In response to the high resolution requirements of EBAPS digital low light imaging devices in military and aerospace fields, the spatial modulation transfer function is an objective method to evaluate the resolution of liner photoelectric imaging system. on the basis of the existing GaAs photocathode and CMOS structure, a five-part MTF model of EBAPS devices were constructed using modulation transfer function theory. It was proposed that the electron dispersion and scattering characteristics during electron transmission are the main factors causing the decrease in resolution. We studied the dispersion characteristics of near-field photoelectrons based on the physical model of near-field focusing. Based on the theory of low energy electron solid interaction, we combined Monte Carlo simulation methods to derive and simulate the electron transit and scattering characteristics of the passivation layer. Based on the theory of electron diffusion and drift in semiconductors, We constructed a CMOS electron transport model to analyze the electron transport diffusion characteristics. Finally, the electron dispersion and scattering mechanism of EBAPS is revealed, and the MTF model of EBAPS is established, which is composed of near-field dispersion, CMOS transport diffusion and CMOS chip. Moreover, by optimizing the proximity process parameters to realize the device preparation, the ultimate resolution of EBAPS was increased from 22lp/mm to 32lp/mm. It is pointed out that backscatter dispersion of incident electrons on the CMOS surface is a key method to further improve resolution. This has important guiding significance for the future development of high-resolution EBAPS devices.
KEYWORDS: Image enhancement, Color imaging, Optical filters, Light sources and illumination, High dynamic range imaging, Image processing, Image intensifiers
Low-light-level (LLL) real-time color imaging technology plays an important role in military reconnaissance, scientific detection, security monitoring and assisted driving, and is one of the key technologies developed domestically and internationally. When the ambient light is insufficient, the imaging effect of the human eye is reduced. In order to enhance human eye recognition ability under low illumination and obtain imaging effects with real color, high resolution and high sensitivity, more and more teams are committed to researching LLL real-time color imaging technology. Firstly, the impact of human visual limitation and physical constraint on LLL real-time color imaging is analyzed in this paper. Then, the current research progress of LLL real-time color imaging technology is introduced. Finally, according to the future research direction, the problems and key methods that need to be further studied are proposed.
As the core component of the electron-bombarded active pixel sensor (EBAPS), the electron-sensitive CMOS (e-CMOS) can be prepared by thinning the surface layer of back-illuminated CMOS (BSI-CMOS), which was named electron sensitization. Due to the dramatic increase of dark current during the electron sensitization of BSI-CMOS, the signal-to-noise ratio and gain characteristics of the prepared EBAPS would be reduced. To solve this problem, this paper proposed a passivation strategy of SiO2 grown by plasma-enhanced chemical vapor deposition (PECVD) to inhibit surface defects, and the optimal SiO2 film thickness was explored through process optimization and electron bombardment system testing. As a result, the dark current was effectively suppressed (~50 e-1/s/pix), and a lower electron-sensitive threshold voltage of 550V was realized. Moreover, the defect states density of SiO2 deposited by PECVD was lower compared to Al2O3, which resulted from the more matched lattice coefficient of SiO2. Finally, EBAPS based on SiO2 passivated e-CMOS was realized, and high-quality imaging was successfully achieved at 1×10-4lx illumination. The above results showed that the SiO2 grown by PECVD can effectively suppress dark current at a thickness of ~5 nm, and reduce the electron-sensitive threshold voltage to 550 V, which provided technical support for the subsequent development of EBAPS devices with high gain and low noise.
Electron Bombardment Active Pixel Sensor (EBAPS) can work in photosensitive mode and electrical sensitive mode due to the special doping mode of CMOS. In both operating modes, after the target signal passes through the photoelectric conversion, gain and readout process of the EBAPS device, the readout signal needs to exceed the noise generated by the device to ensure the distinguishable output image. However, in the process of conversion and multiplication of the target signal, noise will inevitably be introduced. The noise will be amplified along with the signal, causing distortion or attenuation of the original signal, thus interfering with the quality of the output image and affecting human observation. Therefore, it is necessary to study the noise characteristics of EBAPS as a key factor affecting the imaging quality. For the development of high-performance EBAPS devices, this paper focuses on the noise characteristics of detection and imaging under different operating modes. By analyzing the working principle of EBAPS devices in different working modes, the noise sources that affect the imaging quality are obtained. In photosensitive mode, the noise of EBAPS is consistent with that of ordinary CMOS image sensor. These noises are mainly affected by CMOS process level, ambient temperature, working time and other factors, and can usually be removed by image processing algorithms. In the electric sensitive mode, the noise of EBAPS mainly comes from GaAs photocathode and the electron multiplication process of CMOS. These noises can be suppressed by reducing the working temperature, improving the surface defects and cleanliness during the chip preparation, and improving the doping process of the substrate. According to the noise generation mechanism, the noise suppression methods are proposed to obtain a high SNR digital output image. The above research provides some references for the following research on noise characteristics and noise reduction methods of digital low light level devices.
KEYWORDS: Optical filters, Technology, Night vision, Image filtering, Electron multiplying charge coupled devices, Design and modelling, Cameras, Image processing, Digital filtering, Color imaging
Advanced night vision technology can realize the "one-way transparent" situation to the enemy in night battle, which plays a decisive role in local confrontation. However, traditional high vacuum and low light level night vision devices based on analog signals have inherent functional limitations of not being able to share in real time and enhance processing. Meanwhile, in order to give full play to the visual characteristics of human eyes, new digital and colorized night vision imaging devices have become the mainstream direction of current development. Based on the basic principle of low light level devices, this paper summarizes the research of digital color low light level technology and makes technical prospects.
Heat cleaning is one of the most widely used methods for preparing GaAs photocathode. The GaAs photocathode obtained by heat cleaning can obtain high sensitivity. The temperature, stress and strain of GaAs photocathode during heat cleaning significantly affect the activation sensitivity and resolution. However, it is very difficult to accurately measure the temperature, stress and strain of GaAs photocathode during heat cleaning. Therefore, it is of great significance to simulate the temperature, stress and strain of GaAs photocathode during heat cleaning. In this study, the mathematical models of GaAs photocathode, glass, fixture and heating apparatus during heat cleaning were developed. Then, coupled with thermal radiation and heat conduction, the transient temperature distributions of GaAs photocathode, glass, fixture and heating apparatus during heat cleaning were obtained. Finally, the stress and strain of photocathode, glass, and fixture were investigated by coupling heat transfer and mechanical properties.
KEYWORDS: Image processing, Image enhancement, Image information entropy, Night vision, Digital image processing, Digital Light Processing, Detection and tracking algorithms, Visualization, Optoelectronics, Infrared technology
When the classical gray stretching algorithm is applied in digital low light level devices, it cannot meet the requirements of illumination environment change in large dynamic range, and the image processed under very low illumination or very high illumination is prone to the loss of target details, an adaptive gray stretching algorithm suitable for digital low light level devices is designed. The algorithm adds the variable of the brightness value of the original image information collected by the digital low light level device to the gray stretching transformation matrix, deduces the current environmental illuminance value according to the transformation of the brightness value, timely adjusts the relevant parameters in the gray stretching calculation matrix according to the environmental illuminance value, and obtains the gray stretching transformation matrix suitable for different image features under different illuminance environments, In order to meet the requirement that digital low light level devices should be suitable for the change of illumination environment in a large dynamic range. This paper also compares the adaptive algorithm with the classical algorithm, and gives the test results. At the end of the paper, the operation efficiency of the algorithm is tested to verify that the algorithm can meet the requirements of real-time image processing speed of digital low light level devices.
Aiming at the problem of the lack of comprehensive and objective evaluation methods for near-infrared and low-light-level multi-band fusion images, this paper proposes a multi-dimensional fusion image quality evaluation model that conforms to the interpretation habits of the human visual system. Firstly, the multi-source fusion image quality of low illumination CMOS, ICCD, EBAPS devices and near-infrared InGaAs detector is subjectively evaluated. Secondly, 14 classical evaluation indexes such as information entropy, mean gradient, mutual information and structure similarity are combined. The parameters of each index are dynamically adjusted, and finally an objective evaluation model is established based on the linear regression model. The SROCC, KROCC, PLCC and RMSE values of the optimized objective evaluation model and subjective evaluation score are 0.88, 0.72, 0.89 and 0.38, respectively, indicating that the accuracy and stability evaluation effect of the objective model is better. It solves the limitation of single factor evaluation index and realizes the comprehensive and objective quality evaluation of multi-source detector fusion image, which provides theoretical support and decision basis for the selection of night vision camera in complex illumination environment and the data fusion of multi-detector in low illumination condition. < <
The color information in the true color low light level night vision image is the true restoration of the visible light color information reflected by the scene itself. Compared with the gray-scale level image and the false color image, it can obtain more abundant image information, which is more in line with the observation habit of the human eye and reduce the fatigue of the human eye. Under the background of information war, aiming at the multi-functional, all-weather, information sharing and transmission characteristics of new type of low light level equipment for single soldier, the requirements of digitalization, high integration and low power consumption are put forward for the true color low light level night vision technology. In this paper, the research progress of real color digital night vision technology is reviewed: firstly, the classification of color night vision technology is introduced; then, the foreign true color digital night vision products represented by French photonis company, Japanese komamura company and American SPI Infrared company are summarized, included the technology route and development level of the true color digital night vision technology; finally, three issues that need to be considered in the realization of low light level night vision true color technology are proposed.
In view of the attenuation of performance index of self-developed EBAPS detector principle sample with the increase of working time and working temperature, a test method is designed from the angle of dark current noise and working temperature change, and the corresponding relationship between dark current and working temperature of EBAPS device is tested. Because EBAPS detector combines the characteristics of solid-state and vacuum micro-optical devices, it inherits the characteristics of dark current of CMOS chip changing with temperature. With the increase of temperature, dark current of CMOS chip increases rapidly. The rise of dark current will directly affect the equivalent background illumination of EBAPS detector. If the effective signal received by the detector is lower than the dark current noise signal at low illumination, that is, the effective signal is lower than the equivalent background illumination; the effective signal will be obscured in the noise signal, leading to the detector not working properly. In view of the characteristics of EBAPS detector, the test and calculation are also carried out. The data relations and change curves between the operating temperature, dark current and equivalent background illumination of EBAPS device are given. At the end of the paper, methods and ways to optimize the imaging performance of EBAPS detectors are presented, such as image processing algorithm, reducing the power consumption of readout circuit, and optimizing the dark current suppression process of EBAPS devices.
After more than 50 years of development, CMOS image sensor has become the most mainstream image sensor. At present, the most used solid-state imaging devices directly image optical signals through the internal photoelectric effect, while the EBCMOS(electron bombardment CMOS) is more popular in the military field. In order to achieve low illumination and high quality image detector, people put forward higher requirements for the minimum operating illumination, fixed pattern noise, dynamic working range and other indicators of CMOS image sensor, and dark current is an important factor affecting these indicators. There are many literatures about the research of dark current in CMOS image sensor, but there is no systematic report on the research of dark current in CMOS image sensor. This paper systematically summarizes the research situation of dark current in CMOS image sensor. In this paper, the mechanism of dark current generation of CMOS image sensor is summarized firstly. Secondly, the influence of structure design, fabrication process and working environment on the dark current index of CMOS image sensor is summarized respectively, and the research situation of dark current compensation method is summarized again. Finally, combining with the generation mechanism of dark current of CMOS image sensor, the formation mechanism and influencing factors of dark current of new proposed electron bombardment CMOS(EBCMOS) image detector are analyzed.
Wide dynamic cameras are widely used due to their excellent details capture ability in high contrast environments. This paper designed a hand-held wide dynamic camera with the NSC1105 image sensor. This camera is based on FPGA hardware platform for image acquisition, data conversion, image processing and OLED display. The miniaturized design realizes the hand-held of the camera. The experimental result shows that the hand-held wide dynamic camera can clearly distinguish the target in strong contrast environment, with the effective resolution of 1280*1024@52fps, and the detailed information collection ability is excellent.
Based on the study of working principle and making process of 4-transistor Backside-illuminated CMOS (4T BSI-CMOS), Signal-to-noise ratio (SNR) model are established and quantitative calculating formula is derived. In addition, factors of influencing SNR are analyzed. Two methods are presented to enhance the SNR, the one is optimizing structure of 4T BSI-CMOS image sensor to strengthen the signal and the other one is correlated double sampling to decrease fixed pattern noise (FPN). These results serve as useful guidelines to enhance the SNR of 4T BSI-CMOS and improve the image quality.
The GaAs photocathode has widely been used in optoelectronic devices such as image intensifiers, photomultiplier tubes, but these devices is inevitable to withstand a variety of mechanical vibration. In order to study the mechanical vibration impact on the photoemission performance of GaAs photocathode, GaAs photocathode image intensifier is researched in this paper. The spectral response of the GaAs photocathode before and after 5~55Hz scan frequency, 14Hz, 33Hz, 52Hz stay frequency, 5~60Hz scan frequency mechanical vibration respectively was tested, then the parameter of photocathode was calculated by MATLAB software according to quantum efficiency formula, the quantum efficiency curve were fitted. The results show that surface escape probability is increased after photocathode is subjected to mechanical vibration, so that its photoemission performance will be improved. We think this phenomenon is due to the GaAs photocathode surface Cs-O reconstruction. This finding provided a new method to enhance the photoemission performance of photocathode.
The photocurrent attenuation of GaAs photocathode within one hour after activation under three different vacuum pressure (5×10-9Pa, 5×10-8Pa, 5×10-7Pa) were recorded by automatically activated monitor. The results show that: the photocurrent quickly descend in the beginning and then descend linearly at a low slope; the amplitude of the quickly descending area were 10%, 14.74% and 36%separately, with the respective slope of the linear descending area were -0.00653, -0.01132and -0.02. Three samples’ gas components of H2, CH4, CO, H2O, O2, CO2 etc under the same vacuum pressure (5×10-8Pa)during photocurrent attenuation were collected by quadrupole mass spectrometer. By comparing the gas components content and the attenuation law of the photocurrent, it has been found that H2O and H2 had a greater impact on the stability of GaAs photocathode in the ultra-high vacuum environment and H2O was the predominant effect. This paper has important guiding significance and reference value in studying the stability of GaAs photocathode and the improvement of semiconductor photocathode process.
In this article, in order to accurately measure the spectral transmittance of imaging lens used in InGaAs imaging apparatus, a simple device, which spectrum ranges from 400 nanometers to 2000 nanometers, based on double grating monochromator and self-collimating has been founded by using stable shortwave infrared radiant source, accurate double grating monochromator and telescope, stable silicon detector and cooled HgCdTe infrared detector. An imaging lens whose spectral transmittance has been known is measured on it. Comparing the test results to known data provided by manufacture, it is shown that the testing device founded in this article is competent to measure spectral transmittance of shortwave infrared imaging lens and which max relative deviation is no more than ±2.5%. It is worthwhile for selecting InGaAs image intensifier assembly and evaluating the quality of shortwave infrared imaging lens.
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