Dr. Yoshinori Matsui Profile

Dr. Yoshinori Matsui

Researcher at The Institute of Scientific and Industrial Research

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Publications (3)

Proceedings Article | 11 April 2006 Paper

Reactivity of model compounds of ArF immersion, ArF, and KrF resists with diphenylsulfinyl radical cation, a cage-escape product of photochemistry of triphenylsulfonium salts

Yoshinori Matsui, Hidekazu Sugawara, Shou Tsuji, Toshiro Itani, Shu Seki, Takahiro Kozawa, Seiichi Tagawa

Proceedings Volume 6153, 61530I (2006) https://doi.org/10.1117/12.655087

KEYWORDS: Polymers, Chlorine, Absorption, Line edge roughness, Lithography, Electron beams, Photochemistry, Photolysis, Ions, Scientific research

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Reactivity of diphenylsulfinyl radical cation (Ph₂S^.⁺) with model compounds of "dry/wet" ArF resists and KrF resists was investigated by pulse radiolysis technique, in order to reveal the reaction between Ph₂S^.⁺ and a polymer. Ph₂S^.⁺ is an intermediate of photolysis of triphenylsulfonium salts. Some Ph₂S^.⁺ react with other intermediate of phenyl radical, leading to the formation of (phenylthio)biphenyl products and proton (H⁺). The reaction, referred to as rearrangement reaction, is mainly responsible for acid generation. However, some Ph₂S^.⁺ react with a polymer. Acid-generation efficiency might be enhanced if H+ is also formed by this reaction. Among 25 model compounds employed, Ph₂S^.⁺ was scavenged by phenolic compounds which have lower electrochemical half wave reduction potential (E_1/2) than that of Ph₂S. However, resulting radical cations of the phenolic compounds were not observed. Ph₂S^.⁺ was not scavenged by the other compounds with higher E_1/2. Decay rate constant of Ph₂S^.⁺ scavenged by additives clearly depends on the change of E_1/2 between Ph₂S and the additives including pyrene from which charge transfer was observed to Ph₂S^.⁺. The reaction is therefore charge transfer between the model compounds and Ph₂S^.⁺. The resulting radical cations of phenolic compounds are known to decompose to phenoxy radical and proton (H⁺), suggesting that the compounds contribute to the enhancement of acid-generation efficiency in a chemically amplified resist. From the viewpoint of reaction of Ph₂S^. + with resists, conventional polymer of KrF resist is therefore appropriate for H+ source. Phenolic compounds are generally not appropriate for the component of "dry/wet" ArF resists because of their strong absorption at 193 nm. However, the electron proved to be transferred from fluorinated methylphenols to Ph₂S^.⁺. Fluorinated methylphenols may have a potential for candidate of resist components improving acid generation in "dry/wet" ArF lithography.

Proceedings Article | 14 May 2004 Paper

Outgassing characteristics of acetal resists for 157-nm lithography investigated by time-resolved measurement

Yoshinori Matsui, Shu Seki, Shiro Matsui, Seiichi Tagawa, Shigeo Irie, Toshiro Itani

Proceedings Volume 5376, (2004) https://doi.org/10.1117/12.534742

KEYWORDS: Spectroscopy, Lithography, Polymers, Nano opto mechanical systems, Ions, Mass spectrometry, Optical components, Carbon monoxide, Contamination, Scientific research

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Proceedings Article | 12 June 2003 Paper

Dependence of outgassing characters and total amount of outgassed species at 157-nm exposure on the structures of resist base polymer

Yoshinori Matsui, Satoshi Umeda, Shiro Matsui, Shu Seki, Seiichi Tagawa, Seiichi Ishikawa, Toshiro Itani

Proceedings Volume 5039, (2003) https://doi.org/10.1117/12.485200

KEYWORDS: Polymers, Polymer thin films, Ions, Spectroscopy, Fluorine, Hydrogen, Contamination, Transparency, Silicon, Polymethylmethacrylate

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