By adopting the vacuum sealed-ampoule technique, P-type doping of Zn elements in the lattice-mismatched NInAs0.6P0.4/i-In0.8Ga0.2As/N-InP heterostructure material was achieved to form PN junction. The diffusion mechanism of Zn in the material was studied using secondary ion mass spectrometry (SIMS) and scanning capacitance microscopy (SCM). Furthermore, the temperature-dependent photoelectric properties were investigated after the short-wave infrared (SWIR) detector was fabricated and packaged in a vacuum Dewar. The results indicate that the doped Zn elements in the material are not fully activated, leading to a PN junction depth smaller than the diffusion depth, and rapid thermal processing (RTP) does not affect the PN junction depth. The cutoff long-wavelength of the detector at 273K is 2.53 μm, and the peak detectivity reaches a peak value of 2.42×1011 cm•Hz1/2/W at 133K.
Based on collection effect of photogenerated carrier, the front-illuminated planar type InGaAs short-wave infrared (SWIR) detectors were fabricated by using N-InP/i-In0.53Ga0.47As/N-InP double-hetero structure materials. The series of detectors with the same dimension of 200μm×200μm contain several lateral collection regions and the width of each collection region is 15μm. The photoelectric characteristics of the photoresponse, I-V, spectral response and detectability of detectors with the lateral collection structure and normal structure were further analyzed. The build-in electrical field could effectively collect the electron/hole pairs generated in the lateral collection regions, so the photoresponse of lateral collection detector at 296 K is quite uniform by the laser beam induced current (LBIC) technology. Furthermore, the average peak detectivity and the density of dark current of the detectors with lateral collection structure reached 2.90× 1012 cm·Hz1/2/W and 3.94 nA/cm2 at -0.1 V respectively. It turns out that the lateral collection structure could effectively improve the dark current properties compared with the normal structure.
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