Prof. Wei-I Lee Profile

Prof. Wei-I Lee

at National Yang Ming Chiao Tung Univ.

SPIE Involvement:

Author

Publications (7)

SPIE Journal Paper | 21 April 2015

High-efficiency and low assembly-dependent chip-scale package for white light-emitting diodes

Che-Hsuan Huang, Kuo-Ju Chen, Ming-Ta Tsai, Min-Hsiung Shih, Chia-Wei Sun, Wei-I Lee, Chien-Chung Lin, Hao-Chung Kuo

JPE, Vol. 5, Issue 01, 057606, (April 2015) https://doi.org/10.1117/12.10.1117/1.JPE.5.057606

KEYWORDS: Light sources and illumination, Light emitting diodes, Reflectors, Packaging, Luminous efficiency, Light sources, Reflectivity, Monte Carlo methods, Internal quantum efficiency, Scattering

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SPIE Journal Paper | 7 July 2014 Open Access

High performance 380-nm ultraviolet light-emitting-diodes with 3% efficiency droop by using free-standing GaN substrate manufacturing from GaAs substrate

Chen-Yu Shieh, Ming-Ta Tsai, Zhen-Yu Li, Hao-Chung Kuo, Jenq-Yang Chang, Gou-Chung Chi, Wei-I Lee

JNP, Vol. 8, Issue 01, 083081, (July 2014) https://doi.org/10.1117/12.10.1117/1.JNP.8.083081

KEYWORDS: Sapphire, Gallium nitride, Transmission electron microscopy, Ultraviolet radiation, Raman spectroscopy, Crystals, Satellites, Gallium arsenide, Interfaces, Manufacturing

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Proceedings Article | 28 February 2012 Paper

Free-standing a-plane GaN substrates grown by HVPE

Yin-Hao Wu, Yen-Hsien Yeh, Kuei-Ming Chen, Yu-jen Yang, Wei-I Lee

Proceedings Volume 8262, 82621Z (2012) https://doi.org/10.1117/12.907683

KEYWORDS: Gallium nitride, Sapphire, Aluminum nitride, Metalorganic chemical vapor deposition, Scanning electron microscopy, Laser liftoff, Quantum wells, Raman spectroscopy, Multilayers, Vapor phase epitaxy

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Proceedings Article | 4 March 2011 Paper

Hydrogen etch of GaN and its application to produce porous GaN caves

Yen-Hsien Yeh, Ying-Chia Hsu, Yin-Hao Wu, Kuei-Ming Chen, Wei-I Lee

Proceedings Volume 7939, 79390P (2011) https://doi.org/10.1117/12.874422

KEYWORDS: Etching, Gallium nitride, Hydrogen, Chemical species, Gallium, Scanning electron microscopy, Nitrogen, Vapor phase epitaxy, Sapphire, Manufacturing

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Proceedings Article | 3 February 2009 Paper

High quality free-standing GaN thick-films prepared by hydride vapor phase epitaxy using stress reducing techniques

Hsin-Hsiung Huang, Wei-I Lee, Kuei-Ming Chen, Ting-Li Chu, Pei-Lun Wu, Hung-Wei Yu, Po-Chun Liu, Chu-Li Chao, Tung-Wei Chi, Jenq-Dar Tsay, Li-Wei Tu

Proceedings Volume 7231, 723116 (2009) https://doi.org/10.1117/12.814441

KEYWORDS: Gallium nitride, Sapphire, Raman spectroscopy, Semiconducting wafers, Scanning electron microscopy, Optical lithography, Micro raman spectroscopy, Phonons, Vapor phase epitaxy, Laser liftoff

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Proceedings Article | 14 May 2001 Paper

Influence of barrier growth temperature on the properties of InGaN/GaN quantum wells

Tzu-Chi Wen, Shih-Chang Lee, Wei-I Lee

Proceedings Volume 4278, (2001) https://doi.org/10.1117/12.426844

KEYWORDS: Indium gallium nitride, Gallium nitride, Indium, Quantum wells, Indium nitride, X-ray diffraction, Diffraction, Satellites, Crystals, Semiconductor lasers

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Proceedings Article | 9 November 1999 Paper

Common deep level in GaN

Tzu-Chi Wen, Shih-Chang Lee, Wei-I Lee, Jen-Da Guo, Ming Shiann Feng

Proceedings Volume 3899, (1999) https://doi.org/10.1117/12.369421

KEYWORDS: Gallium nitride, Capacitance, Nitrogen, Epitaxy, Temperature metrology, Gallium, Spectroscopy, Oxygen, Molecular beam epitaxy, Diodes

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Showing 5 of 7 publications

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