A Second Generation Focused Ion Beam Micromachining System

L. R. Harriott

doi:10.1117/12.940370

30 June 1987 A Second Generation Focused Ion Beam Micromachining System

L. R. Harriott

Proceedings Volume 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI; (1987) https://doi.org/10.1117/12.940370
Event: Microlithography Conferences, 1987, Santa Clara, CA, United States

Abstract

We present a description of our second generation micromachining system. This machine has been developed at AT&T Bell Laboratories for applications including photomask repair, integrated circuit modification, and fabrication of integrated optical structures. The architecture incorporates many of the features and capabilities found separately in other systems, in a unique combination with emphasis on flexibility and ease of operation. The hardware features a 30 KeV Gallium beam with a one millimeter deflection field and 250 mm by 300 mm stage travel. Provisions have been made for secondary electron and ion imaging, charge neutralization, gas phase material deposition and secondary ion mass spectroscopy (SIMS).

Citation Download Citation

L. R. Harriott "A Second Generation Focused Ion Beam Micromachining System", Proc. SPIE 0773, Electron-Beam, X-Ray, and Ion-Beam Lithographies VI, (30 June 1987); https://doi.org/10.1117/12.940370

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