Mr. Yu Xiang Profile

Yu Xiang

Ph.d. student at KTH Royal Institute of Technology

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Proceedings Article | 28 April 2010 Paper

Single-mode InGaAs/GaAs 1.3-µm VCSELs based on a shallow intracavity patterning

Xingang Yu, Il-Sug Chung, Jesper Mørk, Yu Xiang, Jesper Berggren, Mattias Hammar

Proceedings Volume 7720, 772021 (2010) https://doi.org/10.1117/12.854443

KEYWORDS: Vertical cavity surface emitting lasers, Etching, Mirrors, Modulation, Quantum wells, Optical lithography, Silica, Gallium arsenide, Dielectrics, Absorption

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A high-power single-mode 1.3-μm InGaAs/GaAs vertical-cavity surface-emitting laser (VCSEL) structure employing a novel concept of engineering the optical mode profile to match the gain profile is suggested and demonstrated experimentally and theoretically. In contrast to various singlemode VCSEL approaches reported in the literature so far, based on selective loss or anti-resonant effects to suppress higher order modes, it is due to a novel design to increase the active region size while maintaining single mode emission. The shape of the fundamental mode profile is engineered to be similar to the gain profile which resembles a doughnut shape especially in intra-cavity contacted devices. In this way, the fundamental mode with the best fit to the gain profile can reach the lasing condition earliest and consume all the optical gain, leading to a suppression of higher order modes. Notably, despite this engineered shape of the mode profile, the far field shape remains close to Gaussian. The mode shaping can be achieved by introducing a shallow intracavity patterning before depositing the top mirror. Fabricated device structures consist of a A-Si/SiN/SiO₂ top mirror, modulation-doped current spreading layers, re-grown current confinement layers, three InGaAs/GaAs quantum wells, and a GaAs/AlGaAs bottom mirror. Single mode operation is demonstrated even for devices with active region as large as 10μm.

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