In this work we study influence of α-particles and gamma-ray onto MIS structures being under high-field FowlerNordheim injections of electrons into the gate dielectric. We discover that ionizing current occurring at the time of radiation of MIS structures being under high-field injection of electrons by constant current can significantly lower density of injection current and decrease electric field in the dielectric film. We demonstrate that from analysis of time dependency of voltage across MIS structure at the time of constant current flowing we can determine a value of ionization current. The effect can be utilized for sensors of radiations which allow to control both intensity of radiation and a value of integral absorbed dose of ionizing radiation. We develop a model describing processes of change of charge state of MIS structures being under high-field injection at radiation influence. This model takes into account an interaction of injected electrons with products occurring in the dielectric film as a result of ionization radiation.
The paper proposes a new method of stress and measurement modes for research of thin dielectric films of MIS structures. The method realizes injection of the most part of charge into gate dielectric in one of stress modes: either current owing through dielectric is constant or voltage applied to gate is constant. In order to acquire an additional information about changing of charge state of MIS structure, the stress condition is interrupted in certain time ranges and during these time ranges the mode, in which structure is, is the mode of measurement. In measurement mode, changing of electric fields at interfaces between dielectric and semiconductor is monitored. By using these data, density of charge, which is accumulated in gate dielectric, and its centroid are calculated. Besides, by using these data, one studies processes of generation and relaxation of charge in dielectric. In order to raise precision of the method and reduce an influence of switching effects in measurement mode, density of measurement current should be much lower than density of stress current.
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