Mr. Wataru Shibayama Profile

Wataru Shibayama

at Nissan Chemical Corp

SPIE Involvement:

Author

Publications (19)

Proceedings Article | 13 November 2024 Presentation

Drastic dose reduction of metal oxide resist induced by functional surface treatment process and primers

Taiki Saijo, Kodai Kato, Satoshi Takeda, Mamoru Tamura, Wataru Shibayama, Kiyofumi Wada

Proceedings Volume PC13215, PC132150O (2024) https://doi.org/10.1117/12.3034659

KEYWORDS: Metal oxides, Photoresist processing, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Chemical vapor deposition, Tin, Silica

Read Abstract +

SPIE Journal Paper | 9 September 2024

Mitigating pattern collapse in high-resolution extreme ultraviolet lithography using the organic dry development rinse process

Seonggil Heo, Seungjoo Baek, Mihir Gupta, Hyo Seon Suh, Kodai Kato, Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto

JM3, Vol. 23, Issue 03, 034603, (September 2024) https://doi.org/10.1117/12.10.1117/1.JMM.23.3.034603

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Bridges, Capillaries, Photoresist developing, Windows, Photoresist processing, Etching, Photoresist materials, Dry etching

Read Abstract +

Proceedings Article | 10 April 2024 Presentation

Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto, Syuhei Shigaki, Yuki Furukawa, Taiki Saijo, Kodai Kato, Seonggil Heo, Hyo Seon Suh

Proceedings Volume 12957, 1295702 (2024) https://doi.org/10.1117/12.3010078

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Capillaries, Metal oxides, Liquids, Dry etching, Materials processing

Read Abstract +

Proceedings Article | 9 April 2024 Presentation + Paper

Organic dry development rinse (O-DDR) process for spin-on MOR to prevent pattern collapse

Seonggil Heo, Seungjoo Baek, Mihir Gupta, Hyo Seon Suh, Kodai Kato, Satoshi Takeda, Wataru Shibayama, Rikimaru Sakamoto

Proceedings Volume 12957, 1295710 (2024) https://doi.org/10.1117/12.3011118

KEYWORDS: Semiconducting wafers, Windows, Bridges, Extreme ultraviolet lithography, Photoresist processing, Critical dimension metrology, Photoresist materials, Metal oxides, Image processing, Capillaries

Read Abstract +

Proceedings Article | 9 April 2024 Presentation + Paper

Enhancement of sensitivity and resolution by functional surface treatment process and primers (FSTP)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Kodai Kato, Yuki Furukawa, Taiki Saijo, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 12957, 1295716 (2024) https://doi.org/10.1117/12.3011014

KEYWORDS: Extreme ultraviolet, Optical lithography, Film thickness, Extreme ultraviolet lithography, Etching, Coating, Chemical vapor deposition, Windows, Surface roughness, Lithography

Read Abstract +

Proceedings Article | 22 November 2023 Presentation

Organic dry development rinse (O-DDR) process for MOR patterning toward high-NA EUV

Satoshi Takeda, Wataru Shibayama, Kodai Kato, Shuhei Shigaki, Yuki Furukawa, Taiki Saijo, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume PC12750, PC1275006 (2023) https://doi.org/10.1117/12.2684973

KEYWORDS: Optical lithography, Extreme ultraviolet, Extreme ultraviolet lithography, Capillaries, Polymers, Metal oxides, Materials processing, Liquids, Dry etching

Read Abstract +

Proceedings Article | 22 November 2023 Poster

Functional surface treatment process and primers for extremely enhancing EUVL performance

Taiki Saijo, Yuki Furukawa, Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Makoto Nakajima, Rikimaru Sakamoto, Kodai Kato

Proceedings Volume PC12750, PC127500T (2023) https://doi.org/10.1117/12.2687489

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Chemical vapor deposition, Windows, Tin, Silica, Optical lithography, Lithography, Coating

Read Abstract +

Proceedings Article | 1 May 2023 Presentation + Paper

New functional surface treatment process and primers for high-NA EUV lithography

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Kodai Kato, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 12498, 124980O (2023) https://doi.org/10.1117/12.2659979

KEYWORDS: Extreme ultraviolet lithography, Extreme ultraviolet, Etching, Film thickness, Coating, Chemical vapor deposition, Optical lithography, Surface roughness, Monolayers

Read Abstract +

Proceedings Article | 12 October 2018 Presentation

Advanced development of organic and inorganic under layers for EUV lithography (Conference Presentation)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Mamoru Tamura, Yasunobu Someya, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10809, 108090Y (2018) https://doi.org/10.1117/12.2503298

KEYWORDS: Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Lithography, Etching, Carbon, System on a chip, Metals

Read Abstract +

Proceedings Article | 19 March 2018 Presentation + Paper

DDR process and materials for novel tone reverse technique

Shuhei Shigaki, Wataru Shibayama, Satoshi Takeda, Mamoru Tamura, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10583, 105830M (2018) https://doi.org/10.1117/12.2297517

KEYWORDS: Optical lithography, Materials processing, Extreme ultraviolet lithography, Etching, Lithography, Polymers, Photomasks, Dry etching, Photoresist processing, Extreme ultraviolet

Read Abstract +

Proceedings Article | 16 October 2017 Presentation + Paper

DDR process and materials for NTD photo resist in EUV lithography

Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10450, 104500N (2017) https://doi.org/10.1117/12.2280536

KEYWORDS: Etching, Materials processing, Extreme ultraviolet lithography, Polymers, Dry etching, Extreme ultraviolet, Photoresist processing, Optical lithography, Contamination

Read Abstract +

We developed the novel process and material which can prevent the pattern collapse issue perfectly. The process was Dry Development Rinse (DDR) process, and the material used in this process was DDR material. DDR material was containing siloxane polymer which could be replaced the space area of the photo resist pattern. And finally, the reversed pattern would be created by dry etching process without any pattern collapse issue. This novel process was useful not only in positive tone development (PTD) process but also in negative tone development (NTD) process. We newly developed DDR material for NTD process. Novel DDR material for NTD consists of special polymer and it used organic solvent system. New DDR materials showed no mixing property for NTD PR, so fine pattern of NTD PR could be filled by DDR materials then tone reverse could be achieved by dry etching process. Tone reverse was successfully achieved by combination of NTD PR and DDR process keeping good pattern quality in EUV lithography. Reversed pattern below hp 14nm was obtained without any pattern collapse issue, which couldn’t be created by just using normal NTD process. Reversed contact hole could be obtained in NTD-DDR process at 24nm hole size. Reversed C/H made by NTD pillar showed good LCDU compared to PTD C/H. In addition, reversed C/H at 20nm hole size could be achieved in NTD-DDR process. In DDR process, enough etch back is important to obtained fine reversed pattern with lower roughness but long etch back time caused degradation of the reversed pattern. Then etch back time was evaluated with NTD PR and DDR material. Reversed C/H showed minimum LCDU when short etch back time was applied, however degradation of LCDU was observed when long etch back was applied. LCDU of reversed C/H made by NTD-DDR process was 3.2nm. On the other hands, LCDU of normal C/H made by PTD process was 3.5nm, so reversed C/H from NTD pillar showed better LCDU than PTD C/H when suitable etch back was applied.

Proceedings Article | 16 October 2017 Presentation

Single-nm resolution techniques with DDR process and materials (Conference Presentation)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10450, 1045019 (2017) https://doi.org/10.1117/12.2280508

KEYWORDS: Optical lithography, Extreme ultraviolet, Etching, Extreme ultraviolet lithography, Photomasks, Materials processing, Carbon, System on a chip, Line width roughness, Contamination

Read Abstract +

Proceedings Article | 24 March 2017 Presentation + Paper

Single-nm resolution approach by applying DDRP and DDRM

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 10143, 101431H (2017) https://doi.org/10.1117/12.2258180

KEYWORDS: Etching, Optical lithography, Photomasks, Extreme ultraviolet, Silicon, Line width roughness, Line edge roughness, Extreme ultraviolet lithography, Materials processing, Carbon, System on a chip, Lithography

Read Abstract +

Proceedings Article | 25 March 2016 Paper

Novel ArF extension technique by applying Dry Development Rinse Process (DDRP) and Materials (DDRM)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Ryuji Onishi, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 9779, 97791A (2016) https://doi.org/10.1117/12.2219521

KEYWORDS: Lithography, Materials processing, Extreme ultraviolet lithography, Line width roughness, Electroluminescence, Optical lithography, Standards development, Photoresist processing, Etching, System on a chip, Silicon, Immersion lithography, Dry etching

Read Abstract +

Proceedings Article | 21 March 2016 Paper

Novel DDR process and materials for front-edge NTD process

Shuhei Shigaki, Satoshi Takeda, Wataru Shibayama, Ryuji Onishi, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 9779, 97790P (2016) https://doi.org/10.1117/12.2218825

KEYWORDS: Materials processing, Polymers, Image quality, Image processing, Dry etching, Etching, Optical lithography, Photomasks, Lithography, Extreme ultraviolet lithography, Extreme ultraviolet, Silicon

Read Abstract +

Proceedings Article | 18 March 2016 Paper

Approach to hp10nm resolution by applying Dry Development Rinse Process (DDRP) and Materials (DDRM)

Wataru Shibayama, Shuhei Shigaki, Satoshi Takeda, Ryuji Onishi, Makoto Nakajima, Rikimaru Sakamoto

Proceedings Volume 9776, 977609 (2016) https://doi.org/10.1117/12.2219475

KEYWORDS: Optical lithography, Extreme ultraviolet, Etching, Photomasks, Extreme ultraviolet lithography, Materials processing, Carbon, System on a chip, Silicon, Lithography, Dry etching, Line width roughness, Resistance

Read Abstract +

Proceedings Article | 27 March 2014 Paper

EUV lithography and etching performance enhancement by EUV sensitive Si hard mask (EUV Si-HM) for 1Xnm hp generation

Wataru Shibayama, Shuhei Shigaki, Noriaki Fujitani, Ryuji Onishi, Rikimaru Sakamoto

Proceedings Volume 9051, 905116 (2014) https://doi.org/10.1117/12.2046475

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Etching, System on a chip, Roentgenium, Photomasks, Line width roughness, Lithography, Chromophores, Silicon

Read Abstract +

Proceedings Article | 1 April 2013 Paper

EUV sensitive Si containing hard mask (Si-HM) for PTD and NTD process in EUVL

Wataru Shibayama, Shuhei Shigaki, Rikimaru Sakamoto, Ryuji Onishi, Hiroaki Yaguchi, Bang Ching Ho

Proceedings Volume 8679, 867914 (2013) https://doi.org/10.1117/12.2011441

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Etching, System on a chip, Photomasks, Roentgenium, Silicon, Chromophores, Line width roughness, Photoresist processing

Read Abstract +

Proceedings Article | 16 April 2011 Paper

Development of new Si-contained hardmask for tri-layer process

Makoto Nakajima, Yuta Kanno, Wataru Shibayama, Satoshi Takeda, Masakazu Kato, Takashi Matsumoto

Proceedings Volume 7972, 797225 (2011) https://doi.org/10.1117/12.879357

KEYWORDS: Etching, System on a chip, Chromophores, Photoresist materials, Silicon, Lithography, Reflectivity, Photomasks, Sensors, Plasma etching

Read Abstract +

Showing 5 of 19 publications

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years