Hydrogen-based dry plasmas, generated in inductively coupled plasma reactors have been demonstrated to be very
effective in fabricating high fill-factor mesa of Hg1-xCd xTe multi-layer hetero-structure material for infrared focal plane
array applications. To obtain reasonable dry etching process for Hg 1-xCd xTe, it is essential to investigate the physical,
chemical, and electrical characteristics of the surface. This paper explores the effect of varying the plasma process
parameters on the surface of Hg 1-xCd xTe. The surface chemical analysis was carried out using spot X-ray photoelectron
spectroscopy (XPS), the surface roughness was measured by atomic force microscopy (AFM), and p-to-n type
conversion depth was assessed by a reliable current-voltage test of a designed structure basing on material-chip
technology concept and a convenient technology of cross-section surface potential imaging (SPM). At last, Hg 1-xCd xTe
etched surfaces with roughness low and mechanical or electrical damage free were achieved.
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