Theoretical Analysis Of Thermal And Mass Transport During Laser Annealing

R. F. Wood

doi:10.1117/12.958013

24 January 1980 Theoretical Analysis Of Thermal And Mass Transport During Laser Annealing

R. F. Wood

Proceedings Volume 0198, Laser Applications in Materials Processing; (1980) https://doi.org/10.1117/12.958013
Event: 23rd Annual Technical Symposium, 1979, San Diego, United States

Abstract

The radiation from high-power, Q-switched lasers has been used recently in semiconductor research to 1) anneal the lattice damage caused by ion implantation, 2) diffuse surface-deposited dopant films, 3) recrystallize doped amorphous films deposited on substrates, and 4) remove precipitates present after conventional high-temperature, long-time, dopant diffusion. All of these phenomena can be understood in terms of a model based on macroscopic diffusion equations for heat and mass transport, cast in a finite-difference form to allow for the temperature- and spatial-dependence of the thermal conductivity, absorption coefficient of the laser radiation, and other quantities. Results of calculations with the model show that the near-surface region of the sample melts and stays molten for a time of the order of 10-7 secs during which dopant diffusion in the liquid state can explain the major features of the experimental results. Detailed results for arsenic-implanted silicon show the importance of non-equilibrium segregation effects.

Citation Download Citation

R. F. Wood "Theoretical Analysis Of Thermal And Mass Transport During Laser Annealing", Proc. SPIE 0198, Laser Applications in Materials Processing, (24 January 1980); https://doi.org/10.1117/12.958013

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