We present experimental study of photoresponse in small area GaAs/AlGaAs heterojunction planar detector induced by
nanosecond CO2 laser pulses. This device revealed itself as a fast IR sensor operating at room temperature. Hot carrier
effects are proposed to be responsible for the photoresponse formation.
Algirdas Sužiedėlis, Valerij Petkun, Antoni Kozič, Viktorija Kazlauskaitė, Aurimas Čerškus, Gytis Steikūnas, Jonas Gradauskas, Jurgis Kundrotas, Steponas Ašmontas, Irina Papsujeva, Aleksandras Narkūnas, Tomas Anbinderis, Vladimir Umansky, Hadas Shtrikmann
Planar microwave detectors on the base of modulation doped AlGaAs/GaAs structures with &dgr;-doped layer were
investigated in (26÷120) GHz frequency range. Comparison of the features of the microwave diodes on the base of
modulation doped structures with &dgr;- and smoothly-distributed doping impurities in the AlGaAs barrier is presented.
Influence of the layers composing the modulation doped structure onto detective properties of the microwave diodes is
ascertained both theoretically and experimentally. In the case of the structure with &dgr;-doping this influence was less,
especially, in the case of symmetrically shaped structure with n-n+ and homogeneous asymmetrically shaped modulation
doped structure.
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