The Climate Absolute Refractivity and Reflectance Observatory (CLARREO) Pathfinder (CPF) mission is being developed to demonstrate SI-traceable retrievals of reflectance at unprecedented accuracies for global satellite observations. An Independent Calibration of the CPF sensor using the Goddard Laser for Absolute Measurement of Radiance (GLAMR) is planned to allow validation of CPF accuracies. GLAMR is a detector-based calibration system relies on a set of NIST-calibrated transfer radiometers to assess the spectral radiance from the GLAMR sphere source to better than 0.3 % (k=2). The current work describes the calibration of the Solar, Lunar Absolute Reflectance Imaging Spectroradiometer (SOLARIS) that was originally developed as a calibration demonstration system for the CLARREO mission and is now being used to assess the independent calibration being developed for CPF. The methodology for the radiometric calibration of SOLARIS is presented as well as results from the GLAMR-based calibration of SOLARIS. The portability of SOLARIS makes it capable of collecting field measurements of earth scenes and direct solar and lunar irradiance similar to those expected during the on-orbit operation of the CPF sensor. Results of SOLARIS field measurements are presented. The use of SOLARIS in this effort also allows the testing protocols for GLAMR to be improved and the field measurements by SOLARIS build confidence in the error budget for GLAMR calibrations. Results are compared to accepted solar irradiance models to demonstrate accuracy values giving confidence in the error budget for the CLARREO reflectance retrieval.
A CLARREO (Climate Absolute Radiance and Refractivity Observatory) Pathfinder (CPF) mission has been funded to demonstrate retrieval of SI-traceable spectral reflectance with absolute uncertainty <0.3% (k=1). The mission consists of a Reflected Solar spectrometer that will be hosted on the International Space Station (ISS) in the 2023 timeframe and rely on a ratioing radiometer approach to retrieve the unprecedented accuracy. Demonstrating that the accuracy is achieved through an Independent Calibration effort similar in philosophy to the efforts in metrology laboratories relying on multiple, independent measurements to improve credibility for a sensor’s absolute and relative uncertainty error budgets. These measurements use different traceability paths and multiple instrument approaches and CPF’s Independent Calibration will be similar in this regard. The Independent Calibration relies on a pre-launch absolute radiometric calibration obtained from additional testing done after instrument thermal-vacuum (TVAC) testing. The added radiometric calibration is combined with a high fidelity instrument model to provide an on-orbit radiometric calibration independent from the ratioing radiometer approach. The current work describes the post-TVAC testing portion of the CPF Independent Calibration Plan and the Independent Model Development as well as planned on-orbit Evaluation of the Independent Calibration.
Temperature dependent measurements of carrier recombination rates using a time-resolved pump-probe technique are reported for mid-wave infrared InAs/InAsSb type-2 superlattices (T2SLs). By engineering the layer widths and alloy compositions a 16 K band-gap of ~235 ± 10meV was achieved for four doped and five undoped T2SLs. Carrier lifetimes were determined by fitting lifetime models of Shockley-Read-Hall (SRH), radiative, and Auger recombination processes simultaneously to the temperature and excess carrier density dependent data. The contribution of each recombination process at a given temperature is identified and the total lifetime is determined over a range of excess carrier densities. The minority carrier and Auger lifetimes were observed to increase with increasing antimony content and decreasing layer thickness for the undoped T2SLs. It is hypothesized that a reduction in SRH recombination centers or a shift in the SRH defect energy relative to the T2SL band edges is the cause of this increase in the SRH minority carrier lifetime. The lower Auger coefficients are attributed to a reduced number of final Auger states in the SL samples with greater antimony content. An Auger limited minority carrier lifetime is observed for the doped T2SLs, and it is found to be a factor of ten shorter than for undoped T2SLs. The Auger rates for all the InAs/InAsSb T2SLs were significantly larger than those previously reported for InAs/GaSb T2SLs.
The quantum dot infrared photodetector is an emerging technology for advanced imaging. Multi-color imaging
technologies are favored as they extend the boundary of applications of the device. We report multi-spectral
performance of MBE grown InGaAs/GaAs (device A) and InAs/GaAs (device B) based photodetector with In0.21Al0.21Ga0.58As capping at 77K. Spectral response measurement of device A shows the presence of a strong photoresponse at 10.2μm. Device B exhibits a four color response (5.7, 9.0, 14.5, 17 and 20 μm) over a broad range (5-20μm) at very low bias voltage.
The Self-assembled InGaAs/GaAs quantum dot infrared detectors (QDIPs) have emerged as a promising technology in
many applications such as missile tracking, night vision, medical diagnosis, environmental monitoring etc. On account
of the 3-D confinement of carriers in QDs, a number of advantages arise over the QW counterparts. Here we report a
quaternary (InAlGaAs) capped In(Ga)As/GaAs QDIP. The samples were grown on a semi-insulating (001) GaAs
substrate by solid source molecular beam epitaxy (MBE), and the dots were then capped with a combination of 30A
quaternary (In0.21Al0.21Ga0.58As) and 500Å of GaAs layer. Both the QD layer and the combination capping were repeated
for 35 periods. The device was fabricated by conventional photolithography, ICP etching and metal evaporation
technique. XTEM image of the sample depicted nice stacking of defect free quantum dot layers. The dark current is
symmetric both for positive and negative bias with a low dark current density of 4.32x10-6A/cm2 at 77K and 1.6 x10
-3A/cm2 at 200K at a bias of 2V. The high intense peak response observed at 10.2μm, with a very narrow spectral width
(▵λ/λ) of 14% (▵λ is the FWHM), is probably due to bound-to-bound transition of carriers in the QDs. A very high
responsivity of 2.16 A/W was measured at a bias of -0.40 Volt bias. The highest value of detectivity is measured to be
~1011 cm.Hz1/2/W at a bias of 0.3V.
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