Dr. William Hubbard Profile

Dr. William Hubbard

at Aerospace Corp

SPIE Involvement:

Author

Publications (2)

Proceedings Article | 5 March 2021 Presentation + Paper

Out-diffusion of Pd as part of degradation mechanisms in RF AlGaN-GaN HEMTs with Ni-Pd-Au Schottky contacts: part II

Yongkun Sin, Dmitry Veksler, William Hubbard, Scott Sitzman, Miles Brodie, Zachary Lingley, Neil Ives

Proceedings Volume 11686, 116862A (2021) https://doi.org/10.1117/12.2576910

KEYWORDS: Field effect transistors, Palladium, Gallium nitride, Transmission electron microscopy, Silicon carbide, Reliability, Strain analysis, Physics, Manufacturing

Read Abstract +

Proceedings Article | 27 February 2020 Paper

Out-diffusion of Pd as a potential degradation mechanism in GaN HEMTs with Ni-Pd-Au Schottky contacts

Yongkun Sin, Dmitry Veksler, William Hubbard, Miles Brodie, Scott Sitzman, Zachary Lingley

Proceedings Volume 11280, 112801I (2020) https://doi.org/10.1117/12.2543432

KEYWORDS: Palladium, Field effect transistors, Gallium nitride, Transmission electron microscopy, Nickel, Reliability, Gold, Silicon carbide, Metals

Read Abstract +

View contact details

UPDATE YOUR PROFILE

Is this your profile? Update it now.

Sign into your SPIE.org account

Don’t have a profile and want one?

Create an account on SPIE.org

Keywords/Phrases

Search In:

Publication Years