Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires

Yukimi Jinno; Renji Okuda; Naoki Sone; Weifang Lu; Yoshiya Miyamoto; Kazuma Ito; Shiori Yamamura; Sae Katsuro; Nanami Nakayama; Satoshi Kamiyama; Tetsuya Takeuchi; Motoaki Iwaya

doi:10.1117/12.2608187

5 March 2022 Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires

Yukimi Jinno, Renji Okuda, Naoki Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, Shiori Yamamura, Sae Katsuro, Nanami Nakayama, Satoshi Kamiyama, Tetsuya Takeuchi, Motoaki Iwaya

Author Affiliations +

Proceedings Volume PC12001, Gallium Nitride Materials and Devices XVII; PC120011E (2022) https://doi.org/10.1117/12.2608187
Event: SPIE OPTO, 2022, San Francisco, California, United States

Conference Poster

Abstract

A nitride-based light-emitting structure composed of a GaN nanowire core and GaInN/GaN multi-quantum shells (MQSs) is promising for high performance optoelectronic devices. By growing high crystalline quality MQS on the nonpolar (m-plane) sidewall of the nanowires, an improvement of luminous efficiency is expected. For Mg activation in p-GaN under the tunnel junction is a big challenge, in this work, we carried out the sputtering growth of n-GaN capping layer on the tunnel junction/p-GaN/MQS/nanowire structures for the first time. Single crystalline n-GaN was successfully grown mainly on the tip of the nanostructures.

Conference Presentation

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Yukimi Jinno, Renji Okuda, Naoki Sone, Weifang Lu, Yoshiya Miyamoto, Kazuma Ito, Shiori Yamamura, Sae Katsuro, Nanami Nakayama, Satoshi Kamiyama, Tetsuya Takeuchi, and Motoaki Iwaya "Sputtering growth of n-GaN cap layer on core-shell GaInN/GaN multiquantum shell/nanowires", Proc. SPIE PC12001, Gallium Nitride Materials and Devices XVII, PC120011E (5 March 2022); https://doi.org/10.1117/12.2608187

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