Mr. Wolfgang L. Kalb Profile

Wolfgang L. Kalb

at ETH Zurich

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Proceedings Article | 13 September 2007 Paper

High performance organic field-effect transistors with fluoropolymer gate dielectric

Wolfgang Kalb, Thomas Mathis, Simon Haas, Arno Stassen, Bertram Batlogg

Proceedings Volume 6658, 665807 (2007) https://doi.org/10.1117/12.738522

KEYWORDS: Dielectrics, Transistors, Organic semiconductors, Crystals, Semiconductors, Thin films, Polymers, Dielectric breakdown, Electrodes, Gold

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Electrical stability is essential for a successful commercialization of organic semiconductor devices. We report on organic field-effect transistors with unprecedented electrical stability. The single crystal and thin-film transistors employ a fluorocarbon polymer as gate dielectric (Cytop^TM) and pentacene or rubrene as the organic semiconductor. Cytop^TM (Cyclic Transparent Optical Polymer) is easy to be used and can be deposited in air from solution. It is highly hydrophobic and has a very low permittivity of ∈_i = 2.1 - 2.2. Moreover, the material is a good electrical insulator with a very high dielectric breakdown field. Its passive surface leads to extremely stable field-effect transistors with a high field-effect mobility, an outstanding subthreshold swing as low as 0.75 nFV/(decade cm²) and a near zero onset voltage. Of particular significance is the resistance of the devices against long-term gate bias stress. Oligomeric organic semiconductors can have a very high electrical stability when combined with a suitable gate dielectric. Cytop^TM is an ideal gate dielectric for organic electronics and it seems very likely that the material leads to outstanding transistors in combination with many small molecule organic semiconductors.

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