A Contrast Enhanced Reflectionless Process (CER)

J. Ch. Guibert; M. Chevallier

doi:10.1117/12.975612

17 September 1987 A Contrast Enhanced Reflectionless Process (CER)

J. Ch. Guibert, M. Chevallier

Proceedings Volume 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection; (1987) https://doi.org/10.1117/12.975612
Event: Fourth International Symposium on Optical and Optoelectronic Applied Sciences and Engineering, 1987, The Hague, Netherlands

Abstract

A new multilayer resist system for lithography has been developed for VLSI production with submicron geometries. Antireflective coating is used in combination with a novolac resist and a Contrast Enhancement Material. The characteristics of this system, along with its advantages, disadvantages and results are discussed for its use over critical levels.

Citation Download Citation

J. Ch. Guibert and M. Chevallier "A Contrast Enhanced Reflectionless Process (CER)", Proc. SPIE 0811, Optical Microlithographic Technology for Integrated Circuit Fabrication and Inspection, (17 September 1987); https://doi.org/10.1117/12.975612

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