Laser Induced Phase Transition Of Several Semiconductor Compounds

Gan Fuxi; Wang Hao

doi:10.1117/12.946431

12 April 1985 Laser Induced Phase Transition Of Several Semiconductor Compounds

Gan Fuxi, Wang Hao

Proceedings Volume 0529, Optical Mass Data Storage I; (1985) https://doi.org/10.1117/12.946431
Event: 1985 Los Angeles Technical Symposium, 1985, Los Angeles, United States

Abstract

In recent years, we have systematically studied amorphous layer formation of III-V semi-conductor compounds irradiated by pulsed laser light. In this paper the study on the phase transition of semiconductor compounds and multicomponent alloys was reported. The optical properties of materials during phase transition were measured. The surface morphology,transition temperature and laser threshold power were also determined. A dynamic model for surface cooling and phase transition was proposed. The stability of amorphous layer were investigated in detail. The possibility of using these materials for reversible optical disc was discussed.

Citation Download Citation

Gan Fuxi and Wang Hao "Laser Induced Phase Transition Of Several Semiconductor Compounds", Proc. SPIE 0529, Optical Mass Data Storage I, (12 April 1985); https://doi.org/10.1117/12.946431

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