Dr. Xiao-Yun Li Profile

Dr. Xiao-Yun Li

associated professor at Tianjin Univ

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Author

Publications (5)

Proceedings Article | 26 February 2010 Paper

Study on temperature characteristic of green photodetector on Si substrate

Xiansong Fu, Suying Yao, Shengcai Zhang, Yunguang Zheng, Pingjuan Niu, Xiaoyun Li, Guanghua Yang

Proceedings Volume 7597, 759722 (2010) https://doi.org/10.1117/12.841621

KEYWORDS: Photodetectors, Silicon, Temperature metrology, Signal to noise ratio, Remote sensing, Semiconductors, Resistance, Sensors, Interference (communication), Diffusion

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Proceedings Article | 17 February 2010 Paper

Light emission from Si LED controlling by a gate voltage and SOS tunneling junction

Wei-Lian Guo, Xiao-Yun Li, Chun-Hong Huang, Xian-Song Fu, Ping-Juan Niu, Guang-Hua Yang

Proceedings Volume 7606, 760619 (2010) https://doi.org/10.1117/12.839927

KEYWORDS: Silicon, Light emitting diodes, Transistors, CMOS technology, Standards development, Microelectronics, Light, Oxides, Aluminum, Infrared radiation

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Proceedings Article | 21 December 2007 Paper

An astable multivibrator formed by a novel NDRHBT

Pingjuan Niu, Weilian Guo, Xin Yu, Xiaoyun Li, Shilin Zhang, Haitao Qi, Changyun Miao, Xiaoli Wang, Wei Wang

Proceedings Volume 6798, 679813 (2007) https://doi.org/10.1117/12.755007

KEYWORDS: Resistance, Modulation, Diodes, Etching, Silicon, Frequency modulation, Inductance, Digital electronics, Power supplies, Gallium arsenide

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Proceedings Article | 28 February 2005 Paper

Simulation of bipolar/MOSFET hybrid mode transistor with Si/GeSi heterojunction base

Wei-Lian Guo, Ping-Juan Niu, Xiao-Yun Li, Lu-Hong Mao

Proceedings Volume 5649, (2005) https://doi.org/10.1117/12.582331

KEYWORDS: Transistors, Heterojunctions, Field effect transistors, Germanium, Surgery, Device simulation, Silicon, Interfaces, Diffusion, Doping

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Proceedings Article | 30 March 2004 Paper

InGaP/GaAs HBT grown by solid-source molecular-beam epitaxy with a GaP decomposition source

PingJuan Niu, Haiyang Hu, Xunzhong Shang, Shudong Wu, Weilian Guo, Chang-yun Miao, Xiaoyun Li, Zhe Xu, Dan Qu

Proceedings Volume 5274, (2004) https://doi.org/10.1117/12.530182

KEYWORDS: Indium gallium phosphide, Gallium arsenide, Heterojunctions, Gallium, Silicon, Epitaxy, Diffusion, Transistors, Luminescence, X-ray diffraction

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