Presentation
11 November 2022 Evaluation of LS printing and general understanding of imaging with DF low-n mask
Author Affiliations +
Abstract
One of the ways to push down resolution limits in EUV lithography is to use alternative masks. In this work, we study the performance of a low-n absorber dark field (DF) mask for L/S printing. Comparing to TaBN absorber mask, low-n DF mask brings contrast gain for dense L/S. Yet we observe large best focus shifts for isolated features. In this work we demonstrate how adding assist features can resolve this limitation.
Conference Presentation
© (2022) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Tatiana Kovalevich, Lieve Van Look, Joern-Holger Franke, and Vicky Philipsen "Evaluation of LS printing and general understanding of imaging with DF low-n mask", Proc. SPIE PC12292, International Conference on Extreme Ultraviolet Lithography 2022, PC122920M (11 November 2022); https://doi.org/10.1117/12.2644701
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KEYWORDS
Photomasks

SRAF

Printing

Extreme ultraviolet

Extreme ultraviolet lithography

Metals

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