues

Soichi Owa, Hiroyuki Nagasaka

Proceedings Volume 5040, (2003) https://doi.org/10.1117/12.504599

KEYWORDS: Immersion lithography, Water, Semiconducting wafers, Liquids, Photomasks, Projection systems, Temperature metrology, Lithography, Polarization, Binary data

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Proceedings Article | 30 July 2002 Paper

Paper

Progress of Nikon's F2-exposure tool development

Naomasa Shiraishi, Soichi Owa, Yasuhiro Ohmura, Takashi Aoki, Yukako Matsumoto, Jin Nishikawa, Issei Tanaka

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474607

KEYWORDS: Birefringence, Crystals, Projection systems, Optical design, Wavefronts, Lithography, Chemical species, Absorption, Combined lens-mirror systems, Calcium

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Proceedings Article | 30 July 2002 Paper

Paper

Development of environmental control technologies for 157-nm lithography at ASET

Yasuaki Fukuda, Seiji Takeuchi, Takashi Aoki, Hiroyuki Nagasaka, Soichi Owa, Fumika Yoshida, Youichi Kawasa, Keiji Egawa, Takehito Watanabe, Ikuo Uchino, Akira Sumitani, Kiyoharu Nakao

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474622

KEYWORDS: Adhesives, Oxygen, Metals, Quartz, Lithography, Systems modeling, Transmittance, Information operations, Lenses, Scanning electron microscopy

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Proceedings Article | 14 September 2001 Paper

Paper

Current status of Nikon's F2 exposure tool development

Naomasa Shiraishi, Soichi Owa, Yasuhiro Ohmura, Takashi Aoki, Yukako Matsumoto, Masato Hatasawa, Takashi Mori, Issei Tanaka

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435631

KEYWORDS: Photomasks, Projection systems, Coating, Combined lens-mirror systems, Oxygen, Lithography, Optics manufacturing, Mirrors, Optical components, Logic devices

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Proceedings Article | 14 September 2001 Paper

Paper

Present status of development of gas-purging and chemically clean technologies at ASET

Yasuaki Fukuda, Seiji Takeuchi, Takashi Aoki, Soichi Owa, Fumika Yoshida, Youichi Kawasa, Akira Sumitani, Keiji Egawa, Takehito Watanabe, Kiyoharu Nakao

Proceedings Volume 4346, (2001) https://doi.org/10.1117/12.435763

KEYWORDS: Oxygen, Nitrogen, Surface finishing, Contamination, Lithography, Sensors, Gases, Optical testing, Transmittance, Absorption

Read Abstract +

Proceedings Article | 30 December 1999 Paper

Paper

Dry and F-doped fused silica for photomask substrate in 157-nm lithography

Hiroki Jinbo, Seishi Fujiwara, Norio Komine, Naomasa Shiraishi, Soichi Owa

Proceedings Volume 3873, (1999) https://doi.org/10.1117/12.373336

KEYWORDS: Silica, Transmittance, Lithography, Birefringence, Photomasks, Vacuum ultraviolet, Fluorine, Absorption, Scattering, Laser scattering

Read Abstract +

Proceedings Article | 7 July 1997 Paper

Paper

Experimental study on nonlinear multiple-exposure method

Hiroshi Ooki, Derek Coon, Soichi Owa, Toshihiko Sei, Kazuya Okamoto

Proceedings Volume 3051, (1997) https://doi.org/10.1117/12.276012

KEYWORDS: Nonlinear optics, Optical lithography

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Showing 5 of 40 publications

Proceedings Volume Editor (4)

SPIE Conference Volume | 14 April 2021

Optical Microlithography XXXIV

SPIE Conference Volume | 13 April 2020

Optical Microlithography XXXIII

SPIE Conference Volume | 17 June 2019

Optical Microlithography XXXII

SPIE Conference Volume | 23 May 2018

Optical Microlithography XXXI

Conference Committee Involvement (16)

Optical and EUV Nanolithography XXXVII

26 February 2024 | San Jose, California, United States

Optical and EUV Nanolithography XXXVI

27 February 2023 | San Jose, California, United States

Optical and EUV Nanolithography XXXV

25 April 2022 | San Jose, California, United States

Optical Lithography XXXIV

22 February 2021 | Online Only, California, United States

Optical Microlithography XXXIII

25 February 2020 | San Jose, California, United States

Showing 5 of 16 Conference Committees

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