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11 June 2024 Direct band-gap hexagonal Silicon-Germanium type-I quantum wells
R. Farina, V. T. van Lange, W. H. J. Peeters, Max C. van Hemert, M. M. Jansen, C. Wakelkamp, Erik P. A. M. Bakkers, Jos E. M. Haverkort
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Proceedings Volume PC12991, Nanophotonics X; PC1299114 (2024) https://doi.org/10.1117/12.3016717
Event: SPIE Photonics Europe, 2024, Strasbourg, France
Abstract
Hexagonal SiGe alloys offer a group IV direct bandgap for integrated photonics, addressing the limitations of traditional silicon-based electronics. We have synthesized coaxial nanowire shells comprising direct bandgap hex-Ge/SiGe and hex-SiGe/SiGe Quantum Wells (QWs) around a wurtzite GaAs core. Time-resolved photoluminescence measurements demonstrate a 1 nanosecond radiative lifetime, proving direct bandgap emission. Photoluminescence spectra show the QW emission in between the emission of the well and the barrier material, indicating type-I band alignment. Measurements as a function of QW thickness demonstrate clear quantum confinement with emission up to room temperature for thick QWs. By changing the QW-thickness and the well composition, the emission could be tuned between 2000-3400 nm. The experimentally observed direct bandgap SiGe QWs with type-I band alignment are expected to be pivotal for the development of novel low-dimensional devices based on hex-Ge and hex SiGe.
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R. Farina, V. T. van Lange, W. H. J. Peeters, Max C. van Hemert, M. M. Jansen, C. Wakelkamp, Erik P. A. M. Bakkers, and Jos E. M. Haverkort "Direct band-gap hexagonal Silicon-Germanium type-I quantum wells", Proc. SPIE PC12991, Nanophotonics X, PC1299114 (11 June 2024); https://doi.org/10.1117/12.3016717
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KEYWORDS
Quantum wells
Silicon
Alloys
Germanium
Photoluminescence
Quantum features
Quantum light sources
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