Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure

Yoshihiro Miyamoto; Tohru Maekawa; Toshiro Yamamoto; Kunihiro Tanikawa; Hiroshi Takigawa; Reikichi Tsunoda; Toshio Kanno

doi:10.1117/12.933717

28 December 1982 Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure

Yoshihiro Miyamoto, Tohru Maekawa, Toshiro Yamamoto, Kunihiro Tanikawa, Hiroshi Takigawa, Reikichi Tsunoda, Toshio Kanno

Author Affiliations +

Proceedings Volume 0341, Real-Time Signal Processing V; (1982) https://doi.org/10.1117/12.933717
Event: 1982 Technical Symposium East, 1982, Arlington, United States

Abstract

This paper describes a new method of surface potential measurement for MIS infrared focal plane arrays. The key feature of this method is a charge sensitive amplifier which detects the surface potential directly. The surface potential is subject to photo-generated charge carriers stored in a potential well as well as the gate voltage. Therefore, this measurement can be used for both electronic and optical characterization of an MIS infrared imager such as an infrared charge coupled device (IRCCD) or an infrared charge injection device (IRCCD). Mercury cadmium telluride (HgCdTe) IRCIDs with 3 x 5 pixels were evaluated using this technique. The measurement was controlled by HP System 35 and proved more accurate, informative, and speedy than the conventional capacitance-voltage (C-V) measurement.

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Yoshihiro Miyamoto, Tohru Maekawa, Toshiro Yamamoto, Kunihiro Tanikawa, Hiroshi Takigawa, Reikichi Tsunoda, and Toshio Kanno "Evaluation Method For Infrared Focal Plane Arrays With Metal Insulator Semiconductor (MIS) Structure", Proc. SPIE 0341, Real-Time Signal Processing V, (28 December 1982); https://doi.org/10.1117/12.933717

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