The defect of silicon photovoltaic (PV) modules excited by photoluminescence (PL) technology at high light level (HLL) will be easily drowned in the ambient light; therefore, the detection equipment cannot sense the defect information directly. To solve this problem, a defect detection method that effectively resists the interference of ambient light in daytime is proposed in this paper. This method uses modulated light as the excitation for PV modules, and employs the near-infrared (NIR) camera to capture a group of image sequences satisfying the modulation characteristics. To restore the defect information of PV modules from image sequences, an algorithm based on time domain error is proposed. Finally, hardware acceleration of algorithm by field programmable gate array is implemented to solve the problem of time-consuming tasks for the personal computer. The experimental results show that this method can effectively restore the defect pattern with HLL extending from 0.1 lx to 11,170 ± 5 lx. Therefore, this work can provide an effective detection strategy for PL detection of PV modules at HLL.
Resolution is an important index for evaluating the performance of a low-light-level image intensifier. The traditional method of image tube resolution measurement is to observe the resolution target on the image intensifier through a microscope and give a subjective judgment. The disadvantage is that the difference in the visual acuity between testers will lead to variability in measurement results. In addition, the process of focusing the resolution image is very time-consuming and eye-consuming. To solve these problems, an objective evaluation system of image tube resolution based on fast Fourier transform (FFT) that provides an efficient and feasible objective evaluation scheme for the estimation of image tube resolution is proposed. In this system, the resolution target is first focused on the cathode surface of the image tube through an optical system, and then the image is taken by a high-resolution camera. The region of interest of the collected image shows that the gray-scale sequence along the direction of the stripe change reflects the frequency of the stripe. When the gray-scale sequence is transformed to the frequency domain using FFT, the clarity and resolution of the stripe will be correlated with some quantities in the frequency domain. We extract the clarity-resolution values from the frequency domain of all stripe elements and use the generated clarity threshold combined with the linear fitting strategy to achieve the resolution value. The experimental results show that, in terms of accuracy, the test results of the system are consistent with the subjective evaluation results. For the tubes with resolutions between 61.37 and 66.49 lp / mm, the accuracy of our system is higher than that of human judgment. For repeatability, the measurement results of the system are in good agreement with the subjective evaluation results of the tubes with resolutions between 50 and 62 lp / mm. Therefore, our system can be regarded as a reasonable alternative to the subjective evaluation method, which will greatly reduce the variability caused by different testers.
GaAs is an important short-wave near-infrared photocathode material. In this paper, the first-principles plane wave pseudopotential method based on the density functional theory framework is used to study the influence mechanism of external electric field on the electronic structure of GaAs. Applying an electric field in different directions to GaAs shows that the (011) electric field direction has the strongest effect on opening the GaAs energy gap. Then, the electric fields of different strength are applied along the (011) direction. The results show that the energy gap of GaAs is 0.937eV when no electric field is applied. With increasing the electric field strength in the (011) direction, the energy gap of GaAs decreases gradually, when the electric field strength reaches 1eV/Å/e, the energy gap of GaAs is almost zero. Notice that in the conduction band region where the total density of state of GaAs gradually shifts to Fermi surface and the Span gradually decrease with increasing the electric field strength, while valence band is the opposite of the conduction band.
Fiber Bragg sensor is applied for detecting and monitoring the cracks that occur in the reinforced concrete. We use the three-dimensional finite element model to provide the three-axial stresses along the fiber Bragg sensor and then converted the stresses as a wavelength deformation of fiber Bragg grating (FBG) reflected spectrum. For the crack detection, an FBG sensor with 10-mm length is embedded in the reinforced concrete, and its reflection spectrum is measured after loading is applied to the concrete slab. As a result, the main peak wavelength and the ratio of the peak reflectivity to the maximal side-mode reflectivity of the optic-fiber grating represent the fracture severity. The fact that the sharp decreasing of the ratio of the peak reflectivity to the maximal side-mode reflectivity represents the early crack is confirmed by the theoretical calculation. The method can be used to detect the cracks in the reinforced concrete and give safety evaluation of large-scale infrastructure.
The studies of quantum efficiency, electronic energy distribution and stability are highly concerned in the application
of Negative electron affinity (NEA) gallium nitride (GaN) photocathodes while the resolution of photocathodes are
concerned rarely. The resolutions of some image intensifiers are smaller than computational value partly because of
ignoring the resolution of photocathodes. To a certain extent, the resolutions of image intensifiers are influenced by
photocathodes. Electronic transverse diffusion is the main cause of decreasing the resolution of photocathodes whereas
the exponential-doping structure can reduce its influence. In this paper, the resolution characteristics of photocathodes
have been studied by using the modulation transfer function (MTF) method. The MTF expressions of transmission-mode
exponential-doping photocathodes have been obtained by solving the two-dimensional continuity equations. According
to the MTF expressions, the resolution characteristics between exponential-doping and uniform-doping GaN
photocathodes are calculated theoretically and analyzed comparatively. At the same time, the relationships between
resolution and thickness of the emission layer Te, electron diffusion length LD are researched in detail. The calculated results show that, compared with the uniform-doping photocathode, the exponential-doping structure can increase the
resolution of photocathode evidently. The resolution of exponential-doping GaN photocathode is improved distinctly
when the spatial frequency varies from 400 to 800 lp/mm. The MTF characteristics approach gradually when f increases
or decreases. Let f =600 lp/mm, the resolution increases by 20%-48% approximately. The constant built-in electric field
for exponential-doping GaN photocathode can increase the resolution of photocathode. The improvement of resolution is
different from decreasing Te, LD or increasing the recombination velocity of back-interface which are at the cost of reducing the quantum efficiency of photocathode. Therefore, the MTF expressions of transmission-mode
exponential-doping photocathode play a positive role in improving the resolution of ultraviolet detector and optimizing
the structural design of GaN photocathode.
To analyze the formation mechanism of the halo on low light level image intensifiers and the influencing factors on the halo size, a halo tester has been designed. Under the illumination between 10-2 lx and 10-4 lx, we use the tester to collect a 0.1922 mm hole image directly with CoolSNAPK4 charge-coupled device (CCD) in a darkroom. The practical measurement result shows that the amplification ratio is 343.4. Then we put the super second and third generation image intensifiers after the hole, and the halo sizes of the hole images on the screens are determined as 0.2388 and 0.5533 mm respectively. The results are helpful to improve the quality of the low light level image intensifiers.
In order to avoid the low sensitivity common problem of 532nm sensitive narrow-band response photocathode, variable doping narrow-band response GaAlAs photocathode structure is designed. The photocathode is composed of GaAs substrates, Ga1-x1Alx1As buffer layer, Ga1-x2Alx2As doping concentration gradient emissive layer and GaAs protection layer from bottom to top. Among them, exponential doping method is applied to Ga1-x2Alx2As unit layer from the bottom to the top. And a preparation methods of GaAlAs photocathode is developed. For the GaAlAs photocathode components which grow well, chemical cleaning, heating purification and (Cs, O) activation are operated, and ultimately Cs / O activation layer is formed on the surface of Ga1-x2Alx2As doping concentration gradient emissive layer. The highest sensitivity of the photocathode peak response is at 532nm, and the photocathode quantum efficiency in 532nm peaks at 36%.
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