Ni based nano/micro structures are wildly applied in fabrication of nano/micro imprint template, meta-surface, diffractive elements, etc. In this work, the fabrication of Ni structures by electroplating method on a AIST resist is studied. AIST is first deposited on glass substrate to form a layer of thin film. Then, the film is exposed to arbitrary pattern structure by laser direct writing system. And the exposed region changes from amorphous state to crystalline state due to photo-thermal physical reaction. Owing to the different development rates of the exposed region and the non-exposed region, the micro/nano structures can be obtained. Subsequently, continuous Ni structures were formed by electroplating method on the former AIST structure which confirmed by the images of optical microscope(OM) and scanning electron microscope(SEM). This work greatly broadens the application scope and prospect of direct laser writing in heat- mode lithography technology.
The available information which is sharply increased requires a long time-period and high-capacity preservation method. In this paper, we proposed a method to preserve miniature image in stack structure. A large number of information images with a minimum pixel size of 200 nm were transferred to an AIST thin film using a laser directly writing system. After clearness, the information region was retained and the non-information region was removed. The single-layer information region samples with a thickness of 0.15 mm have high contrast and high transmittance. After being stacked and packaged into a 52-layer structure, each layer information image can be read out directly by an optical microscopy. The tolerance of the material to acid, alkali, and temperature is tested, and the results show that this method has excellent information preservation performance. This work provides a promising solution for future information preservation.
The GeSbTe (GST) thin films are usually used as optical and electronic data recording materials. In this work, the GST thin films were used as both negative and positive resists, and the positive and negative tone pattern structures were fabricated on the GST thin films, accordingly. The GST films were first deposited on the substrate, then the laser exposures were conducted through a focused laser beam spot. For negative resist, a Tetramethyl ammonium hydroxide (TMAH) was used as developing solution. For positive resist, (NH4)2S was used as developing solution. The structure heights of positive and negative resists are 53 nm and 180 nm were obtained, respectively. This work provides an effective method for fabricating the micro/nanostructures of optical and electronic elements.
Laser heat-mode lithography is very useful for the fabrication of micro/nanostructure-based optical elements. In laser heat-mode lithography, the pattern structures need to be transferred to the substrates by wet-etching or dry-etching method. In this work, a lift-off method for the pattern transfer in laser heat-mode lithography was proposed and studied. A desirable undercut profile was obtained by manipulating the thermal field profile of laser heat-mode exposure, and a lift-off of Cr layer with a thickness of 80 nm on a quartz glass substrate was achieved. The results indicated that laser heat-mode lithography with lift-off process is an effective method to transfer the pattern structures to Cr layer and generate a Cr-based hard mask, which is useful for the fabrication of micro/nanostructure-based optical elements.
Phase change material Sb2Te3 has been proved to possess a strong nonlinear saturation absorption effect, which could produce a dynamic and reversible optical pinhole channel as the origin of breaking through the diffraction limit. In this work, a pump–probe experimental setup is constructed to explore the transient formation process of the dynamic and reversible optical pinhole channel, and the transient transmission and reflection light intensities of the Sb2Te3 are measured directly. The results show that Sb2Te3 is an appropriate material for the mask layer of super resolution nano-optical fabrication.
Laser thermal lithography has been proposed for a few years, which has the advantages of breaking through the optical diffraction limit, operation in far-field and in air, and low production cost. In this paper, a new hydrazone metal complex is used as the laser thermal lithography material due to its feature of the one-step fabrication of micro/nano structure without mask and wet-etching process. Based on the laser thermal lithography method, super resolution nano-information pits are directly written on the surface of hydrazone metal complex thin films. Pits with a minimum feature size of about 79 nm are successfully obtained, which is only about 1/7 of the writing spot size. Moreover, the reactive ion etching method can be applied to transfer the pits onto a silica substrate. These results suggest the potential applications of the new material in high density optical data storage and semiconductor industries.
Fabrication of high-resolution micro-structures is essential for DOEs and MEMS and has attracted increasing attention. In this study, several high-resolution micro-structures have been fabricated on AgInSbTe phase-change films by laser thermal lithography, and the minimum linewidth of these structures is about 200 nm, which is smaller than the size of the focused spot. The results indicate that laser thermal lithography is a simple and effective technique for the fabrication of micro-structures on AgInSbTe phase-change thin films.
Laser thermal lithography technology based on the optothermal mode is a very promising fabrication approach in high density optical storage and semiconductor industry. SbBi thin film is a typical phase change material which has been deep going studied and widely used as the super-resolution mask layer. Phase transformation of the SbBi material from amorphous to crystalline state can be achieved by vacuum annealing or laser irradiating. In this work, SbBi thin films as a new thermal lithography material are investigated for the first time. The thermal lithography characteristics of SbBi thin films were studied by means of etching in the ammonium sulfide solution. Line-shaped structures were developed using our laser-induced crystallization apparatus, followed by etching in the ammonium sulfide solution. It is found that the etching rate of the amorphous state is greater than that of the crystalline state, which are 17.8 nm/min and 4 nm/min, respectively. The mechanism of the difference in etching rate between the two states is also discussed. These results indicate that SbBi thin film is a potential candidate for thermal lithography materials.
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