Scanning Electron Microscopy (SEM) uses surface-emitted Secondary Electrons (SE) to produce grayscale level images. From these SEM images, an observer can mentally represent the topography of the imaged object. Numerical techniques can additionally provide a quantitative assessment of the topography, which is one of the major challenge in the today microelectronics industry for advanced nodes and more-than-moore devices. In this paper, we propose and validate a non-destructive, fast 3D metrology strategy for microscopic object. Various microlens-like 3D structures are patterned on 300 nm wafers by grayscale i-line lithography. The lenses are imaged by a SEM tool with a four-quadrant SE detector, and also measured by Atomic Force Microscopy (AFM) which serves as 3D reference metrology. Both, AFM and SEM data are co-registered and background is removed. An analytical SEM model is used both for SEM detector calibration and parametric reconstruction. First, we observe that this model poorly describes the entire SEM images of the device under test, partly due to electron screening and reemission effects. Secondly, by weighting the image depending on the quadrant orientation, we show that this model can still be used for both calibration and parametric reconstruction. The parametric reconstructions of microlenses with different footprints and heights match well the reference geometries.
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