Paper
9 August 1983 Laser-Based Studies Of Chemical Vapor Deposition
W. G. Breiland, M. E. Coltrin, Pauline Ho
Author Affiliations +
Proceedings Volume 0385, Laser Processing of Semiconductor Devices; (1983) https://doi.org/10.1117/12.934969
Event: 1983 Los Angeles Technical Symposium, 1983, Los Angeles, United States
Abstract
Pulsed laser-Raman spectroscopy and laser-excited fluorescence have been used to profile reactive species concentrations inside a chemical vapor deposition cell. Experimental data and theoretical calculations indicate that gas-phase chemical kinetics plays an important role in the deposition process.
© (1983) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
W. G. Breiland, M. E. Coltrin, and Pauline Ho "Laser-Based Studies Of Chemical Vapor Deposition", Proc. SPIE 0385, Laser Processing of Semiconductor Devices, (9 August 1983); https://doi.org/10.1117/12.934969
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Cited by 4 scholarly publications.
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KEYWORDS
Chemical vapor deposition

Raman spectroscopy

Luminescence

Chemistry

Laser spectroscopy

Helium

Nitrogen

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