The polycrystalline LiNbO3 films were grown by the ion-beam sputtering method on (001)Si substrates. Dielectric losses of the grown (001)Si-LiNbO3 arises from conductivity of LiNbO3 films and increases when temperature rises. Ac conductivity of the studied heterostructures is described by the correlated-barrier hopping (CBH) model and it is induced by the jumps of charge carries between charge centers with concentration D = 3,5·1022 m-3.
By the method of magnetron sputtering the nanocrystalline films LiNbO3 on the surfaces of (001)Si, (111)Si and of Si-
SiO2 heterostructure have been synthesized. The elemental and phase composition, structure and surface morphology, the
electrical-physical parameters of the heterostructures (001)Si-LiNbO3 and (111)Si-SiO2-LiNbO3 have been studied.
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