In this paper we design and fabricate the first mirror-integrated silicon-on-insulator-based (SOI-based) arrayed-waveguide grating (AWG) with working functions. The fabricated AWG has a channel spacing of 1.6 nm centered at 1556 nm. We substitute the bent waveguides array in the traditional AWG configuration by adopting the structure of the mirror-integrated straight waveguides. Theoretical advantages of the new structure are demonstrated. Detailed description of the design procedure and the fabrication process is provided. Test results of both the traditional AWG and this design are delineated and analyzed, which shows that the total length of the waveguide array is reduced from 3.14 cm to 2.53 cm, and the holistic structure also becomes more compact. The crosstalk of the fabricated 1x8 AWG is better than -20 dB. The typical on-chip insertion loss is about 10 dB. Losses caused by the mirrors and the waveguides transmission are about 4.2 dB, both of which resulted from the imprecision in the fabrication process.
We have reported a novel 1x2 MEMS optical switch for telecommunication application. A vertical mirror was fabricated by wet anisotropic etching in (110)-oriented silicon wafer. Using DRIE (Deep Reactive Ion Etching) technique, we make a torsional actuator to turn a vertical mirror with a small angle. The actuator was composed of a cantilever beam and two electrodes with curved shape edges. The mirror size was 500 um (L) x 125 um (H) x 50 um (W), and the cantilever dimension was 3000 um (L) x 125 um (H) x 10 um (W). In the optical switch, ball lenses were added in the optics system to extend working distance of fibers. We also fabricated a micro optical platform integrated with the device to simplify the coupling. On the platform, a U-shape groove and fiber clamps were fabricated to accommodate and fix the SMF (single mode fiber). The surface roughness (Ra) of etched mirror was tested below 10 nm. The optical switch was tested on electric and optical characteristics: switching voltage 78.5V, resonance frequency 2.3 kHz, insertion loss 4 - 5 dB, crosstalk 45dB. The device can perform the switching function by the large.
A novel self-aligning SIOB (SIlicon Optical Bench) for fully passive alignment of optical components is proposed for integrated transceiver modules. The coupling efficiency from laser diode directly to fiber is about 8% in theory because of severe mode mismatch and large NA difference. To pursue high coupling efficiency, a ball lens is added between laser diode and fiber. The calculations and simulations are done to optimize the optical system according to optical component specifications. The coupling efficiency is up to 45%. We designed the layout and fabricated the SIOB in (100) silicon wafer to obtain the demanding cavities by MEMS technology.
We simulate the structure of surface MEMS RF switch by suing ANSYS electrostatic and mechanical energy coupled analysis with established models. In this paper actuation voltage for different geometrical scales of suspended beam contacted switch are discussed. The dependence of actuation voltage on the Yang's module, size of cantilever and electrode area is calculated.
In this paper, the fabrication process of polycrystalline diamond film micro-resonators was first reported. Silicon was used as substrate, LPCVD polysilicon films were used as diamond-growth-compatible sacrificial layer, and doped diamond films were grown and patterned by oxygen ion beam dry etching to be the resonators. The flexural beam resonator was vibrated in air under electrostatic excitation with AC voltage of 45 V.
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