Dr. Yukiyasu Arisawa Profile

Dr. Yukiyasu Arisawa

at EUVL Infrastructure Development Ctr Inc

SPIE Involvement:

Author

Publications (27)

Proceedings Article | 17 April 2014 Paper

Experimental verification of the effect of phase defect shape on ABI signal intensity

Noriaki Takagi, Tsuneo Terasawa, Yukiyasu Arisawa

Proceedings Volume 9048, 904822 (2014) https://doi.org/10.1117/12.2046139

KEYWORDS: Semiconducting wafers, Atomic force microscopy, Data modeling, Inspection, Extreme ultraviolet lithography, Defect detection, Photomasks, 3D modeling, Geometrical optics, EUV optics

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Proceedings Article | 1 April 2013 Paper

Impact of EUV mask roughness on lithography performance

Yukiyasu Arisawa, Tsuneo Terasawa, Hidehiro Watanabe

Proceedings Volume 8679, 86792S (2013) https://doi.org/10.1117/12.2011635

KEYWORDS: Photomasks, Monte Carlo methods, Surface roughness, Semiconducting wafers, Extreme ultraviolet, Lithography, 3D modeling, Extreme ultraviolet lithography, Modulation, Tolerancing

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Proceedings Article | 1 April 2013 Paper

Effect of phase defect shape on ABI signal intensity and defect image intensity on wafer with simulation

Noriaki Takagi, Tsuneo Terasawa, Yukiyasu Arisawa

Proceedings Volume 8679, 86791X (2013) https://doi.org/10.1117/12.2011408

KEYWORDS: Semiconducting wafers, Inspection, Extreme ultraviolet lithography, Extreme ultraviolet, Lithography, Photomasks, Image processing, Signal processing, Light, EUV optics

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SPIE Journal Paper | 1 March 2013 Open Access

Impact of the phase defect structure on an actinic dark-field blank inspection signal and wafer printability

Tsuyoshi Amano, Yukiyasu Arisawa, Tsuneo Terasawa

JM3, Vol. 12, Issue 02, 021002, (March 2013) https://doi.org/10.1117/12.10.1117/1.JMM.12.2.021002

KEYWORDS: Palladium, Signal detection, Inspection, Semiconducting wafers, Photomasks, Extreme ultraviolet, Defect detection, Wafer inspection, Printing, Reflectivity

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Proceedings Article | 23 March 2012 Paper

Phase defect printability analyses: dependence of defect type and EUV exposure condition

Tsuneo Terasawa, Takeshi Yamane, Yukiyasu Arisawa, Hidehiro Watanabe

Proceedings Volume 8322, 83221R (2012) https://doi.org/10.1117/12.916387

KEYWORDS: Critical dimension metrology, Extreme ultraviolet lithography, Photomasks, Extreme ultraviolet, Inspection, Near field optics, EUV optics, Image analysis, Bridges, Phase shifts

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Proceedings Article | 23 March 2012 Paper

Impact of the phase defect structure on an actinic dark-field blank inspection signal and wafer printability

Tsuyoshi Amano, Tetsunori Murachi, Takeshi Yamane, Yukiyasu Arisawa, Tsuneo Terasawa

Proceedings Volume 8322, 832234 (2012) https://doi.org/10.1117/12.916309

KEYWORDS: Palladium, Signal detection, Semiconducting wafers, Defect detection, Extreme ultraviolet, Inspection, Transmission electron microscopy, Printing, Photomasks, Wafer inspection

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Proceedings Article | 23 March 2012 Paper

Study of actinic dark-field inspection with programmed amplitude defects

Noriaki Takagi, Takeshi Yamane, Yukiyasu Arisawa, Tsuneo Terasawa

Proceedings Volume 8322, 832235 (2012) https://doi.org/10.1117/12.916320

KEYWORDS: Inspection, Carbon, 3D modeling, Light scattering, Extreme ultraviolet, Extreme ultraviolet lithography, Defect inspection, Near field optics, EUV optics, Multilayers

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Proceedings Article | 7 April 2011 Paper

CD correction for half pitch 2x-nm on extreme ultraviolet lithography

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Alan Myers, Yashesh Shroff, Tetsunori Murachi, Gilroy Vandentop, Ichiro Mori

Proceedings Volume 7969, 79691J (2011) https://doi.org/10.1117/12.878672

KEYWORDS: Critical dimension metrology, Scanning electron microscopy, Extreme ultraviolet lithography, Logic, Photomasks, Optical proximity correction, Model-based design, Lithography, Point spread functions, Electronic design automation

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SPIE Journal Paper | 1 April 2011

Light-shield border impact on the printability of extreme-ultraviolet mask

Takashi Kamo, Kazuo Tawarayama, Yuusuke Tanaka, Yukiyasu Arisawa, Hajime Aoyama, Toshihiko Tanaka, Osamu Suga

JM3, Vol. 10, Issue 02, 023001, (April 2011) https://doi.org/10.1117/12.10.1117/1.3574117

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Multilayers, Reflectivity, Deep ultraviolet, Lithography, Semiconducting wafers, Reticles, Visible radiation

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SPIE Journal Paper | 1 October 2010

Impact of extreme ultraviolet mask absorber defect with pattern roughness on lithographic images

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, Osamu Suga

JM3, Vol. 9, Issue 04, 041204, (October 2010) https://doi.org/10.1117/12.10.1117/1.3494618

KEYWORDS: Photomasks, Line width roughness, Image processing, Scanning electron microscopy, Extreme ultraviolet lithography, Lithography, Extreme ultraviolet, Photoresist processing, Semiconducting wafers, Tolerancing

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Proceedings Article | 27 May 2010 Paper

Challenges in flare correction in EUVL lithography for half pitch 22-nm generation

Taiga Uno, Yukiyasu Arisawa, Hajime Aoyama, Toshihiko Tanaka

Proceedings Volume 7748, 774826 (2010) https://doi.org/10.1117/12.867911

KEYWORDS: Model-based design, Optical proximity correction, Critical dimension metrology, Photomasks, Lithography, Extreme ultraviolet lithography, 3D modeling, Semiconducting wafers, Modulation, Data modeling

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Proceedings Article | 27 May 2010 Paper

Thin absorber EUV mask with light-shield border of etched multilayer and its lithographic performance

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Kazuo Tawarayama, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7748, 774805 (2010) https://doi.org/10.1117/12.867774

KEYWORDS: Photomasks, Reflectivity, Extreme ultraviolet lithography, Multilayers, Extreme ultraviolet, Lithography, Semiconducting wafers, Coating, Reticles, Deep ultraviolet

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Proceedings Article | 23 March 2010 Paper

Fabrication of 35nm via-hole patterns for interconnect test chips with EUV lithography

Yuusuke Tanaka, Hajime Aoyama, Kazuo Tawarayama, Shunko Magoshi, Daisuke Kawamura, Kentaro Matsunaga, Takashi Kamo, Yukiyasu Arisawa, Taiga Uno, Hiroyuki Tanaka, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76362D (2010) https://doi.org/10.1117/12.846315

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Optical proximity correction, Metals, Extreme ultraviolet, Semiconducting wafers, Critical dimension metrology, Semiconductors, Anisotropy, Error analysis

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Proceedings Article | 23 March 2010 Paper

Applicability of extreme ultraviolet lithography to fabrication of half pitch 35nm interconnects

Hajime Aoyama, Yuusuke Tanaka, Kazuo Tawarayama, Naofumi Nakamura, Eiichi Soda, Noriaki Oda, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Kentaro Matsunaga, Daisuke Kawamura, Toshihiko Tanaka, Hiroyuki Tanaka, Shuichi Saito, Ichiro Mori

Proceedings Volume 7636, 76361N (2010) https://doi.org/10.1117/12.846325

KEYWORDS: Extreme ultraviolet lithography, Critical dimension metrology, Optical proximity correction, Semiconducting wafers, Photomasks, Etching, Photoresist processing, Overlay metrology, Lithography, Scanning electron microscopy

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Proceedings Article | 23 March 2010 Paper

Process liability evaluation for beyond 22nm node using EUVL

Kazuo Tawarayama, Hajime Aoyama, Kentaro Matsunaga, Yukiyasu Arisawa, Taiga Uno, Shunko Magoshi, Suigen Kyoh, Yumi Nakajima, Ryoichi Inanami, Satoshi Tanaka, Ayumi Kobiki, Yukiko Kikuchi, Daisuke Kawamura, Kosuke Takai, Koji Murano, Yumi Hayashi, Ichiro Mori

Proceedings Volume 7636, 76361O (2010) https://doi.org/10.1117/12.846265

KEYWORDS: Extreme ultraviolet lithography, Semiconducting wafers, Manufacturing, Lithography, Etching, Extreme ultraviolet, Photoresist processing, Reactive ion etching, Silica, Metals

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Proceedings Article | 20 March 2010 Paper

Impact of EUV mask absorber defect with pattern-roughness on lithographic images

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Mihoko Kijima, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7636, 76360L (2010) https://doi.org/10.1117/12.846347

KEYWORDS: Photomasks, Line width roughness, Scanning electron microscopy, Extreme ultraviolet lithography, Image processing, Lithography, Extreme ultraviolet, Opacity, Semiconducting wafers, Line edge roughness

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Proceedings Article | 20 March 2010 Paper

EUV flare correction for the half-pitch 22nm node

Yukiyasu Arisawa, Hajime Aoyama, Taiga Uno, Toshihiko Tanaka

Proceedings Volume 7636, 763618 (2010) https://doi.org/10.1117/12.846487

KEYWORDS: Optical proximity correction, Model-based design, Point spread functions, Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, Critical dimension metrology, Semiconducting wafers, Lithography, Space mirrors

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SPIE Journal Paper | 1 October 2009

Process liability evaluation for extreme ultraviolet lithography

Hajime Aoyama, Kazuo Tawarayama, Yuusuke Tanaka, Daisuke Kawamura, Yukiyasu Arisawa, Taiga Uno, Takashi Kamo, Toshihiko Tanaka, Toshiro Itani, Hiroyuki Tanaka, Yumi Nakajima, Ryoichi Inanami, Kosuke Takai, Koji Murano, Takeshi Koshiba, Kohji Hashimoto, Ichiro Mori

JM3, Vol. 8, Issue 04, 041508, (October 2009) https://doi.org/10.1117/12.10.1117/1.3238542

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Critical dimension metrology, Point spread functions, Semiconducting wafers, Lithography, Photoresist processing, Semiconductors, Projection systems, Tungsten

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Proceedings Article | 30 September 2009 Paper

Study of EUVL mask defect inspection using 199-nm inspection tool with super-resolution method

Hiroyuki Shigemura, Tsuyoshi Amano, Yukiyasu Arisawa, Osamu Suga, Hideaki Hashimoto, Masanori Saito, Masaya Takeda, Nobutaka Kikuiri, Ryoichi Hirano

Proceedings Volume 7488, 74882I (2009) https://doi.org/10.1117/12.829748

KEYWORDS: Photomasks, Inspection, Opacity, Defect inspection, Defect detection, Extreme ultraviolet lithography, Semiconducting wafers, Reflectivity, Signal analysis, Scanning electron microscopy

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Proceedings Article | 11 May 2009 Paper

Evaluation of EUVL mask pattern defect inspection using 199nm inspection tool with super-resolution method

Hiroyuki Shigemura, Tsuyoshi Amano, Yasushi Nishiyama, Osamu Suga, Yukiyasu Arisawa, Hideaki Hashimoto, Kenichi Takahara, Kinya Usuda, Nobutaka Kikuiri, Ryoichi Hirano

Proceedings Volume 7379, 73792K (2009) https://doi.org/10.1117/12.824334

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Defect inspection, Reflectivity, Optical inspection, Defect detection, Signal detection, Opacity, Finite-difference time-domain method

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Proceedings Article | 18 March 2009 Paper

Flare compensation for EUVL

Yukiyasu Arisawa, Hajime Aoyama, Taiga Uno, Toshihiko Tanaka, Ichiro Mori

Proceedings Volume 7271, 727145 (2009) https://doi.org/10.1117/12.814187

KEYWORDS: Point spread functions, Extreme ultraviolet lithography, Electronic design automation, Tolerancing, Optimization (mathematics), Lithography, Convolution, Visualization, Fractal analysis, Extreme ultraviolet

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Proceedings Article | 18 March 2009 Paper

Defect printability of thin absorber mask in EUV lithography

Takashi Kamo, Hajime Aoyama, Yukiyasu Arisawa, Toshihiko Tanaka, Osamu Suga

Proceedings Volume 7271, 72713I (2009) https://doi.org/10.1117/12.813653

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Semiconducting wafers, Opacity, Extreme ultraviolet, Lithography, Scanning electron microscopy, Image analysis, Computer simulations, Manufacturing

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Proceedings Article | 18 March 2009 Paper

Process liability evaluation for EUVL

Proceedings Volume 7271, 727120 (2009) https://doi.org/10.1117/12.813484

KEYWORDS: Photomasks, Critical dimension metrology, Extreme ultraviolet lithography, Point spread functions, Semiconducting wafers, Logic, Lithography, Electronic design automation, Projection systems, Mask making

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Proceedings Article | 17 October 2008 Paper

The study of EUVL mask defect inspection technology for 32-nm half-pitch node device and beyond

Hiroyuki Shigemura, Tsuyoshi Amano, Yasushi Nishiyama, Osamu Suga, Tsuneo Terasawa, Yukiyasu Arisawa, Hideaki Hashimoto, Norio Kameya, Masaya Takeda, Nobutaka Kikuiri, Ryoichi Hirano, Masatoshi Hirono

Proceedings Volume 7122, 71222F (2008) https://doi.org/10.1117/12.801550

KEYWORDS: Photomasks, Inspection, Extreme ultraviolet lithography, Reflectivity, Defect inspection, Opacity, Scanning electron microscopy, Defect detection, Optical inspection, Finite-difference time-domain method

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Proceedings Article | 21 March 2008 Paper

Flare evaluation for 32-nm half pitch using SFET

Hajime Aoyama, Yuusuke Tanaka, Takashi Kamo, Nobuyuki Iriki, Yukiyasu Arisawa, Toshihiko Tanaka

Proceedings Volume 6921, 69213H (2008) https://doi.org/10.1117/12.771857

KEYWORDS: Critical dimension metrology, Photomasks, Extreme ultraviolet lithography, Floods, Mirrors, Lithography, Projection systems, Semiconducting wafers, 3D modeling, Error analysis

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Flare degrades critical-dimension (CD) control in EUVL, a promising technology for the 32-nm half-pitch node. To deal with flare, high-quality projection optics in the exposure tool and flare variation compensation (FVC) technology with proper mask resizing are needed. Selete has installed a small-field exposure tool (SFET) with the goal of assessing resist performance. Due to the high-quality optics, the SFET allowed us to determine the required flare specification to be 6.1% or 6.6%, as calculated from the residual part of the low- or middle-frequency region, respectively. The flare level was confirmed through experimental results and from calculations using the power spectral density (PSD) obtained from the mirror roughness by the disappearing-resist method. The lithographic performance was evaluated using 32-nm-halfpitch patterns in a new resist. The resist characteristics can be explained by modeling blur as a Gaussian function with a σ of 8.8 nm and using a very accurate CD variation (< ~6 nm) obtained by taking into account the influences of mask CD error and flare on evaluation patterns. Since FVC is needed to obtain flare characteristics that do not degrade the CD, we used the double-exposure method to eliminate the influence of errors, including nonuniform dose distribution and CD mask error. Regardless of whether there was an open area or not, there was no difference in CD as a function of distance up to a distance of 20 µm. In addition, CD degradation was observed at distances not far (< 5 µm) from the open area. In a 60-nm neighborhood of the open area, an 8-nm variation in CD appeared up to the distance at which the CD leveled off. When the influences of resist blur and flare on patterns was taken into account in the calculation, it was found that aerial simulations based on a rigorous 3D model of a mask structure matched the experimental results. These results yield the appropriate mask resizing and the range in which flare has an influence, which is needed for FVC. This research was supported in part by NEDO.

Proceedings Article | 11 May 2007 Paper

Mask quality assurance in cleaning for haze elimination using flexible mask specifications

Kyo Otsubo, Shinji Yamaguchi, Yukiyasu Arisawa, Hidefumi Mukai, Toshiya Kotani, Hiromitsu Mashita, Hiromitsu Hashimoto, Takashi Kamo, Tomohiro Tsutsui, Osamu Ikenaga

Proceedings Volume 6607, 660708 (2007) https://doi.org/10.1117/12.728921

KEYWORDS: Photomasks, Lithography, Air contamination, Transmittance, Semiconducting wafers, Critical dimension metrology, Semiconductors, Computer simulations, Scanning electron microscopy, Manufacturing

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Proceedings Article | 28 June 2005 Paper

Mask enhancement factor for 2D local CD error

Yukiyasu Arisawa, Shoji Mimotogi

Proceedings Volume 5853, (2005) https://doi.org/10.1117/12.617209

KEYWORDS: Photomasks, Error analysis, Lithography, Semiconducting wafers, Line edge roughness, Spatial frequencies, Matrices, Monte Carlo methods, Process engineering

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Showing 5 of 27 publications

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