Dr. Zachary Adam Levinson Profile

Dr. Zachary Adam Levinson

Sr. Staff Application Engineer at Synopsys Inc

SPIE Involvement:

Author

Area of Expertise:

Microlithography , Aberration extraction

Publications (24)

Proceedings Article | 12 November 2024 Presentation + Paper

Design and process-friendly High-NA EUV stitching options

Kevin Lucas, Zachary Levinson, Yunqiang Zhang, Xiangyu Zhou, Kevin Hooker, Linghui Wu, Lin Wang, Michael Lam, Soo-Han Choi, James Ban

Proceedings Volume 13216, 132161U (2024) https://doi.org/10.1117/12.3034869

KEYWORDS: Design, Optical lithography, Design rules, Scanners, Printing, Extreme ultraviolet lithography, Extreme ultraviolet, SRAF, Semiconducting wafers

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Proceedings Article | 10 April 2024 Presentation + Paper

Full-field correction for stitched double exposure high-NA EUVL processes

Zachary Levinson, Linghui Wu, Wolfgang Hoppe

Proceedings Volume 12954, 129540V (2024) https://doi.org/10.1117/12.3012806

KEYWORDS: Optical proximity correction, Design, Reticles, Image processing, Reflectivity, Extreme ultraviolet lithography, Scanners, Semiconducting wafers, Printing, Optical simulations

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Proceedings Article | 10 April 2024 Presentation + Paper

High accuracy OPC electromagnetic full-chip modeling for curvilinear mask OPC and ILT

Enas Sakr, Zac Levinson, Rob DeLancey, C. Jay Lee, Jinguang Li, Ryan Chen, Robert Iwanow, Delian Yang, Wolfgang Hoppe, Folarin Latinwo, Kevin Lucas, Peng Liu

Proceedings Volume 12954, 129540N (2024) https://doi.org/10.1117/12.3013089

KEYWORDS: Optical proximity correction, Electromagnetism, Semiconducting wafers, Extreme ultraviolet, Cadmium, 3D mask effects, Modeling, Lithography, Computational lithography, Ranging

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Proceedings Article | 28 April 2023 Presentation + Paper

Electrical analysis of a stochastically simulated 2 nm node electrical test structure

Lawrence Melvin, Wolfgang Demmerle, Joachim Siebert, Phil Stopford, Sergey Zavadskiy, Renato Hentschke, Krishna Ramkumar, Sylvain Berthiaume, Yudhishthir Kandel, Wolfgang Hoppe, Ulrich Klostermann, Zachary Levinson, Hans-Jürgen Stock, Ulrich Welling

Proceedings Volume 12495, 124950W (2023) https://doi.org/10.1117/12.2658780

KEYWORDS: Stochastic processes, Resistance, Simulations, Overlay metrology, Optical lithography, Lithography, Optical proximity correction, Ruthenium, Etching

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Proceedings Article | 28 April 2023 Presentation + Paper

Evaluation of field stitching optimization for robust manufacturing with high-NA EUVL

Zachary Levinson, Thuc Dam, Paul Pfaeffli, C. Jay Lee, Wolfgang Hoppe, Ulrich Klostermann, Kevin Lucas

Proceedings Volume 12495, 124950B (2023) https://doi.org/10.1117/12.2659721

KEYWORDS: Reticles, Etching, Tolerancing, Extreme ultraviolet lithography, Simulations, Mirrors, Scanners, Manufacturing, Semiconducting wafers, Metals

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Proceedings Article | 28 April 2023 Presentation + Paper

High accuracy OPC modeling for new EUV low-K1 mask technology options

Enas Sakr, Rob DeLancey, Wolfgang Hoppe, Zac Levinson, Robert Iwanow, Ryan Chen, Delian Yang, Kevin Lucas

Proceedings Volume 12495, 124950P (2023) https://doi.org/10.1117/12.2658720

KEYWORDS: Extreme ultraviolet, Optical proximity correction, Multilayers, Optical lithography, Modeling, 3D mask effects

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EUV lithography has been ramped to successful volume manufacturing through a combination of improvements in process technology, layout design and device interactions, and also optimization of the overall product integration to reduce undesirable interactions. Because EUV has additional sources of systematic and stochastic variation that did not exist in DUV lithography, it is now even more important to have accurate predictive capability to test and understand the design and lithography process interactions. EUV-specific physical behavior such as shadowing, flare, mask topography (i.e., Mask3D) effects, mask stack reflectivity, mask absorber behavior and other effects are key differences in how EUV forms an image on the mask and subsequently on the wafer. The reflective mask substrate and EUV-specific mask absorber stack are therefore highly important technologies to optimize as the industry pushes both low NA (0.33NA) and high NA (0.55NA) technologies to cover the patterning requirements of upcoming 3nm and below technology nodes. Recently there have been substantial industry interest in optimizing EUV mask stacks to further enhance imaging behavior and achieve better pattern resolution, increase process window, lower stochastic defectivity and optimize flare. Several different options have been proposed for these new EUV mask stacks for lower K1 EUV patterning. All of these new options require excellent simulation accuracy in OPC, SrAF placement, OPC verification and ILT mask synthesis steps in order to realize the benefits of the new mask stacks. In this paper we will focus on analyzing and improving the accurate prediction of a range of new EUV mask stack options for full-chip OPC/ILT compatible compact models. We will show for advanced mask designs the accuracy requirements and capability of leading-edge compact models. The accuracy requirements and capability will be referenced to fully rigorous electromagnetic solver (e.g., Mask3D) results to ensure industry needs are met. We will also explore the mask stack options to highlight the imaging benefits for different material thickness, refractive index (n) and extinction coefficient (k) on important mask pattern feature and layer types.

Proceedings Article | 28 April 2023 Presentation + Paper

Absorber material deficiency impact on a stochastically patterned wafer analyzed with a clustered model

Lawrence Melvin, Yudhishthir Kandel, Zachary Levinson, Ulrich Welling

Proceedings Volume 12494, 124940F (2023) https://doi.org/10.1117/12.2658777

KEYWORDS: Windows, Semiconducting wafers, Stochastic processes, Simulations, Ruthenium, Platinum, Alloys, SRAF, Composites, Critical dimension metrology

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Proceedings Article | 28 April 2023 Presentation + Paper

Process optimization for next generation high-NA EUV patterning by computational lithography techniques

Zachary Levinson, Thuc Dam, Pervaiz Kareem, C. Jay Lee, Wolfgang Demmerle, Ulrich Klostermann

Proceedings Volume 12494, 124940W (2023) https://doi.org/10.1117/12.2658580

KEYWORDS: Extreme ultraviolet, SRAF, Semiconducting wafers, Extreme ultraviolet lithography, Optical lithography, Scanners, Reflection, Lithography, Computational lithography, Process control

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The lithography industry has historically striven to improve resolution by reducing wavelength and increasing the lens’ numerical aperture (NA). The introduction of 0.33 NA extreme ultraviolet (EUV) lithography into high-volume manufacturing (HVM) represents the largest jump in resolution ever achieved by the industry. However, even this resolution is not sufficient for the patterns required for beyond the 2 nm logic technology node. This is due to low contrast and the diffraction limit of current EUVL scanners for the mask patterns required for these nodes. Instead, the resolution must be improved by increasing the NA. This will also increase the contrast of patterns which had insufficient contrast at 0.33 NA, which will in turn improve LCDU and defectivity. This change is not without its challenges though. Increasing the NA from 0.33 to 0.55 will cause a significant reduction in depth of focus. In addition, stronger mask 3D effects can cause pattern dependent shifts in best focus. As a result, the common overlapping process window of several critical patterns can become strongly diminished. The use of anamorphic optics will require two separate half-field exposures to obtain the equivalent of a single full-field exposure on current EUV and DUV scanners. For some chip sizes, this will require stitching two half-fields together to pattern the full chip area. In previous technology nodes, the process window could be improved using SMO and SRAFs. In addition, over the last five years, the industry has put significant effort into studying alternative absorbing materials. These materials can significantly reduce the mask 3D effects by reducing the thickness of the absorber. The use of alternative absorbers alone will not be sufficient for improving the overlapping process window. Instead, several techniques must be simultaneously utilized in order to ensure sufficient overall process window. Optimization of overlapping process windows is critical for successful insertion of high-NA EUVL into HVM. In this paper we analyze how the process window of critical patterns can be optimized by using different optimizations. We will show for realistic mask designs how process window can be improved in different process steps. Double exposure from half-field stitching will also be included in the process evaluation. We use both rigorous and compact modeling in a complimentary fashion for overall process optimization analysis. All techniques presented in this paper accurately model the anamorphic, centrally obscured optics of the upcoming next-generation high-NA scanners.

Proceedings Article | 22 February 2021 Presentation

Predicting very rare stochastic defects in EUVL processes for full-chip correction and verification

Zachary Adam Levinson, Yudhishthir Kandel, Makoto Miyagi, Kevin Lucas

Proceedings Volume 11609, 1160915 (2021) https://doi.org/10.1117/12.2585068

KEYWORDS: Stochastic processes, Extreme ultraviolet lithography, Lithography, Image processing, Photoresist materials, Absorption, Photon counting, Critical dimension metrology, Statistical analysis, Source mask optimization

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Proceedings Article | 23 March 2020 Presentation + Paper

Lithographic pattern formation in the presence of aberrations in anamorphic optical systems

Zac Levinson, Bruce Smith

Proceedings Volume 11323, 113230A (2020) https://doi.org/10.1117/12.2554093

KEYWORDS: Monochromatic aberrations, Point spread functions, Zernike polynomials, Geometrical optics, Wavefronts, Lithography, Code v, Extreme ultraviolet lithography, Computing systems, Mirrors, EUV optics

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Proceedings Article | 23 March 2020 Paper

Impact of flare on source mask optimization in EUVL for 7nm technology node

Lisong Dong, Rui Chen, Taian Fan, Rongbo Zhao, Yayi Wei, Jianjun Jia, Zac Levinson, Thuc Dam, Jay Lee, Yongdong Wang, Larry Melvin

Proceedings Volume 11323, 113232E (2020) https://doi.org/10.1117/12.2552008

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Source mask optimization, Nanoimprint lithography, Lithography, Extreme ultraviolet, Electroluminescence, Reflectivity, Critical dimension metrology, Light scattering

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Proceedings Article | 23 March 2020 Paper

Compact modeling to predict and correct stochastic hotspots in EUVL

Zachary Levinson, Yudhishthir Kandel, Yunqiang Zhang, Qiliang Yan, Makoto Miyagi, Xiaohai Li, Kevin Lucas

Proceedings Volume 11323, 1132324 (2020) https://doi.org/10.1117/12.2554099

KEYWORDS: Stochastic processes, Optical proximity correction, Extreme ultraviolet lithography, Data modeling, Critical dimension metrology, Calibration, Monte Carlo methods, Lithography, Failure analysis, Image processing

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Proceedings Article | 9 October 2018 Presentation + Paper

Rapid image-based pupil plane characterization for EUV lithography systems

Zac Levinson, Erik Verduijn, Timothy Brunner, Obert Wood, Bruce Smith

Proceedings Volume 10809, 108090O (2018) https://doi.org/10.1117/12.2501863

KEYWORDS: Monochromatic aberrations, Extreme ultraviolet lithography, Critical dimension metrology, Wavefronts, Semiconducting wafers, Principal component analysis, Imaging systems, Metrology, Lithography, Detection and tracking algorithms

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SPIE Journal Paper | 19 June 2017

Image-based pupil plane characterization via a space-domain basis

Zac Levinson, Andrew Burbine, Erik Verduijn, Obert Wood, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

JM3, Vol. 16, Issue 02, 023509, (June 2017) https://doi.org/10.1117/12.10.1117/1.JMM.16.2.023509

KEYWORDS: Systems modeling, Data modeling, Lithography, Tolerancing, Binary data, Photomasks, Image transmission, Semiconductors, Reticles

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Proceedings Article | 24 March 2017 Paper

Image-based pupil plane characterization for anamorphic lithography systems

Zac Levinson, Bruce Smith

Proceedings Volume 10143, 101431W (2017) https://doi.org/10.1117/12.2258389

KEYWORDS: Extreme ultraviolet lithography, Metrology, Lithography, Extreme ultraviolet, EUV optics, Image resolution, Binary data, Principal component analysis, Image analysis, Monochromatic aberrations, Zernike polynomials, Wavefronts, Spherical lenses, Objectives, Patents

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SPIE Journal Paper | 28 June 2016

Measurement of EUV lithography pupil amplitude and phase variation via image-based methodology

Zachary Levinson, Erik Verduijn, Obert Wood, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

JM3, Vol. 15, Issue 02, 023508, (June 2016) https://doi.org/10.1117/12.10.1117/1.JMM.15.2.023508

KEYWORDS: Zernike polynomials, Extreme ultraviolet lithography, Extreme ultraviolet, Monochromatic aberrations, Imaging systems, Photomasks, Wavefronts, Metrology, Microscopes, Statistical analysis

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Proceedings Article | 18 March 2016 Paper

An automated image-based tool for pupil plane characterization of EUVL tools

Zac Levinson, Jack Smith, Germain Fenger, Bruce Smith

Proceedings Volume 9776, 97762M (2016) https://doi.org/10.1117/12.2219704

KEYWORDS: Extreme ultraviolet lithography, Metrology, Image processing, Extreme ultraviolet, Software development, Photomicroscopy, Photomasks, Lithography, Wavefronts, Image analysis, Image filtering, Monochromatic aberrations, Principal component analysis, Data modeling, Computer simulations

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Proceedings Article | 18 March 2016 Paper

Image-based pupil plane characterization via principal component analysis for EUVL tools

Zac Levinson, Andrew Burbine, Erik Verduijn, Obert Wood, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Bruce Smith

Proceedings Volume 9776, 977618 (2016) https://doi.org/10.1117/12.2219745

KEYWORDS: Principal component analysis, Extreme ultraviolet lithography, Metrology, Extreme ultraviolet, Image processing, Systems modeling, Photomasks, Data modeling, Lithography, Interferometry, Monochromatic aberrations, Computer simulations, Detection and tracking algorithms, Semiconductors

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Proceedings Article | 18 March 2016 Paper

3D mask effects of absorber geometry in EUV lithography systems

Riaz Haque, Zac Levinson, Bruce Smith

Proceedings Volume 9776, 97760F (2016) https://doi.org/10.1117/12.2219708

KEYWORDS: Photomasks, Extreme ultraviolet lithography, Extreme ultraviolet, 3D modeling, Phase shifts, Systems modeling, Deep ultraviolet, Monochromatic aberrations, Diffraction, Lithography, 3D image processing, Point spread functions

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Proceedings Article | 16 March 2015 Paper

A method of image-based aberration metrology for EUVL tools

Zac Levinson, Sudharshanan Raghunathan, Erik Verduijn, Obert Wood, Pawitter Mangat, Kenneth Goldberg, Markus Benk, Antoine Wojdyla, Vicky Philipsen, Eric Hendrickx, Bruce Smith

Proceedings Volume 9422, 942215 (2015) https://doi.org/10.1117/12.2087177

KEYWORDS: Monochromatic aberrations, Imaging systems, Wavefronts, Extreme ultraviolet, Metrology, Extreme ultraviolet lithography, Photomasks, Zernike polynomials, Microscopes, Phase measurement

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Proceedings Article | 17 April 2014 Paper

Optimization of image-based aberration metrology for EUV lithography

Zac Levinson, Germain Fenger, Andrew Burbine, Anthony Schepis, Bruce Smith

Proceedings Volume 9048, 90482M (2014) https://doi.org/10.1117/12.2046483

KEYWORDS: Metrology, Monochromatic aberrations, Wavefronts, Extreme ultraviolet lithography, Nanoimprint lithography, Diffraction, Lithography, Detection and tracking algorithms, Photomasks, Extreme ultraviolet

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Proceedings Article | 17 April 2014 Paper

Study of angular effects for optical systems into the EUV

Andrew Burbine, Zac Levinson, Anthony Schepis, Bruce Smith

Proceedings Volume 9048, 90482N (2014) https://doi.org/10.1117/12.2046488

KEYWORDS: Extreme ultraviolet, Extreme ultraviolet lithography, Photomasks, Nanoimprint lithography, Refractive index, Diffraction, EUV optics, Reflectivity, Absorption, Optics manufacturing

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Proceedings Article | 31 March 2014 Paper

Alternative method for variable aspect ratio vias using a vortex mask

Anthony Schepis, Zac Levinson, Andrew Burbine, Bruce Smith

Proceedings Volume 9052, 90521M (2014) https://doi.org/10.1117/12.2046495

KEYWORDS: Photomasks, Lithography, Spiral phase plates, Optical lithography, Fiber optic illuminators, Critical dimension metrology, Electroluminescence, Chemical elements, Phase shifts, Optical vortices

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Historically IC (integrated circuit) device scaling has bridged the gap between technology nodes. Device size reduction is enabled by increased pattern density, enhancing functionality and effectively reducing cost per chip. Exemplifying this trend are aggressive reductions in memory cell sizes that have resulted in systems with diminishing area between bit/word lines. This affords an even greater challenge in the patterning of contact level features that are inherently difficult to resolve because of their relatively small area and complex aerial image. To accommodate these trends, semiconductor device design has shifted toward the implementation of elliptical contact features. This empowers designers to maximize the use of free device space, preserving contact area and effectively reducing the via dimension just along a single axis. It is therefore critical to provide methods that enhance the resolving capacity of varying aspect ratio vias for implementation in electronic design systems. Vortex masks, characterized by their helically induced propagation of light and consequent dark core, afford great potential for the patterning of such features when coupled with a high resolution negative tone resist system. This study investigates the integration of a vortex mask in a 193nm immersion (193i) lithography system and qualifies its ability to augment aspect ratio through feature density using aerial image vector simulation. It was found that vortex fabricated vias provide a distinct resolution advantage over traditionally patterned contact features employing a 6% attenuated phase shift mask (APM). 1:1 features were resolvable at 110nm pitch with a 38nm critical dimension (CD) and 110nm depth of focus (DOF) at 10% exposure latitude (EL). Furthermore, iterative source-mask optimization was executed as means to augment aspect ratio. By employing mask asymmetries and directionally biased sources aspect ratios ranging between 1:1 and 2:1 were achievable, however, this range is ultimately dictated by pitch employed.

Proceedings Article | 31 March 2014 Paper

Mitigating mask roughness via pupil filtering

B. Baylav, C. Maloney, Z. Levinson, J. Bekaert, A. Vaglio Pret, B. Smith

Proceedings Volume 9052, 90521O (2014) https://doi.org/10.1117/12.2045668

KEYWORDS: Photomasks, Image filtering, Optical filters, Line width roughness, Line edge roughness, Diffraction, Lithography, Extreme ultraviolet, Phase shift keying, Semiconducting wafers

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Showing 5 of 24 publications

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