Electronic And Chemical Structure Of Metal-Silicon Interfaces

P J Grunthaner; F J. Grunthaner

doi:10.1117/12.941343

31 May 1984 Electronic And Chemical Structure Of Metal-Silicon Interfaces

P J Grunthaner, F J. Grunthaner

Proceedings Volume 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials; (1984) https://doi.org/10.1117/12.941343
Event: 1984 Los Angeles Technical Symposium, 1984, Los Angeles, United States

Abstract

This paper reviews our current understanding of the near-noble metal silicides and the interfaces formed with Si(100). Using x-ray photoemission spectroscopy, we compare the chemical composition and electronic structure of the room temperature metal-silicon and reacted silicide-silicon interfaces. The relationship between the interfacial chemistry and the Schottky barrier heights for this class of metals on silicon is explored.

Citation Download Citation

P J Grunthaner and F J. Grunthaner "Electronic And Chemical Structure Of Metal-Silicon Interfaces", Proc. SPIE 0463, Advanced Semiconductor Processing/Characterization of Electronic/Optical Materials, (31 May 1984); https://doi.org/10.1117/12.941343

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