Most semiconductor manufacturers expect 193nm immersion lithography to remain the dominant
patterning technology through the 32nm technology node. If this remains the case, the interaction
of more complex designs with shrinking process windows will severely limiting parametric yield.
The industry is responding with strategies based upon design for manufacturability (DFM) and
multi-variate advanced process control (APC). The primary goal of DFM is to enlarge the process
yield window, while the primary goal of APC is to keep the manufacturing process in that yield
window. In this work, we discuss new and innovative process metrics, including simulation-based
virtual metrology, that will be needed for yield at the 32nm technology node.
A systematic study has been conducted to evaluate accuracy and precision of spectral scatterometry used for two-dimensional (2D) characterization of trenches formed in fluorinated silicon glass (FSG). Experiments were done on short-flow dual-damascene Cu interconnect material. Trench critical dimensions (CD) obtained using KLA-Tencor's spectral scatterometer were correlated with data collected using CD atomic force microscope (AFM), CD scanning electron microscope (SEM) and transmission electron microscope (TEM). 3 major trench characteristics were analyzed: trench width, trench depth and sidewall angle. Spectral scatterometry demonstrated an excellent correlation (above 0.96) with CD AFM and SEM in tested trench width range of (80-240) nm and trench depth range of (410-450) nm. Spectral scatterometry showed acceptable correlation of 0.55 and minimal offset of 0.05 degrees with AFM in tested sidewall angle range of (87.5-89) degrees. Spectral scatterometry has demonstrated better than 1.0 nm and 0.2 degrees dynamic precision (3s) for both width and height and sidewall angle, respectively. We conclude that KLA-Tencor's SpectraCD system is capable of accurate and precise 2D characterization of FSG trenches. We recommend scatterometry as a high throughput and non-destructive metrology for trench linewidth and depth monitoring in low-K dielectric interconnect manufacturing.
KEYWORDS: Single crystal X-ray diffraction, Critical dimension metrology, Semiconducting wafers, Scanning electron microscopy, Process control, Spectroscopy, Spectroscopes, Metrology, Precision measurement, Control systems
Smaller device dimensions and tighter process control windows have created a need for CD metrology tools having higher levels of precision and accuracy. Furthermore, the need to detect and measure changes in feature profiles is becoming critical to in-line process control and stepper evaluation for sub-0.18micrometers technology. Spectroscopic CD (SCDTM) is an optical metrology technique that can address these needs. This work describes the use of a spectroscopic CD metrology tool to measure and characterize the focus and exposure windows for the process. The results include comparison to the established in-line CD-SEM, as well as a cross-section SEM. Repeatability and long-term stability data form a gate level nominal process are also presented.
The continuing demand for higher frequency microprocessors and larger memory arrays has led to decreasing device dimensions and smaller process control windows. Decreasing process control windows have created a need for higher precision metrology to maintain an acceptable precision to tolerance ratio with a reasonable sampling rate. In order to determine and reduce across chip, across wafer, and across lot linewidth variations, higher sampling is required which, in turn, demands faster move acquire measure (MAM) times to maintain throughput. Finally, the need to detect and quantify sidewall angle changes in addition to CD measurements is becoming critical. Spectroscopic Scatterometry is a metrology technique which offers the potential to meet these requirements. This work explores some of the fundamental technology concerns for implementing scatterometry in a manufacturing environment. These concerns include mark requirements and characterization necessary for library generation. Comparison of scatterometry data to in-line CD SEM, x-section SEM, and AFM results will be presented.
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