Mr. Young-Hong Min Profile

Young-Hong Min

Sr. Application Specialist at ASML Korea Co Ltd

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Publications (11)

Proceedings Article | 13 March 2012 Paper

Overlay metrology for low-k1: challenges and solutions

Jens Neumann, Jongsu Lee, Kiho Yang, Byounghoon Lee, Taehyeong Lee, Jeongsu Park, Chang-moon Lim, Donggyu Yim, Sungki Park, Eric Janda, Kaustuve Bhattacharyya, Chan-ho Ryu, Young-Hong Min, Kiki Rhe, Bernd Geh

Proceedings Volume 8326, 832602 (2012) https://doi.org/10.1117/12.916376

KEYWORDS: Overlay metrology, Diffraction, Data modeling, Metrology, Diffraction gratings, Lithography, Semiconducting wafers, Inspection, Printing, Computer simulations

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Proceedings Article | 4 March 2010 Paper

Analysis of the impact of pupil shape variation by pupil fit modeling

Jin-hyuck Jeon, Chan-ha Park, Hyun-jo Yang, Cheol-kyun Kim, Jin-young Choi, Sang-jin Oh, Dong-gyu Yim, Sung-ki Park, Ki-yeop Park, Young-hong Min, Andre Engelen, Bart Smeets, Joerg Zimmermann

Proceedings Volume 7640, 76400Y (2010) https://doi.org/10.1117/12.846703

KEYWORDS: Scanners, Critical dimension metrology, Shape analysis, Optical proximity correction, Fiber optic illuminators, Semiconducting wafers, Lithography, Control systems, Instrument modeling, Process control

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As K1 factor for mass-production of memory devices has been decreased to almost its theoretical limit, the process window of lithography is getting much smaller and the production yield has become more sensitive to even small variations of the process in lithography. So it is necessary to control the process variations more tightly than ever. In mass-production, it is very hard to extend the production capacity if the tool-to-tool variation of scanners and/or scanner stability through time is not minimized. One of the most critical sources of variation is the illumination pupil. So it is critical to qualify the shape of pupils in scanners to control tool-to-tool variations. Traditionally, the pupil shape has been analyzed by using classical pupil parameters to define pupil shape, but these basic parameters, sometimes, cannot distinguish the tool-to-tool variations. It has been found that the pupil shape can be changed by illumination misalignment or damages in optics and theses changes can have a great effect on critical dimension (CD), pattern profile or OPC accuracy. These imaging effects are not captured by the basic pupil parameters. The correlation between CD and pupil parameters will become even more difficult with the introduction of more complex (freeform) illumination pupils. In this paper, illumination pupils were analyzed using a more sophisticated parametric pupil description (Pupil Fit Model, PFM). And the impact of pupil shape variations on CD for critical features is investigated. The tool-to-tool mismatching in gate layer of 4X memory device was demonstrated for an example. Also, we interpreted which parameter is most sensitive to CD for different applications. It was found that the more sophisticated parametric pupil description is much better compared to the traditional way of pupil control. However, our examples also show that the tool-to-tool pupil variation and pupil variation through time of a scanner can not be adequately monitored by pupil parameters only, The best pupil control strategy is a combination of pupil parameters and simulated CD using measured illumination pupils or modeled pupils.

Proceedings Article | 16 March 2009 Paper

The analysis of polarization characteristics on 40nm memory devices

Minae Yoo, Chanha Park, Taejun You, Hyunjo Yang, Young-Hong Min, Ki-Yeop Park, Donggyu Yim, Sungki Park

Proceedings Volume 7274, 72742W (2009) https://doi.org/10.1117/12.814087

KEYWORDS: Polarization, Critical dimension metrology, Semiconducting wafers, Lithography, Optical lithography, Resolution enhancement technologies, Polarization control, Fiber optic illuminators, Semiconductors, Metrology

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Proceedings Article | 4 December 2008 Paper

Lithography performance and simulation accuracy at different polarization states for sub 40nm node

Ki-Yeop Park, Ho-young Kang, Gratiela Isai, Khalid Elbattay, Peter van Oorschot, Stuart Young, Seung-Chul Oh, Young-Hong Min, Sung-Goo Hong, Youn-Tak Park

Proceedings Volume 7140, 71403N (2008) https://doi.org/10.1117/12.804732

KEYWORDS: Polarization, Nanoimprint lithography, Photomasks, 3D image processing, 3D modeling, Chromium, 3D displays, Lithography, Computer simulations, Device simulation

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Proceedings Article | 27 March 2007 Paper

Characteristics analysis of polarization module on optical proximity effect

Chanha Park, Jongkyun Hong, Kiho Yang, Thomas Theeuwes, Frederic Gautier, Young-Hong Min, Alek Chen, Hyunjo Yang, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6520, 65204X (2007) https://doi.org/10.1117/12.712366

KEYWORDS: Polarization, Critical dimension metrology, Printing, Metrology, Line edge roughness, Reticles, Picosecond phenomena, Resolution enhancement technologies, Optical lithography, Semiconductors

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Proceedings Article | 20 March 2006 Paper

How to obtain accurate resist simulations in very low-k1 era

Tsann-Bim Chiou, Chan-Ha Park, Jae-Seung Choi, Young-Hong Min, Steve Hansen, Shih-En Tseng, Alek Chen, Donggyu Yim

Proceedings Volume 6154, 61542V (2006) https://doi.org/10.1117/12.658990

KEYWORDS: Calibration, Critical dimension metrology, Photomasks, Data modeling, Scanning electron microscopy, Metrology, Cadmium, Tolerancing, Photoresist processing, Image processing

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A procedure for calibrating a resist model iteratively adjusts appropriate parameters until the simulations of the model match the experimental data. The tunable parameters may include the shape of the illuminator, the geometry and transmittance/phase of the mask, light source and scanner-related parameters that affect imaging quality, resist process control and most importantly the physical/chemical factors in the resist model. The resist model can be accurately calibrated by measuring critical dimensions (CD) of a focus-exposure matrix (FEM) and the technique has been demonstrated to be very successful in predicting lithographic performance. However, resist model calibration is more challenging in the low k1 (<0.3) regime because numerous uncertainties, such as mask and resist CD metrology errors, are becoming too large to be ignored. This study demonstrates a resist model calibration procedure for a 0.29 k1 process using a 6% halftone mask containing 2D brickwall patterns. The influence of different scanning electron microscopes (SEM) and their wafer metrology signal analysis algorithms on the accuracy of the resist model is evaluated. As an example of the metrology issue of the resist pattern, the treatment of a sidewall angle is demonstrated for the resist line ends where the contrast is relatively low. Additionally, the mask optical proximity correction (OPC) and corner rounding are considered in the calibration procedure that is based on captured SEM images. Accordingly, the average root-mean-square (RMS) error, which is the difference between simulated and experimental CDs, can be improved by considering the metrological issues. Moreover, a weighting method and a measured CD tolerance are proposed to handle the different CD variations of the various edge points of the wafer resist pattern. After the weighting method is implemented and the CD selection criteria applied, the RMS error can be further suppressed. Therefore, the resist CD and process window can be confidently evaluated using the accurately calibrated resist model. One of the examples simulates the sensitivity of the mask pattern error, which is helpful to specify the mask CD control.

Proceedings Article | 15 March 2006 Paper

The improvement of DOF for sub-100nm process by focus scan

Jung-Chan Kim, Hyun-Jo Yang, Jin-Hyuck Jeon, Chan-Ha Park, James Moon, Dong-gyu Yim, Jin-Woong Kim, Shih-en Tseng, Kyu-Kab Rhe, Young-Hong Min, Alek Chen

Proceedings Volume 6154, 61541K (2006) https://doi.org/10.1117/12.656897

KEYWORDS: Semiconducting wafers, Electroluminescence, Fiber optic illuminators, Photomasks, Image processing, Overlay metrology, Resolution enhancement technologies, Optical proximity correction, Photoresist processing, Scanners

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Proceedings Article | 15 March 2006 Paper

High NA polarized light lithography for 0.29-k1 process

Chanha Park, Jeonkyu Lee, Kiho Yang, Shih-en Tseng, Young-Hong Min, Alek Chen, Hyunjo Yang, Donggyu Yim, Jinwoong Kim

Proceedings Volume 6154, 61540F (2006) https://doi.org/10.1117/12.656841

KEYWORDS: Polarization, Lithography, Line width roughness, Photomasks, Printing, Line edge roughness, Optical lithography, Zirconium, Resolution enhancement technologies, Optical proximity correction

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Proceedings Article | 30 July 2002 Paper

Aberration sensitivity control for the isolation layer in low-k1 DRAM process

Byeong-Ho Cho, Donggyu Yim, Chan-Ha Park, Seung-Hyuk Lee, Hyun-Jo Yang, Jae-Hak Choi, Yong-Chul Shin, Choi-Dong Kim, Jae-Sung Choi, Khil-Ohk Kang, Sang-Wook Kim, Tae-Hwa Yu, Jong-Kyun Hong, Jung-Chan Kim, Min-Seob Han, Ho-Young Heo, Young-Dae Kim, Dong-Duk Lee, Gyu-Han Yoon, Jan van Schoot, Thomas Theeuwes, Young-Hong Min

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474633

KEYWORDS: Diffraction, Lithography, Monochromatic aberrations, Optical lithography, Fourier transforms, Control systems, Phase shifts, Spatial frequencies, Scanners, Photomasks

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Proceedings Article | 30 July 2002 Paper

CD uniformity improvement by active scanner corrections

Jan van Schoot, Oscar Noordman, Peter Vanoppen, Frans Blok, Donggyu Yim, Chan-Ha Park, Byeong-Ho Cho, Thomas Theeuwes, Young-Hong Min

Proceedings Volume 4691, (2002) https://doi.org/10.1117/12.474579

KEYWORDS: Semiconducting wafers, Photomasks, Scanners, Critical dimension metrology, Optical lithography, Etching, Scanning electron microscopy, Metrology, Thin film coatings, Actuators

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Proceedings Article | 22 May 1995 Paper

Effective alignment technique and its implementation to enhance total overlay accuracy on highly reflective films

Young-Hong Min, Seung-Chan Moon, Hyeong-Soo Kim, Ki-Ho Baik, Soo-Han Choi

Proceedings Volume 2439, (1995) https://doi.org/10.1117/12.209212

KEYWORDS: Optical alignment, Aluminum, Sputter deposition, Semiconducting wafers, Sensors, Reflectivity, Data transmission, Overlay metrology, Surface roughness, Metals

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Showing 5 of 11 publications

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