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9 March 2022 III-nitride-based RGB microLEDs for AR/VR applications
Steve Denbaars, Matt Wong, Panpan Li, Hongjian Li, Jordan Smith, Ryan White, Jake Ewing, Pavel Shapturenka, Michael Gordon, Cheyenne Lynsky, James Speck, Shuji Nakamura
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Proceedings Volume PC12022, Light-Emitting Devices, Materials, and Applications XXVI; PC1202201 (2022) https://doi.org/10.1117/12.2611304
Event: SPIE OPTO, 2022, San Francisco, California, United States
Abstract
The developments of high performance InGaN based micro-light-emitting diodes (µLEDs) are discussed. Through novel epitaxial growth and processing, and transparent packaging we have achieved external quantum efficiencies as high as 58% EQE at 450nm for MmicroLEDs. The critical challenges of µLEDs, namely full-color scheme, decreasing pixel size and mass transfer technique, and their potential solutions are explored. Recently, we have demonstrated efficient microLEDs emitting in the blue to green at dimensions as small of 1 micron. Red InGaN based red MicroLEDs with efficiencies of 2.5% has also been fabricated.
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Steve Denbaars, Matt Wong, Panpan Li, Hongjian Li, Jordan Smith, Ryan White, Jake Ewing, Pavel Shapturenka, Michael Gordon, Cheyenne Lynsky, James Speck, and Shuji Nakamura "III-nitride-based RGB microLEDs for AR/VR applications", Proc. SPIE PC12022, Light-Emitting Devices, Materials, and Applications XXVI, PC1202201 (9 March 2022); https://doi.org/10.1117/12.2611304
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KEYWORDS
RGB color model
External quantum efficiency
Gallium nitride
Indium gallium nitride
Solid state lighting
Light emitting diodes
Nanostructures
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