Dr. Yijian Chen Profile

Dr. Yijian Chen

Research Scientist at Westlake Univ

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Author

Publications (40)

Proceedings Article | 9 April 2024 Presentation + Paper

Mandrel/spacer engineering-based patterning and metallization incorporating metal layer division and rigorously self-aligned vias and cuts (SAVC)

Yijian Chen, Xinzuo Sun, Chunyan Song, Kang Wang, Jie Cao, Xijun Li

Proceedings Volume 12958, 1295802 (2024) https://doi.org/10.1117/12.3010597

KEYWORDS: Ruthenium, Nanowires, Logic devices, Back end of line

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In this paper, we first present a brief review of the advanced-node logic device technology development and its key bottleneck/component processes using the existing lithographic capabilities. It is shown to be feasible to evolve into the GAA era with the minimum change of current FinFET process and a minor refining of previously reported Forksheet structure. The concept of hybrid-channel devices is raised which is not only promising for 3D vertical integration, but also offers an optimal tradeoff between device performance and power/leakage. To address the fabrication challenges, a mandrel/spacer engineering based patterning and metallization technology is proposed and its process development results are reported. This patterning & metallization technique can be applied to fabricate advanced logic and SRAM circuits with significantly enhanced pattern density. It is based on the self-aligned multiple patterning (SAMP) wherein either an alternating arrangement of different materials (with high etching selectivity) or multi-color layer decomposition (i.e., splitting of metallization process) is utilized to solve the edge-placement-error (EPE) issue. In particular, we explore various schemes of self-aligned triple patterning (SATP) to identify the potential solution to ensure a satisfactory profile control of the consecutively formed spacers. Moreover, this technique can incorporate rigorously self-aligned vias & cuts (SAVC), and accommodate a metal-layer division (MLD) to split the neighboring metal lines into two vertically staggered layers with their coupling capacitance significantly reduced. The tested metal Ru allows a direct dry etching, which offers a metal recess capability to enable an alternating-material coverage of neighboring metal wires by two different hard masks such that a selective etching can be applied to form rigorously self-aligned vias. Our early-stage process development is focused on SATP process optimization, fabrication of two simplified grating structures, material screening for appropriate etching selectivity, and metal-layer-division realization. Potential processing challenges such as Ru trench-filling quality and scaling issues of SAVC technology for advanced IC manufacturing will also be discussed.

Proceedings Article | 9 April 2024 Poster + Paper

Past progress, current status, and future perspective of digital EUV lithography for high-resolution semiconductor manufacturing

Yijian Chen, Chunyan Song, Junhua Gao, Xijun Li

Proceedings Volume 12956, 129560O (2024) https://doi.org/10.1117/12.3010567

KEYWORDS: Extreme ultraviolet lithography, Micromirrors, Extreme ultraviolet, Printing, Lithography

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Proceedings Article | 22 March 2016 Paper

A paradigm shift in patterning foundation from frequency multiplication to edge-placement accuracy: a novel processing solution by selective etching and alternating-material self-aligned multiple patterning

Ting Han, Hongyi Liu, Yijian Chen

Proceedings Volume 9777, 977718 (2016) https://doi.org/10.1117/12.2218874

KEYWORDS: Process control, Optical lithography, Etching, Lithography, Probability theory, Photomasks, Failure analysis, Phase only filters, Yield improvement, Critical dimension metrology, Error analysis

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Proceedings Article | 16 March 2016 Paper

Layout decomposition and synthesis for a modular technology to solve the edge-placement challenges by combining selective etching, direct stitching, and alternating-material self-aligned multiple patterning processes

Hongyi Liu, Ting Han, Jun Zhou, Yijian Chen

Proceedings Volume 9781, 97810P (2016) https://doi.org/10.1117/12.2219082

KEYWORDS: Optical lithography, Photomasks, Etching, Manufacturing, Design for manufacturability, Metals, Array processing, Printing, Detection and tracking algorithms, Extreme ultraviolet lithography, Lithography, Algorithm development, Cadmium, Extreme ultraviolet, Chemical mechanical planarization

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Proceedings Article | 16 March 2016 Paper

A comparative study on the yield performance of via landing and direct stitching processes for 2D pattern connection

Jun Zhou, Yijian Chen

Proceedings Volume 9781, 97810T (2016) https://doi.org/10.1117/12.2219336

KEYWORDS: Probability theory, Design for manufacturability, Optics manufacturing, Optical lithography, Metals, Critical dimension metrology, Failure analysis, Design for manufacturing, Manufacturing, Yield improvement, Feature extraction, Statistical analysis

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Proceedings Article | 16 March 2016 Paper

Structural design, layout analysis and routing strategy for constructing IC standard cells using emerging 3D vertical MOSFETs

Hongyi Liu, Chuyang Hong, Ting Han, Jun Zhou, Yijian Chen

Proceedings Volume 9781, 978103 (2016) https://doi.org/10.1117/12.2219267

KEYWORDS: Field effect transistors, Metals, Optical lithography, Transistors, Structural design, Standards development, Logic, Nanowires, Gallium arsenide, Electrodes

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Proceedings Article | 16 March 2016 Paper

Impacts of process variability of alternating-material self-aligned multiple patterning on SRAM circuit performance

Ting Han, Chuyang Hong, Qi Cheng, Yijian Chen

Proceedings Volume 9781, 97810E (2016) https://doi.org/10.1117/12.2218992

KEYWORDS: Optical lithography, Device simulation, TCAD, Fabrication, Manufacturing, Lithography, Yield improvement, Line width roughness, Transistors, Visualization

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Proceedings Article | 18 March 2015 Paper

A compact model to predict pillar-edge-roughness effects on 3D vertical nanowire MOSFETs using the perturbation method

Pu Wang, Chuyang Hong, Qi Cheng, Yijian Chen

Proceedings Volume 9427, 94270W (2015) https://doi.org/10.1117/12.2085919

KEYWORDS: 3D modeling, Field effect transistors, TCAD, Instrument modeling, Oxides, Doping, Metrology, 3D metrology, Statistical analysis, Nanowires

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Proceedings Article | 18 March 2015 Paper

Statistical modeling of SRAM yield performance and circuit variability

Qi Cheng, Yijian Chen

Proceedings Volume 9427, 94270M (2015) https://doi.org/10.1117/12.2085844

KEYWORDS: Optical lithography, Failure analysis, Statistical analysis, Line width roughness, TCAD, Circuit switching, Logic, Manufacturing, Data analysis

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Proceedings Article | 18 March 2015 Paper

Breaking through 1D layout limitations and regaining 2D design freedom Part I: 2D layout decomposition and stitching techniques for hybrid optical and self-aligned multiple patterning

Hongyi Liu, Jun Zhou, Yijian Chen

Proceedings Volume 9427, 94270G (2015) https://doi.org/10.1117/12.2085738

KEYWORDS: Optical lithography, Algorithm development, Electron beam lithography, Double patterning technology, Photomasks, Hybrid optics, Detection and tracking algorithms, Etching, Cadmium, Critical dimension metrology

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Proceedings Article | 18 March 2015 Paper

Breaking through 1D layout limitations and regaining 2D design freedom part II: stitching yield modeling and optimization

Jun Zhou, Hongyi Liu, Ting Han, Yijian Chen

Proceedings Volume 9427, 942714 (2015) https://doi.org/10.1117/12.2085898

KEYWORDS: Critical dimension metrology, Optical lithography, Double patterning technology, Yield improvement, Molybdenum, Databases, Data modeling, Optimization (mathematics), Hybrid optics, Performance modeling

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Proceedings Article | 31 March 2014 Paper

Understanding the critical challenges of self-aligned octuple patterning

Ji Yu, Wei Xiao, Weiling Kang, Yijian Chen

Proceedings Volume 9052, 90521P (2014) https://doi.org/10.1117/12.2046094

KEYWORDS: Optical lithography, Etching, Algorithm development, Photomasks, Magnesium, Critical dimension metrology, Back end of line, Feature extraction, Statistical analysis, Carbon

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Proceedings Article | 31 March 2014 Paper

A generalized edge-placement yield model for the cut-hole patterning process

Pan Zhang, Chuyang Hong, Yijian Chen

Proceedings Volume 9052, 90521Q (2014) https://doi.org/10.1117/12.2046437

KEYWORDS: Critical dimension metrology, Phase only filters, Optical lithography, Overlay metrology, Error analysis, Cadmium, Lithography, Yield improvement, Statistical modeling

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Proceedings Article | 28 March 2014 Paper

Benchmarking process integration and layout decomposition of directed self-assembly and self-aligned multiple patterning techniques

Yijian Chen, Jun Zhou, Jun You, Hongyi Liu

Proceedings Volume 9053, 90530B (2014) https://doi.org/10.1117/12.2046085

KEYWORDS: Optical lithography, Photomasks, Algorithm development, Etching, Back end of line, Logic, Amorphous silicon, Manufacturing, Front end of line, Directed self assembly

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Proceedings Article | 28 March 2014 Paper

A frequency multiplication technique based on EUV near-field imaging

Yijian Chen, Yashesh Shroff

Proceedings Volume 9049, 90490D (2014) https://doi.org/10.1117/12.2045880

KEYWORDS: Near field, Extreme ultraviolet, Lithography, Near field optics, Tin, Extreme ultraviolet lithography, Wave propagation, Photomasks, Optical lithography, Critical dimension metrology

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Proceedings Article | 28 March 2014 Paper

A generalized model to predict fin-width roughness induced FinFET device variability using the boundary perturbation method

Qi Cheng, Jun You, Yijian Chen

Proceedings Volume 9053, 90530U (2014) https://doi.org/10.1117/12.2046221

KEYWORDS: TCAD, Instrument modeling, Oxides, Line edge roughness, Silicon, Sodium, Electronics engineering, Computer engineering, Device simulation

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Proceedings Article | 28 March 2014 Paper

A layout decomposition algorithm for self-aligned multiple patterning

Jun You, Hongyi Liu, Yijian Chen

Proceedings Volume 9053, 905310 (2014) https://doi.org/10.1117/12.2046390

KEYWORDS: Optical lithography, Magnesium, Photomasks, Feature extraction, Algorithm development, Back end of line, Etching, Detection and tracking algorithms, Logic, Directed self assembly

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Proceedings Article | 12 April 2013 Paper

A comparative study of self-aligned quadruple and sextuple patterning techniques for sub-15nm IC scaling

Yijian Chen, Weiling Kang, Pan Zhang

Proceedings Volume 8683, 86830Z (2013) https://doi.org/10.1117/12.2010582

KEYWORDS: Optical lithography, Etching, Photomasks, Scanners, Carbon, Phase only filters, Lithography, Process modeling, Failure analysis, Logic

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