Patterning of contact hole using KrF lithography system for the sub 90nm technology node is one of the most
challenging tasks. Contact hole pattern can be printed using Off-Axis Illumination(OAI) such as dipole or Quasar or
Quadrupole at KrF lithography system. However this condition usually offer poor image contrast and poor Depth Of
Focus(DOF), especially isolated contact hole. Sub-resolution assist features (SRAF) have been shown to provide
significant process window enhancement and across chip CD variation reduction. The insertion of SRAF in a contact
design is mostly done using rule based scripting. However the rule based SRAF strategy that has been followed
historically is not always able to increase the process window of these 'forbidden pitches' sufficiently to allow
sustainable manufacturing. Especially in case of random contact hole, rule-based SRAF placement is almost impossible
task. We have used an inverse lithography technique to treat random contact hole.
In this paper we proved the impact of SRAF configuration. Inverse lithography technique was successfully used to treat
random contact holes. It is also shown that the experimental data are easily predicted by calibrating aerial image
simulation results. Finally, a methodology for optimizing SRAF rules using inverse lithography technology is described.
As a conclusion, we suggest methodology to set up optimum SRAF configuration with rule and inverse lithography
technology.
It is well known in the industry that the technology nodes from 30nm and below will require model based SRAF / OPC
for critical layers to meet production required process windows. Since the seminal paper by Saleh and Sayegh[1][2]
thirty years ago, the idea of using inverse methods to solve mask layout problems has been receiving increasing attention
as design sizes have been steadily shrinking. ILT in its present form represents an attempt to construct the inverse
solution to a constrained problem where the constraints are all possible phenomena which can be simulated, including:
DOF, sidelobes, MRC, MEEF, EL, shot-count, and other effects. Given current manufacturing constraints and process
window requirements, inverse solutions must use all possible degrees of freedom to synthesize a mask.
Various forms of inverse solutions differ greatly with respect to lithographic performance and mask complexity. Factors
responsible for their differences include composition of the cost function that is minimized, constraints applied during
optimization to ensure MRC compliance and limit complexity, and the data structure used to represent mask patterns. In
this paper we describe the level set method to represent mask patterns, which allows the necessary degrees of freedom
for required lithographic performance, and show how to derive Manhattan mask patterns from it, which can be
manufactured with controllable complexity and limited shot-counts. We will demonstrate how full chip ILT masks can
control e-beam write-time to the level comparable to traditional OPC masks, providing a solution with maximized
lithographic performance and manageable cost of ownership that is vital to sub-30nm node IC manufacturing.
For low k1 lithography the resolution of critical patterns on large designs can require advanced resolution enhancement
techniques for masks including scattering bars, complicated mask edge segmentation and placement, etc. Often only a
portion of a large layout will need this sophisticated mask design (the hotspot), with the remainder of layout being
relatively simple for OPC methods to correct. In this paper we show how inverse lithography technology (ILT) can be
used to correct selected regions of a large design after standard OPC has been used to correct the simple portions of the
layout.
The hotspot approach allows a computationally intensive ILT to be used in a limited way to correct the most difficult
portions of a design. We will discuss the most important issues such as: model matching between ILT and OPC
corrections; transition region corrections near the ILT and OPC boundary region; mask complexity; total combined
runtime. We will show both simulated and actual wafer lithographic improvements in the hotspot regions.
For semiconductor IC manufacturing at sub-30nm and beyond, aggressive SRAFs are necessary to ensure sufficient
process window and yield. Models used for full chip Inverse Lithography Technology (ILT) or OPC with aggressive
SRAFs must predict both CDs and sidelobes accurately. Empirical models are traditionally designed to fit SEMmeasured
CDs, but may not extrapolate accurately enough for patterns not included in their calibration. This is
particularly important when using aggressive SRAFs, because adjusting an empirical parameter to improve fit to CDSEM
measurements of calibration patterns may worsen the model's ability to predict sidelobes reliably. Proper choice of
the physical phenomena to include in the model can improve its ability to predict sidelobes as well as CDs of critical
patterns on real design layouts. In the work presented here, we examine the effects of modeling certain chemical
processes in resist. We compare how a model used for ILT fits SEM CD measurements and predicts sidelobes for
patterns with aggressive SRAFs, with and without these physically-based modeling features. In addition to statistics
from fits to the calibration data, the comparison includes hot-spot checks performed with independent OPC verification
software, and SEM measurements of on-chip CD variation using masks created with ILT.
Patterning of contact holes using KrF lithography system is one of the most challenging tasks for the sub-90nm
technology node,. Contact hole patterns can be printed with a KrF lithography system using Off-Axis Illumination (OAI)
such as Quasar or Quadrupole. However, such a source usually offers poor image contrast and poor depth of focus
(DOF), especially for isolated contact holes. In addition to image contrast and DOF, circularity of hole shape is also an
important parameter for device performance. Sub-resolution assist features (SRAF) can be used to improve the image
contrast, DOF and circularity for isolated contact holes. Application of SRAFs, modifies the intensity profile of isolated
features to be more like dense ones, improving the focal response of the isolated feature. The insertion of SRAFs in a
contact design is most commonly done using rule-based scripting, where the initial rules for configuring the SRAFs are
derived using a simulation tool to determining the distance of assist features to main feature, and the size and number of
assist features to be used. However in the case of random contact holes, rule-based SRAF placement is a nearly
impossible task.
To address this problem, an inverse lithography technique was successfully used to treat random contact holes. The
impact of SRAF configuration on pattern profile, especially circularity and process margin, is demonstrated. It is also
shown that the experimental data are easily predicted by calibrating aerial image simulation results. Finally, a
methodology for optimizing SRAF rules using inverse lithography technology is described.
Assessing an empirical model for ILT or OPC on a full-chip scale is a non-trivial task because the model's fit to
calibration input data must be balanced against its robust prediction on wafer prints. When a model does not fit the
calibration measurements well, we face the difficult choice between readjusting model parameters and re-measuring
wafer CDs of calibration patterns. On the other hand, when a model does fit very well, we will still likely have the
nagging suspicion that an overfitting might have occurred. Here we define a few objective and quantitative methods for
model assessment. Both theoretical foundation and practical use are presented.
In this paper, the stacked pupil shift operator approach to partially coherent imaging as first introduced by
Yamazoe1 has been further pursued and investigated with a focus on its practical performances in lithographic
simulations.. The stacked pupil shift operator P is a singular matrix obtained by stacking pupil functions that
are shifted according to the illumination condition. The transmission cross coefficient (TCC) matrix can then
be constructed in an elegant fashion as TCC = PP. The new development presented in this paper utilizes
a matrix multiplication technique to speed up the computation of TCC matrix by tenfolds on average. This
enables fast and accurate generation of TCC kernels for complicated illumination source shapes where a large
number of source points are required to obtain good accuracy. The eigenvalue decomposition is applied to the
TCC matrix instead of the stacked pupil shift operator P so that mask and resist proximity effects can easily be
included in the effective TCC kernels.
Patterning of contact holes using KrF lithography system is one of the most challenging tasks for the sub-90nm
technology node,. Contact hole patterns can be printed with a KrF lithography system using Off-Axis Illumination (OAI)
such as Quasar or Quadrupole. However, such a source usually offers poor image contrast and poor depth of focus
(DOF), especially for isolated contact holes. In addition to image contrast and DOF, circularity of hole shape is also an
important parameter for device performance. Sub-resolution assist features (SRAF) can be used to improve the image
contrast, DOF and circularity for isolated contact holes. Application of SRAFs, modifies the intensity profile of isolated
features to be more like dense ones, improving the focal response of the isolated feature. The insertion of SRAFs in a
contact design is most commonly done using rule-based scripting, where the initial rules for configuring the SRAFs are
derived using a simulation tool to determining the distance of assist features to main feature, and the size and number of
assist features to be used.. However in the case of random contact holes, rule-based SRAF placement is a nearly
impossible task.
To address this problem, an inverse lithography technique was successfully used to treat random contact holes. The
impact of SRAF configuration on pattern profile, especially circularity and process margin, is demonstrated. It is also
shown that the experimental data are easily predicted by calibrating aerial image simulation results. Finally, a
methodology for optimizing SRAF rules using inverse lithography technology is described.
An accurately predictive process model is of utmost importance to the traditional Optical Proximity Correction (OPC),
the leading-edge Inverse Lithography Technology (ILT), or other simulation software for IC manufacturing. There are
many parameters and methods in constructing and calibrating a model. But it is difficult to obtain a good empirical
model, partly because the assessment of the final result is lacking in terms of quantitative and objective metrics. We set
out to define certain practical guidelines, e.g. Model Effectiveness Standard Index (MESI), for analyzing parameter
uncertainty and estimating simulation uncertainty of an empirical model, so that we know what to choose among many
similar candidates. The discussion is framed in the estimation theory of statistics.
Ischemic stroke accounts for nearly 80% of all stroke cases. Although proton diffusion and perfusion magnetic
resonance imaging (MRI) are the gold standards in ischemic stroke diagnostics, the use of hyperpolarized 129Xe MRI has
a potential role to contribute to the diagnostic picture. The highly lipophilic hyperpolarized 129Xe can be non-invasively
delivered via inhalation into the lungs where it is dissolved into the blood and delivered to other organs such as the brain.
As such, we expect hyperpolarized 129Xe to act as a perfusion tracer which will result in a signal deficit in areas of blood
deprived tissue. In this work, we present imaging results from an animal model of transient ischemic stroke
characterized through 129Xe MRI. In this model, a suture is used to occlude the middle cerebral artery (MCA) in the rat
brain, thus causing an ischemic event. After a period of MCA occlusion, the suture can then be removed to reperfuse the
ischemic area. During the ischemic phase of the stroke, a signal void was observed in the MCA territory; which was
subsequently restored by normal 129Xe MRI signal once perfusion was reinstated. Further, a higher resolution one-dimensional
chemical shift image shows a sharp signal drop in the area of ischemia. Validation of ischemic damage was
shown through both proton diffusion-weighted MRI (DWI) and by 2,3,5-triphenyltetrazoliumchloride (TTC) staining.
The results show the potential of 129Xe to act as a perfusion tracer; information that may add to the diagnostic and
prognostic utility of the clinical picture of stroke.
As photomask critical dimensions shrink significantly below the exposure wavelength and the angle of off-axis
illumination increases, the use of Kirchhoff thin mask approximation cannot capture diffraction and polarization effects
that occur at a topographical mask surface. Such approximation errors result in inaccurate models that lead to poor
prediction for image simulation, which can waste time and money during lithographic process development cycle. The
real effects of a thick mask can be simulated using finite difference time domain (FDTD) electromagnetic (EM) field
calculations, or be better approximated with less error using such techniques such as boundary layer or various Fourier
transformation techniques.
The number of tunable parameters increases dramatically as we push forward to the next node of hyper-NA immersion
lithography. It is very important to keep the lithographic process model calibration time under control, and its end result
insensitive to either the starting point in the parameter space or the noise in the measurement data. For minimizing the
least-squares error of a multivariate non-linear system, the industry standard is the Levenberg-Marquardt algorithm. We
describe a distributed computing technique that is natural to the algorithm, and easy to implement in a cluster of
computers. Applying this technique to calibrating lithographic process model, we can achieve robust optimization results
in nearly constant calibration time.
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