The processes of correcting the optical characteristics of multilayer interference filters and heterojunctions obtained by liquid epitaxy on the base of In4Se3, In4(Se3)1-x(Te3)x and CdSb crystals were studied by laser modification of the film structure. The conditions for optimization of the properties of the created elements for use in the infrared range by laser action are determined.
Optimizing effect of pulsed laser radiation on the structure of the In4Se3 and In4Тe3 epitaxial layers obtained by liquid phase epitaxy was studied by SEM, AFM, and EDS techniques. Ordered quasi-periodic micro- and nanostructures were created on the samples by laser melting. When studying the transverse chips of the structures based on the In4Se3, it was found that laser treatment leads to the formation of both narrow band gap and wide band gap phases of the In – Se system in the epitaxial layer. The action of laser treatment leads to the inversion of the conductivity type and to the formation of the laser photosensitive surface-barrier structures, reduces the influence of recombination processes on the heteroboundary. Optical studies have shown the efficiency of controlled laser action on the structural-phase state of the In4Se3 and In4Тe3 layers and improving their optical characteristics and photosensitivity. An increase in the sensitivity of the FTO-GaP diode structure at the wavelength 254 nm, as well as in the entire spectral range is observed with the laser treatment action
Epitaxial layers and complex heterostructures on the base of the CdTe and Cd1-xMnxTe crystals were obtained by pulsed laser irradiation both in their transparency and absorption regions. Structural perfection of the laser-epitaxial layers, transition regions and distribution of the Te and Cd inclusions in the area of the laser action were studied. Analysis of the U-V and C-V characteristics of the obtained structures indicates a decrease in influence of surface states at the hetero-boundaries as a result of laser treatment in optimal mode, and also a reduction of reverse dark current and loss current. The spectral characteristics of the laser-epitaxial structures on the base of CdTe and Cd1-xMnxTe show, that they are promising materials for X- and gamma-radiation detectors.
Peculiarities of morphology and electric properties of X-ray and γ-ray detectors developed by graphene deposition onto commercially available (111) oriented CdTe:Cl wafers has been investigated. Laser treatment of graphene contact using millisecond YAG-laser with an energy density of 0.1–4.5 J/cm2 has been carried out in order to modify and improve their structure and phase state.
The graphical-analytical method was used to find the solution of the inverse problem in ellipsometry for the system consisting of a transparent single-layer dielectric film on the Cd1-xMnxTe crystal substrate. The nomograms in the φ-Δ ellipsometric coordinates were simulated to determine the refractive index of the film and its thickness for different incidence angles of the laser beam with 632.8 nm wavelength. The treatment of the Cd1-xMnxTe (х=0.1-0.4) thin films and crystal surfaces was carried out with the millisecond (τ=1.5 ms) and nanosecond (τ=80 ns) laser. The structuralphase transformations of the films and layers in the Cd-Mn-Te system were studied in the AFM and SEM, and their ellipsometric characteristics were determined using photometric laser ellipsometer. The heterogeneity of the thickness and structure of the laser-modified Cd1-xMnxTe surface layers were analyzed using calculated distribution of the refractive index of the films and its dependence on the incidence angle of the laser beam.
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