In this study, by designing high-speed transimpedance amplification circuit and developing photon counting program in the Labview platform, we investigate the variation curve of the area integral (essentially the charge) of the output waveform of Silicon photomultiplier (SiPM) versus the incident light flux (the number of photons irradiated to the surface of SiPM per unit of time). The maximum photon counting rate of 1.56 Gcps was obtained at 470 nm at room temperature. When the light intensity increases to a certain extent, due to the saturation of the SiPM, the photon counting rate did not increase with the increase of the light intensity anymore. In addition, by recording the incident photon number of the calibrated photodiode, we also plot the photon detection effieciency (PDE) curve versus the incident light wavelength under different light intensities. The PDE curves were in accordance with the ones in the datasheet of the SiPM when the light intensity is much smaller than the saturation light intensity for the SiPM.
Multi-pixel photon counters (MPPCs) have attracted much attention in low-light detection, andhave been widely used in lidar, high-energy particle physics, nuclear physics, astrophysics, nuclear medicine imaging and spectroscopy. Accurate measuring of MPPC key parameters is the prerequisite for judging its performance level. In this paper, the measuring methods of key parameters of MPPCare studied comprehensively, and relatively simple measuring methods are proposed, mainly including the measuring methods of pulse waveform characteristics, Dark Counting Rate (DCR), Photon DetectionEfficiency (PDE), photon number-resolved spectrum, optical crosstalk probability, gain and reverse volt-ampere characteristics of MPPC. A test measuring system is built. The parameters of typical MPPC devices are measured experimentally. The test results are reasonable, and the measured values of various parameters are basically consistent with the nominal values in the MPPCdevice specification.
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