We report a selective injection design for GaAs-based Photonic-Crystal Surface-Emitting Lasers (PCSELs). COMSOL and FDTD simulations are carried out to design the injection electrode size to achieve largest gain overlapping factors with optical mode and lowest gain threshold. The PCSEL devices are fabricated with GaAs-based Multiple Quantum Well (MQW) wafer. Devices with surface area of 250×250 μm2 are fabricated with different injection electrode sizes. Testing results show that the best beam properties and an output power of 750 mW were achieved with a 150 μm p-electrode design, demonstrating selective injection impact to PCSEL beam profile.
In this investigation, two techniques of epitaxial growth of GaSb quantum dots on silicon substrates are explored. The first method involves the direct nucleation of GaSb islands on the Silicon (100) substrate and an AlSb barrier layer. The second method combines selective-area epitaxy (SAE) with Vapor-Liquid-Solid (VLS) growth principles in order to achieve suitable growth temperatures for antimonides. Our analysis focuses on the presence of pseudomorphic strain due to the high mismatch in lattice constant between the dots and the substrate. Transmission electron microscopy and photoluminescence spectroscopy are used to characterize the dots analyzed in these studies.
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