The Density Of States In Hydrogenated Amorphous Silicon

R. A. Street

doi:10.1117/12.940153

21 August 1987 The Density Of States In Hydrogenated Amorphous Silicon

R. A. Street

Proceedings Volume 0763, Physics of Amorphous Semiconductor Devices; (1987) https://doi.org/10.1117/12.940153
Event: OE LASE'87 and EO Imaging Symposium, 1987, Los Angeles, CA, United States

Abstract

This paper reviews various experiments that give information about the density of states in hydrogenated amorphous silicon (a-Si:H). The data are used to construct the density of states distribution N(E), and its dependence on doping. The structural origin of the different groups of states is discussed, and it is also shown that N(E) depends on the thermal history of the samples.

Citation Download Citation

R. A. Street "The Density Of States In Hydrogenated Amorphous Silicon", Proc. SPIE 0763, Physics of Amorphous Semiconductor Devices, (21 August 1987); https://doi.org/10.1117/12.940153

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